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    marking Z1

    Abstract: BCR847BF
    Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD5V3U2U-03F ESD5V3U2U-03LRH marking Z1 BCR847BF

    BCR108W

    Abstract: BCR142 BCR142F BCR142W BCW66
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR142/W BCR142F C 3 R1 R2


    Original     		PDF BCR142. BCR142/W BCR142F EHA07184 BCR142 BCR142W OT323 BCR108W BCR142 BCR142F BCR142W BCW66

    marking code MS SOT323

    Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860

    BCR135

    Abstract: BCR108W BCR135F BCR135S BCR135W BCW66
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		PDF BCR135. BCR135S: BCR135/F BCR135W BCR135S EHA07184 EHA07174 BCR135 BCR135F BCR135 BCR108W BCR135F BCR135S BCR135W BCW66

    BCR108W

    Abstract: BCR192 BCR192F BCR192W BCW66
    Text: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR192/F/W C 3 R1 R2


    Original     		PDF BCR192. BCR192/F/W EHA07183 BCR192 BCR192F BCR192W OT323 BCR108W BCR192 BCR192F BCR192W BCW66

    BCR847BF

    Abstract: BCR179 BCR179F
    Text: BCR179. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit. • Built in bias resistor R1 = 10 kΩ • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR179F C 3 R1 1 2 B E EHA07180


    Original     		PDF BCR179. BCR179F EHA07180 BCR847BF BCR179 BCR179F

    Untitled

    Abstract: No abstract text available
    Text: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see


    Original     		PDF BCR119. BCR119S: BCR119/F/W BCR119S EHA07264 EHA07265 BCR119 BCR119F

    Untitled

    Abstract: No abstract text available
    Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD5V3U2U-03F ESD5V3U2U-03Ls

    Untitled

    Abstract: No abstract text available
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		PDF BCR135. BCR135S: BCR135/F BCR135W BCR135S EHA07184 EHA07174 BCR135 BCR135F

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks

    Untitled

    Abstract: No abstract text available
    Text: BFR340F NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR340F

    Untitled

    Abstract: No abstract text available
    Text: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ , R2 = 22 kΩ BCR191/F/L3 BCR191T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR191 WOs


    Original     		PDF BCR191. BCR191/F/L3 BCR191T/W EHA07183 BCR191 BCR191F BCR191L3 BCR191T BCR191W OT323

    Untitled

    Abstract: No abstract text available
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		PDF BCR135. BCR135S: BCR135/F/L3 BCR135T/W BCR135S EHA07184 EHA07174 BCR135 BCR135F

    Untitled

    Abstract: No abstract text available
    Text: BC857BF.BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF NPN


    Original     		PDF BC857BF. BC860BF BC847BF, BC848BF BC849BF, BC850BF BC857BF BC858BF BC859BF

    Untitled

    Abstract: No abstract text available
    Text: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*


    Original     		PDF BCR164. BCR164F/L3 BCR164T EHA07183 BCR164F* BCR164L3* BCR164T* dissipationBCR164F, BCR164L3, BCR164T,

    bfr949

    Abstract: BFR949F
    Text: BFR949F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA 1 • fT = 9 GHz, F = 1 dB at 1 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR949F 50mponents bfr949 BFR949F

    ua 722 fc

    Abstract: BCR847BF MARKING rks BFR94
    Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA  fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR949F ua 722 fc BCR847BF MARKING rks BFR94

    BFR360F

    Abstract: AN077
    Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFR360F BFR360F AN077

    BFR340F

    Abstract: AN077 BFR340F TSFP-3
    Text: BFR340F NPN Silicon RF Transistor • General purpose Low Noise Amplifier • Ideal for low current operation 2 3 1 • High breakdown voltage enables operation in automotive applications • Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz • Small package 1,2 x 1,2 mm 2 with visible leads


    Original     		PDF BFR340F BFR340F AN077 BFR340F TSFP-3

    BCR108W

    Abstract: BCR129 BCR129F BCR129S BCR129W BCW66
    Text: BCR129. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10 kΩ • BCR129S: Two internally isolated transistors with good matching in one multichip package • BCR129S: For orientation in reel see


    Original     		PDF BCR129. BCR129S: BCR129/F BCR129W BCR129S EHA07264 EHA07265 BCR129 BCR129F BCR108W BCR129 BCR129F BCR129S BCR129W BCW66

    E6327

    Abstract: BCR101 BCR101F BCR101L3 BCR101T BCR108T SC75
    Text: BCR101. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 100kΩ , R2 = 100kΩ BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F*


    Original     		PDF BCR101. BCR101F/L3 BCR101T EHA07184 BCR101F* BCR101L3* BCR101T* E6327 BCR101 BCR101F BCR101L3 BCR101T BCR108T SC75

    DIN 6784 c1

    Abstract: DIN 6784 E6327 BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W infineon marking code B2 SOT23
    Text: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR192. BCR192/F/L3 BCR192T/W BCR192U EHA07173 EHA07183 BCR192 BCR192F BCR192L3 BCR192T DIN 6784 c1 DIN 6784 E6327 BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W infineon marking code B2 SOT23

    BCR108T

    Abstract: BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75
    Text: BCR196. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 22kΩ BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR196 WXs 1=B


    Original     		PDF BCR196. BCR196/F/L3 BCR196T/W EHA07183 BCR196 BCR196F BCR196L3 BCR196T BCR196W OT323 BCR108T BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75

    BCR198W

    Abstract: BCR198 BCR198F BCR198L3 BCR198S BCR198T SCD80
    Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR198. BCR198S: BCR198/F/L3 BCR198T/W BCR198S EHA07183 EHA07173 BCR198 BCR198F BCR198W BCR198 BCR198F BCR198L3 BCR198S BCR198T SCD80