BCW65A
Abstract: BCW65B BCW65BR BCW66H BCW65 BCW65C BCW65CR BCW66F BCW66FR BCW66G
Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING 1995 DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - 5V BCW65C - EC BCW65CR - 6V 7P BCW65A - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M TYPES BCW65 -
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BCW65
BCW66
BCW65A13
BCW65B
BCW65BR
BCW65CR
BCW65C
BCW65A
BCW66F
BCW66FR
BCW66H
BCW65
BCW66G
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BCW65 ec
Abstract: BCW66H BCW65AR
Text: Not Recommended for New Design Please Use BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA
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BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
BCW65
BCW67
BCW66
BCW68
BCW65 ec
BCW66H
BCW65AR
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Untitled
Abstract: No abstract text available
Text: BCW65 SERIES BCW66 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for
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BCW65
BCW66
OT-23
IC-65
BCW65A
BCW66F
BCW65B
BCW66G
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1 +0.1
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BCW65
BCW66
OT-23
BCW65
100ge
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BCW66
Abstract: EFs SOT-23 BCW65 egs SOT23
Text: Transistors IC SMD Type NPN General Purpose Transistors BCW65,BCW66 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High current gain. 0.4 3 For general AF applications. 2 +0.1 0.95-0.1
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BCW65
BCW66
OT-23
BCW65
BCW66
EFs SOT-23
egs SOT23
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BCW66
Abstract: transistor EH sot-23 BCW65 BCW65A BCW65B BCW66F BCW67 BCW68 ferranti BCW66H
Text: * FERRANTI semiconductors BCW65 BCW66 NPN Sil icon Planar Medium Power Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW67 and BCW68. Encapsulated in the popular SOT-23 package these devices
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BCW65
BCW66
BCW67
BCW68.
OT-23
BCW66
BCW65/66,
BCW65/66
transistor EH sot-23
BCW65A
BCW65B
BCW66F
BCW68
ferranti
BCW66H
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pac 007a
Abstract: No abstract text available
Text: rS Z S G S -T H O M S O N Ä T # M iS B m iC T l « ! BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type M arking BCW 65A EA BCW 65B EB BCW 65C EC BCW 66F EF BCW 66G EG BCW 66H EH . SILICO N EPITAXIAL PLANAR NPN T R A N SIST O R S . MINIATURE PLASTIC PAC KAG E FO R
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BCW65
BCW66
BCW67
BCW68
OT-23
SC06960
BCW65/BCW66
OT-23
7TSTE37
pac 007a
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transistor C458
Abstract: NPN C458 c458 NPN transistor TRANSISTOR C460 transistor C461 c458 transistor transistors c458 c460 transistor C458 C459
Text: BCW 65, BCW66 NPN Transistors for AF driver stages and switching applications B C W 65 and B C W 66 are epitaxial NPN silicon planar transistors in a plastic package 23 A 3 DIN 41 869 SOT-23 for use in driver stages and switching as well as universal applications. They are particularly suitable for thick and thin film circuits. Both types
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BCW66
OT-23)
Q62702
Q62702-
Q62702
transistor C458
NPN C458
c458 NPN transistor
TRANSISTOR C460
transistor C461
c458 transistor
transistors c458
c460 transistor
C458
C459
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BCW66
Abstract: No abstract text available
Text: SIEMENS NPN Silicon AF Transistors • • • • BCW 65 BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 67, BCW 68 PNP Type Marking Ordering Code (tape and reel) PinC onfiguration 2
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Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
OT-23
BCW65
BCW66
EHP00590
BCW66
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Untitled
Abstract: No abstract text available
Text: T - w NPN Silicon AF Transistors 32E D SIEMENS/ • 023b32Q SPCLi Q G lb b ^ 1 - n IS I P BCW 65 BCW 66 SE MI CONDS For general A F applications High current gain Low collector-emitter saturation voltage Complementary types: B C W 67, B C W 68 PNP Type Marking
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023b32Q
BCW65
23b320
BCW66
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2N2222
Abstract: 6C556 BCw610
Text: SMDTransistors SOT-23 Case 350mW Proelectron Series— Confd TYPE NO. BC8586 DESCRIPTION PNP LOW NOISE v n o VOLTS BV ceo (VOLTS) BVebo (VOLTS) MW MM MM m MAX 30 30 50 15 fCBO (^ ci (VOLTS) ftpE « MM MAX 30 220 475 V« (VOLTS) Vc í (SA T)« (mA> (VOUS)
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OT-23
350mW
BC8586
BC858C
BC859
BC85SA
BC859B
BC859C
8C860
8C860A
2N2222
6C556
BCw610
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1ff TRANSISTOR SMD MARKING CODE
Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369
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DDDQS11
OT-23
350mW
CMPT918
CMPT2222A
CMPT2369
CMPT2484
CMPT2907A
CMPT3640
CMPT3904
1ff TRANSISTOR SMD MARKING CODE
smd transistor 5c sot-23
NB ad smd transistor
SMD TRANSISTOR MARKING 6C
SMD TRANSISTOR MARKING 5c npn
smd dual diode marking code AH sot-23
BC548 TRANSISTOR SMD
smd diode ZENER marking code BC
marking code diode C1J SMD
SMD TRANSISTOR MARKING c1p
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