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    BD 536 Search Results

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    BD 536 Price and Stock

    ROHM Semiconductor BD5360G-TR

    IC SUPERVISOR 1 CHANNEL 5SSOP
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    DigiKey BD5360G-TR Cut Tape 5,737 1
    • 1 $0.95
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    BD5360G-TR Digi-Reel 5,737 1
    • 1 $0.95
    • 10 $0.576
    • 100 $0.3653
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    BD5360G-TR Reel 3,000 3,000
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    Avnet Americas BD5360G-TR Reel 3,000
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    Mouser Electronics BD5360G-TR 3,379
    • 1 $0.68
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    Verical BD5360G-TR 2,900 596
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    BD5360G-TR 50 29
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    • 100 $0.545
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    Quest Components BD5360G-TR 2,320
    • 1 $0.84
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    • 1000 $0.252
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    Chip1Stop BD5360G-TR Cut Tape 50
    • 1 -
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    • 100 $0.43
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    CoreStaff Co Ltd BD5360G-TR 2,900
    • 1 $0.09
    • 10 $0.088
    • 100 $0.084
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    STMicroelectronics BD536

    TRANS PNP 60V 8A TO220
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    DigiKey BD536 Tube
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    onsemi BD536J

    TRANS PNP 60V 8A TO220-3
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    DigiKey BD536J Bulk 1,200
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    SEI Stackpole Electronics Inc RNF14FBD536K

    RES 536K OHM 1% 1/4W AXIAL
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    DigiKey RNF14FBD536K Bulk 1,000
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    Avnet Americas RNF14FBD536K Bulk 17 Weeks 1,000
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    NAC RNF14FBD536K 1,000
    • 1 -
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    • 1000 $0.052
    • 10000 $0.044
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    SEI Stackpole Electronics Inc RNF18FBD536K

    RES 536K OHM 1% 1/8W AXIAL
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    DigiKey RNF18FBD536K Bulk 1,000
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    Avnet Americas RNF18FBD536K Bulk 17 Weeks 1,000
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    NAC RNF18FBD536K 1,000
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    • 10000 $0.043
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    Find more BD 536 price and stock on Findchips.com

    BD 536 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD536 Continental Device India NPN/PNP Plastic Power Transistors, Medium Power Linear and Switching Applications Original PDF
    BD536 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    BD536 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
    BD536 STMicroelectronics Complementary power transistors Original PDF
    BD536 Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan PDF
    BD536 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
    BD536 General Electric Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. Scan PDF
    BD536 Motorola European Master Selection Guide 1986 Scan PDF
    BD536 Motorola complementary silicon PNP plastic power transistor. 60 V, 4 A, 50 W. Scan PDF
    BD536 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD536 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD536 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD536 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD536 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    BD536 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD536 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD536 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD536 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD536 Unknown Transistor Replacements Scan PDF
    BD536 Unknown Cross Reference Datasheet Scan PDF

    BD 536 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NT5TU32M16DG

    Abstract: Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667
    Text: NT5TU128M4CE / NT5TU64M8CE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -25D/-25DI -25C/-25CI -BD -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6 5-5-5 7-7-7 6-6-6 tCK Avg. 266 333 400 400


    Original     		PDF NT5TU128M4CE NT5TU64M8CE NT5TU32M16DG 512Mb -37B/-37BI -25D/-25DI -25C/-25CI DDR2-533 DDR2-667 DDR2-800 NT5TU32M16DG Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667

    chn 537

    Abstract: chn 638 CHN 536 chn 538 chn 53 b CHN 65 CHN 647 e8 gg 65vl BD 761
    Text: \[]{},|,3/ =:761 =>.>2 <27.B 3GDRSPGQ X 9555V ^c_f_]nlc] mnl_hanb X Pbini cmif[ncih X Cocfn2ch mho\\_l Gcf_ Ni? F6889=6 X TRJBD BD ionjon X P[h_f giohn X ED il BD ]ihnlif DQD57556556>8; X Wcnb LFE ch^c][nil il hin 4292<.7 12=0<6;>6:9 Tb_ KHX26:5:GC i``_l 8287VED il >527=5VBD chjon ]ihnlif1qcnb


    Original     		PDF F6889 DQD57556556 KHX26 8287VED 95Bgjm3Bff 9555Vlgm 39ggX9 E2YB65Y E2YB75Y E2YB95Y chn 537 chn 638 CHN 536 chn 538 chn 53 b CHN 65 CHN 647 e8 gg 65vl BD 761

    OHL02514

    Abstract: No abstract text available
    Text: BD Biosciences SJ, Confidential CO HISTORY 01 - CO # DATE 500000000950 - 03/12/12 - CHANGE CODES a CO CHANGE CODES OPERATIONAL SPECIFICATIONS: The operational characteristics of this device shall be in accordance with the applicable manufacturers published


    Original     		PDF D-93055 OHL02514

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 BD906, 908, 910, 912 TO-220 Plastic Package Power Linear and Switching Applications


    Original     		PDF BD906, O-220 C-120 Rev170701

    NT5TU32M16DG

    Abstract: NT5TU32M16 Nanya NT5TU32M16DG RU 3C
    Text: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5TU64M8DE NT5TU32M16DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) NT5TU32M16DG NT5TU32M16 Nanya NT5TU32M16DG RU 3C

    N2TU51216

    Abstract: N2TU51280DE-BE
    Text: N2TU51280DE / N2TU51216DG Preliminary 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C -AC -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF N2TU51280DE N2TU51216DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) N2TU51216 N2TU51280DE-BE

    nt5tu32m16dg

    Abstract: NT5TU32M16DG-AC Nanya NT5TU32M16DG NT5TU32M16DG-BE NT5TU64M8DE NT5TU32M16DG-ACI NT5TU32M16DG-3C NT5TU64M8 NT5TU32M16DG AC NT5TU32M16DG-BD
    Text: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5TU64M8DE NT5TU32M16DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6) x8/1066 nt5tu32m16dg NT5TU32M16DG-AC Nanya NT5TU32M16DG NT5TU32M16DG-BE NT5TU32M16DG-ACI NT5TU32M16DG-3C NT5TU64M8 NT5TU32M16DG AC NT5TU32M16DG-BD

    Untitled

    Abstract: No abstract text available
    Text: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI -AC/ACI -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency 125


    Original     		PDF NT5TU64M8DE NT5TU32M16DG 512Mb DDR2-667-CL5) DDR2-800-CL5) DDR2-1066-CL7) DDR2-1066-CL6)

    bd 909 e 910

    Abstract: 907 pnp CD 910 BD905 BD906
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF BD906, O-220 C-120 Rev170701 bd 909 e 910 907 pnp CD 910 BD905 BD906

    transistor bd 292

    Abstract: cdil bd 140 BD240C
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier


    Original     		PDF O-220 25deg C-120 transistor bd 292 cdil bd 140 BD240C

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906, 908, 910, 912 PNP TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF BD906, O-220 C-120 Rev170701

    transistor bd 292

    Abstract: BD240C 20mH 1A power transistor bd
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers


    Original     		PDF O-220 25deg C-120 transistor bd 292 BD240C 20mH 1A power transistor bd

    BD NPN transistors

    Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
    Text: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710


    OCR Scan     		PDF O-126 BD NPN transistors BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


    OCR Scan     		PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    bd 825 10

    Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
    Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,


    OCR Scan     		PDF Q62702-D1135 Q62702-D149 Q62702-D1213 Q62702-D60 Q62702-D1305 Q62702-D1306 Q62702-D1113 Q62702-D1309 Q62702-D1310 Q62702-D1311 bd 825 10 SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 BD829 D1113

    bd 241a transistor

    Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
    Text: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A


    OCR Scan     		PDF T0-220B O-220B -220B to-02 melf-002. bd 241a transistor BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11

    BD 139 N

    Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
    Text: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50


    OCR Scan     		PDF OT-32 BD 139 N TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436

    Untitled

    Abstract: No abstract text available
    Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD536 - 60 V : BD538


    OCR Scan     		PDF BD534/536/538 BD533, BD537 BD536 BD538 BD534

    TRANSISTOR 536

    Abstract: 536 transistor BD538 TRANSISTOR BD538 BD536 BD534 BD533 BD535 BD537 IC-101 FAIRCHILD
    Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit -4 5 V : BD536 - 60 V : BD538


    OCR Scan     		PDF BD534/536/538 BD533, BD535 BD537 BD534 BD536 BD538 TRANSISTOR 536 536 transistor BD538 TRANSISTOR BD538 BD536 BD533 IC-101 FAIRCHILD

    BD533

    Abstract: BD537 TRANSISTOR BD533 BD534 BD535 BD536 BD538 101b1 60V transistor npn 2a switching applications
    Text: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD535 60 V : BD537


    OCR Scan     		PDF BD533/535/537 BD534, BD536 BD538 BD533 BD535 BD537 BD537 TRANSISTOR BD533 BD534 BD535 101b1 60V transistor npn 2a switching applications

    TRANSISTOR BD533

    Abstract: BD533 BD534 BD535 BD536 BD537 BD538 60V transistor npn 2a 60V transistor npn 2a switching applications
    Text: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD535 60 V : BD537


    OCR Scan     		PDF BD533/535/537 BD534, BD536 BD538 BD533 BD535 BD537 TRANSISTOR BD533 BD534 BD535 BD537 60V transistor npn 2a 60V transistor npn 2a switching applications

    BD370

    Abstract: No abstract text available
    Text: 8 7 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. REVISIONS DIST 37 BD LTR DESCRIPTION RLSE -1 PER NPR 5361 WAS 95-5018-10-1 DATE DUN APVD 06-30-95 DB MM HOUSING: POLYESTER, BLACK.


    OCR Scan     		PDF 54jjm oe-ao-95 09MAV94 27-JUN-95 amp34993 /home/saQ2Ga/dept4023/amp34993/edinmod BD370

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC BD ALL RIGHTS RESERVED. DIST REVISIONS 77 LTR -16.31 [. 642] DATE RLSE -1 NPR 5366, WAS 95-7343-8-1 06 / 27/95 REV PER EC 0G40-226-98 17 JUN 98 DUN APVD PB RT


    OCR Scan     		PDF 0G40-226-98 MIL-C-50. QQ-Z-363B. QQ-B-750. MIL-G-45204; QQ-N-290; MIL-T-10727; HD-22 e/55rv026d/dsk04/dept4023/amp11676/edmmod

    BD370

    Abstract: No abstract text available
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. BD DIST 37 R EV IS IO N S P LTR A B DATE DWN APVD 06 /2 3/95 - - 04 MAR 96 BC MB MM MM DESCRIPTION RLSE -1 PER NPR 5364 WAS 95-5018-1 1 -1


    OCR Scan     		PDF OS/23/95 S-2S-95 0a30J 09MAY94 14-MAY-9G amp34723 e/ssrv026d/dsk01/dept4023/amp34723/edmmod BD370