BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR10CM

Abstract: BCR10CM-12 BCR10CM-8L BCR10CM8L circuit BCR10CM BCR10CM-12L BCR10CM-8 T-46 T-47 T-48
Contextual Info: BCR10CM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Triac 10 Amperes/400-600 Volts OUTLINE DRAWING C A E L D ➃ H лG F Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an

fan motor triac control

Abstract: BCR10CS-12LA PRSS0004AB-A
Contextual Info: BCR10CS-12LA Triac Medium Power Use REJ03G0339-0300 Rev.3.00 Nov 30, 2007 Features • IT RMS : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AB-A

BCR10EM-10

Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4
Contextual Info: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR10CS

Abstract: mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING 4 Dimensions in mm 10.5 MAX ∗ 1.3 VOLTAGE CLASS +0.3 0 –0 1.5 3.0 –0.5 +0.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME 4.5 1.5 MAX BCR10CS

Contextual Info: Preliminary Datasheet BCR10LM-12LB Triac R07DS0064EJ0100 Rev.1.00 Jul 27, 2010 Medium Power Use Features •     The Product guaranteed maximum junction temperature 150C  Insulated Type  Planar Type  UL Recognized : File No. E223904

Contextual Info: Preliminary Datasheet BCR10LM-12LD Triac R07DS0066EJ0100 Rev.1.00 Jul 27, 2010 Medium Power Use Features •     The product guaranteed maximum junction temperature 150C.  Insulated Type  Planar Type  UL Recognized : File No. E223904

BCR10PM

Abstract: E80276 400v 15A triac mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR TRIAC BCR10PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE O U T LIN E DR A W IN G Dimensions in mm 1 0 .5 M A X Is M easurem ent point of IT (RMS) .10A

BCR10CS-12LB

Contextual Info: Preliminary Datasheet BCR10CS-12LB R07DS0224EJ0400 Previous: REJ03G0469-0300 Rev.4.00 Dec 14, 2010 Triac Medium Power Use Features • IT (RMS) : 10 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6  The product guaranteed maximum junction

Contextual Info: BCR10CM-12LA Triac Medium Power Use REJ03G0296-0300 Rev.3.00 Nov 30, 2007 Features • Non-Insulated Type • Planar Passivation Type • IT RMS : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline RENESAS Package code: PRSS0004AA-A

BCR10CM

Abstract: mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR TRIAC BCR10CM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR10CM OUTLINE DRAWING D im ensions in mm 10.5 MAX 4.5 LU U LU * © • IT (RMS) . 10A

BCR10

Abstract: BCR10PM E80276 400v 15A triac mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR10PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME φ3.2±0.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT RMS . 10A

PRSS0003AA-A

Abstract: IT2101
Contextual Info: Preliminary Datasheet BCR10PM-12LD R07DS0147EJ0200 Previous: REJ03G1561-0100 Rev.2.00 Sep 17, 2010 Triac Medium Power Use Features •     The product guaranteed maximum junction temperature 150C.  Insulated Type  Planar Type  UL Recognized: Yellow Card No. E223904

BCR10CS-12LB

Contextual Info: BCR10CS-12LB Triac Medium Power Use The product guaranteed maximum junction temperature of 150°C REJ03G0469-0300 Rev.3.00 Nov 30, 2007 Features • Non-Insulated Type • Planar Passivation Type • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6

BCR10PM-12LB

Abstract: BCR10PM-12LB-A8 PRSS0003AA-A
Contextual Info: Preliminary Datasheet BCR10PM-12LB Triac R07DS0105EJ0300 Previous: REJ03G0462-0200 Medium Power Use Rev.3.00 (The product guaranteed maximum junction temperature of 150C) Sep 13, 2010 Features •     Insulated Type  Planar Passivation Type

BCR10KM-12LC

Abstract: BCR10KM-12LC-A8
Contextual Info: BCR10KM-12LC Triac Medium Power Use REJ03G0323-0200 Rev.2.00 Dec.17.2004 Features • • • • • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type IT RMS : 10 A VDRM : 600 V IFGTI , IRGTI, IRGT : 50 mA

Contextual Info: BCR10PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R 1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation

Contextual Info: BCR101. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 100kΩ , R2 = 100kΩ BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F*

triac zd 103

Abstract: BCR10CS BCR10CS-12L BCR10CS-12LA BCR10CS-12LB BCR10CS-12LB-T11
Contextual Info: BCR10CS-12L Triac Medium Power Use REJ03G0339-0100 Rev.1.00 Aug.20.2004 Features • IT RMS : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGTⅢ : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline TO-220S 4 1 2, 4 3 2 1. 2. 3. 4.

Contextual Info: MITSUBISHI SEMICONDUCTOR TRIAC BCR10UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING BCR10UM D im e n s io n s in m m 10.2 LO to <j)3.8 ± 0 ,2 TYPE NAME SoD VO LTAG E CLASS s T Q fflP 1 2 .5 4 2 .5 4 © © 0 .6 2 .6 ± 0 . 4

E6327

Abstract: BCR101 BCR101F BCR101L3 BCR101T BCR108T SC75
Contextual Info: BCR101. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 100kΩ , R2 = 100kΩ BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F*

TO-220F JEDEC

Abstract: BCR10PM-12L BCR10PM-12LA
Contextual Info: BCR10PM-12L Triac Medium Power Use REJ03G0304-0200 Rev.2.00 Nov.09.2004 Features • • • • • Insulated Type • Planar Passivation Type • UL Recognised : Yellow Card No. E223904 File No. E80271 IT RMS : 10 A VDRM : 600 V IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5

BCR10UM

Abstract: mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING 2.8 ± 0.2 BCR10UM 10.2 4.5 15.5 1.27 ✽ φ3.8 ± 0.2 1.4 4.2 MAX 13.0 MIN TYPE NAME VOLTAGE CLASS Dimensions in mm 0.8 2.54 2.54 2.6 ± 0.4