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    BD RR TRANSISTOR Search Results

    BD RR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD RR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E15NA100

    Abstract: STE15NA100 BD 149 transistor data transistor BD 378 IT110
    Text: STE15NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST E15NA100 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 0.77 Ω 15 A TYPICAL RDS(on) = 0.65 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STE15NA100 E15NA100 E15NA100 STE15NA100 BD 149 transistor data transistor BD 378 IT110

    Untitled

    Abstract: No abstract text available
    Text: BDW24/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 23, BD W 23A, BD W 23B and BD W 23C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollecto r E m itter V oltage : BD W 24


    OCR Scan     		PDF BDW24/A/B/C

    Untitled

    Abstract: No abstract text available
    Text: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD W 23A 60


    OCR Scan     		PDF BDW23/A/B/C

    transistor BD 140

    Abstract: BD 140 transistor BD442 b0442 BD440 b0440 BD439 BD441 bd 140
    Text: BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C o m p le m e n t to B D 4 3 9 , BD 441 re s p e c tiv e ly ABSOLUTE MAXIMUM RATINGS C h a r a c te r is t ic C o lle c to r B a s e V o lta g e C o lle c to r E m itte r V o lta g e


    OCR Scan     		PDF BD440/442 BD439, BD441 transistor BD 140 BD 140 transistor BD442 b0442 BD440 b0440 BD439 bd 140

    TRANSISTOR 536

    Abstract: transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538
    Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO -220 • Complement to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B ase V o lta g e Symbol


    OCR Scan     		PDF BD534/536/538 BD533, BD535 BD537 BD534 BD536 BD538 300/iS. TRANSISTOR 536 transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538

    Untitled

    Abstract: No abstract text available
    Text: RN1112,RN1113 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1112, RN1113 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 0.8 ± 0.1 With Built-in Bias Resistors


    OCR Scan     		PDF RN1112 RN1113 RN1112, RN2112, RN2113

    2N5760

    Abstract: HEP transistors 2N5758 2N5759 BUY69 hep silicon diode TIP5 TLP545 BU108 TIP545
    Text: TYPES 2N5758, 2N5759, 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATION S RECOMMENDED FOR CO M PLEM EN TARY USE WITH T1P544, TIP545, TIP546 • 150 W at 25°C Case Temperature • 6-A Rated Continuous Collector Current


    OCR Scan     		PDF 2N5758, 2N5759, 2N5760 TIP544, TIP545, TIP546 2N5758 2N5759 2N5760 HEP transistors BUY69 hep silicon diode TIP5 TLP545 BU108 TIP545

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055

    TRANSISTOR 536

    Abstract: 536 transistor BD538 TRANSISTOR BD538 BD536 BD534 BD533 BD535 BD537 IC-101 FAIRCHILD
    Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit -4 5 V : BD536 - 60 V : BD538


    OCR Scan     		PDF BD534/536/538 BD533, BD535 BD537 BD534 BD536 BD538 TRANSISTOR 536 536 transistor BD538 TRANSISTOR BD538 BD536 BD533 IC-101 FAIRCHILD

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN2114~RN2118 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2114, RN2115, RN2116, RN2117, RN2118 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm • With Built-in Bias Resistors • Sim plify Circuit Design


    OCR Scan     		PDF RN2114 RN2118 RN2114, RN2115, RN2116, RN2117, RN2114 RN2116 RN2117

    BD375

    Abstract: BD376 BD377 BD378 BD379 BD380
    Text: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD375, BD 377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit - 50 V - 75 V - 100 V - 45 V : BD378 - 60 V


    OCR Scan     		PDF BD376/378/380 BD375, BD377 BD379 BD376 BD378 BD380 BD375 BD378 BD380

    BD944

    Abstract: BD946 BD943 BD948 LE17
    Text: S e m e la b p ic SEME Coventry Road. Lutterworth Leicestershire LE17 4JB. England Sales telephone: 0455 556565 AQAP-1 Licence No 2M8S02 ^ Licence No. M/103&#39;CECC/UK ESA Admin telephone: 0455 552505 Telex: 341927 SMLLUT G Fax: 0455 552612 Approval Pen<5ing


    OCR Scan     		PDF 2M8S02 BD943; BD944 BD946 BD948 -VC80 BD944 BD946 BD943 BD948 LE17

    BD377

    Abstract: BD375 BD379 BD376 BD378 BD380 BD-375 transistor 377
    Text: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD376, BD 378 and BD380 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage C ollector E m itter Voltage Symbol BD375


    OCR Scan     		PDF BD375/377/379 BD376, BD378 BD380 BD375 BD377 BD379 BD377 BD379 BD376 BD-375 transistor 377

    BD 669

    Abstract: KD 239C
    Text: File Number BD239, BD239A, BD239B, BD239C 669 Epitaxial-Base Silicon N-P-N VERSAWATT Transistors For P o w e r-A m p lif ier and H igh-Speed-Sw itching A p p lic a tio n s Features: • 30 W at 25 °C case temperature ■ 4-A rated collector current ■ Min. f T o f 3 M H z at 10 V , 200 mA


    OCR Scan     		PDF BD239, BD239A, BD239B, BD239C D240A, BD240B, BD240C BD239C BD239-series BD 669 KD 239C

    TIP34

    Abstract: TIP34C equivalent TIP33C TIP34A texas instruments tip34 TIP33 TIP33A TIP33B TIP34B TIP34C
    Text: TYPES TIP34, TIP34A, TIP34B, TIP34C P-N-IP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR P O W E R -A M P LIF IE R A N D H IG H -SP EE D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP33, TIP33A, TIP33B, TIP33C


    OCR Scan     		PDF TIP34, TIP34A, TIP34B, TIP34C TIP33, TIP33A, TIP33B, TIP33C TIP34 TIP34A TIP34C equivalent TIP33C texas instruments tip34 TIP33 TIP33A TIP33B TIP34B

    BD249 TEXAS INSTRUMENTS

    Abstract: BD149 BD249C TEXAS INSTRUMENTS B0249C bd249 B0249A 3055 5C pnp transistor B0249 BD149A BD249A
    Text: BD249, BD249A, BD249B, BD249C FOR POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIO N S DESIGN ED FOR CO M PLEM EN TARY USE WITH BD250A-C 125 W at 25 ° C Case Temperature 25 A Rated Collector Current Min fT of 3 MHz at 10 V, 1 A mechanical data TO-3P


    OCR Scan     		PDF BD249, BD249A, BD249B, BD249C BD250A-C BD249 BD149A BD249B 40PEP BD249 TEXAS INSTRUMENTS BD149 BD249C TEXAS INSTRUMENTS B0249C B0249A 3055 5C pnp transistor B0249 BD249A

    Untitled

    Abstract: No abstract text available
    Text: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4&#39;5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF 0D17S4 BSD10 BSD12

    TIP42C EQUIVALENT

    Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
    Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C


    OCR Scan     		PDF TIP42, TIP42A. TIP42B. TIP42C TIP41, TIP41A, TIP41B, TIP41C TIP42 TIP42A TIP42C EQUIVALENT TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    B0239B

    Abstract: bd240
    Text: HA RR IS S E M I C O N D SE CT OR BD240, BD240A, BD240B, BD240C SbE ]> • Fite Number 670 4 3 G 2 27 1 GG4Gb5fl EUE H I H A S Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ¡er and High-Speed-Switching Applications Features: ■ 30 W at 25°C case temperature


    OCR Scan     		PDF BD240, BD240A, BD240B, BD240C BD239, BD239A, B0239B, BD239C B0239B bd240

    Untitled

    Abstract: No abstract text available
    Text: BDT65; 65A BDT65B; 65C _ y v SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. TO-220 plastic envelope. PNP complements are


    OCR Scan     		PDF BDT65; BDT65B; O-220 BDT64; BDT65 bbS3T31

    dw94c

    Abstract: No abstract text available
    Text: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT


    OCR Scan     		PDF BDW93C BDW94B/BDW94C BDW93C T0-220 BDW94C. BDW94B dw94c

    d1711

    Abstract: transistor sot-23 marking L8 BCX70J MMBT3904 990fl l8 sot23
    Text: SA MS UN G S E M I C O N D U C T O R INC BCX70J 14E D ¡ 7 % 4 1 4 a 0007555 ñ | NPN EPITAXIAL SILICON TRANSÌSTOR T-aq- q GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF BCX70J MMBT3904 OT-23 100MHz 990fl d1711 transistor sot-23 marking L8 990fl l8 sot23

    IRGPC40FD2

    Abstract: ge c122 transistor c117
    Text: hrtemational pd-smus Big Rectifier_ IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


    OCR Scan     		PDF IRGPC40FD2 10kHz) GPC40FD2 O-247AC 554S2 IRGPC40FD2 ge c122 transistor c117