Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BD131 BD132 Search Results

    BD131 BD132 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD131

    Abstract: BD132 bd132 equivalent BD132A
    Text: PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO Ratings Collector-Emitter Voltage


    Original     		PDF BD132 BD131 BD132are O-126 O-126 BD131 BD132 bd132 equivalent BD132A

    7430 ic data sheet

    Abstract: BD131 2108 npn transistor bd131 equivalent BD132 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A


    Original     		PDF M3D100 BD131 O-126; BD132. MAM254 SCA63 115002/00/03/pp8 7430 ic data sheet BD131 2108 npn transistor bd131 equivalent BD132 BP317

    BD132

    Abstract: bd132 equivalent BD131
    Text: SavantIC Semiconductor Product Specification BD132 Silicon PNP Power Transistors DESCRIPTION •Complement to type BD131 ·With TO-126 package ·High current Max:- 3A ·Low voltage (Max: -45V) APPLICATIONS ·For general purpose power applications PINNING


    Original     		PDF BD132 BD131 O-126 -50mA 100MHz BD132 bd132 equivalent BD131

    BD131

    Abstract: BD132 2A 50V NPN
    Text: SavantIC Semiconductor Product Specification BD131 Silicon NPN Power Transistors DESCRIPTION •Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING PIN


    Original     		PDF BD131 BD132 O-126 100MHz BD131 BD132 2A 50V NPN

    bd131 equivalent

    Abstract: BD131 EQUIVALENT IC bd131 BD132
    Text: Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors • DESCRIPTION ·Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING


    Original     		PDF BD131 BD132 O-126 100MHz bd131 equivalent BD131 EQUIVALENT IC bd131 BD132

    BD131

    Abstract: bd131 bd132 BD132 bd131 equivalent
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS NPN PNP BD131 BD132 EC TO-126 Plastic Package B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage


    Original     		PDF BD131 BD132 O-126 C-120 132Rev 120403D BD131 bd131 bd132 BD132 bd131 equivalent

    MAR 733

    Abstract: BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor


    Original     		PDF M3D100 BD131 O-126; BD132. MAM254 O-126. SCA53 117047/00/02/pp8 MAR 733 BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317

    BD131

    Abstract: BD132 bd131 bd132
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON EPITAXIAL POWER TRANSISTORS NPN PNP BD131 BD132 EC TO-126 Plastic Package B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BD131 BD132 O-126 C-120 132Rev 120403D BD131 BD132 bd131 bd132

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS NPN PNP BD131 BD132 EC TO-126 Plastic Package B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage


    Original     		PDF BD131 BD132 O-126 C-120 132Rev 120403D

    BD131

    Abstract: BD132 bd131 bd132
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN/PNP SILICON EPITAXIAL POWER TRANSISTORS BD131 NPN BD132 PNP TO-126 General Purpose, Medium Power Applications.


    Original     		PDF BD131 BD132 O-126 25deg C-120 bd131 bd132

    to126

    Abstract: TO-126 BD825-10 BD826-10 BD137-10 BD825 bd138-16 BD826 BD136 BD139-16
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN GENERAL PURPOSE POWER TRANSISTORS VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) TO-126 45 3000 15000 40 >40 60 BD135 TO-126 45 1500 8000


    Original     		PDF O-126 BD135 BD135-10 BD135-16 BD137 BD137-10 to126 TO-126 BD825-10 BD826-10 BD137-10 BD825 bd138-16 BD826 BD136 BD139-16

    bd826

    Abstract: BD828-10 BD136-16 BD138-16 BD140-16 BD825-10 to126 philips power transistor bd139 BD140 philips BD138-10
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE POWER TRANSISTORS VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) TO-126 45 3000 15000 40 >40 60 BD136 TO-126 45 1500 8000


    Original     		PDF O-126 BD136 BD136-10 BD136-16 BD138 BD138-10 bd826 BD828-10 BD136-16 BD138-16 BD140-16 BD825-10 to126 philips power transistor bd139 BD140 philips BD138-10

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BD131 NPN power transistor 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A


    OCR Scan     		PDF BD131 BD131 BD132. 115002/00/03/pp8

    bd132

    Abstract: transistor ALG 20
    Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF BD132 OT-32 BD131. bbS3T31 0D34251 BD131 BD132 bb53T31 transistor ALG 20

    BD131

    Abstract: BD131A V4020
    Text: BD131 J v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic package fo r general purpose, m edium pow er applications. P-N-P com plem ent is BD132. QUICK REFERENCE D ATA Collector-base voltage open e m itte r


    OCR Scan     		PDF BD131 OT-32 BD132. BD131 BD131A V4020

    bd131

    Abstract: transistor BD131
    Text: Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 45 V). DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose power applications.


    OCR Scan     		PDF BD131 O-126; BD132. bd131 transistor BD131

    transistor h44

    Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
    Text: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)


    OCR Scan     		PDF BD132 OT-32 BD131. O-126 OT-32) 00342SM transistor h44 BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32

    d1694

    Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
    Text: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base


    OCR Scan     		PDF BD131 OT-32 BD132. O-126 OT-32) 345l4b d1694 transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv

    BD132

    Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
    Text: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.


    OCR Scan     		PDF BD132 711002b GDM2770 OT-32 BD131. O-126 OT-32) BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GQM2771 IEC134 transistor af 126 d5224 transistor Bd132

    TV RADIO IC free

    Abstract: bf194 BD124 BF195 BD116 BF180 BFW87 BF196 BD133 BF197
    Text: 54 T ran sisto rs Continued Electronic Valves Z & I Aero Services Ltd London England 1972-73 ^JapìiX Notes T03 15W 30m c 1t +80 T03 45W 95m cl2i +60 55<2 2A 1A BD123 BD124 S/NPN S/NPN T03 MD17 45W 15W 85m c<2) 60m cm +90 +70 55<2) 60‘2’ 1A 0 .5A BD131


    OCR Scan     		PDF BD116 BD121 95mcl2i BD123 85mc121 BF196 250mW 400mcl2t 39dbl3> BF197 TV RADIO IC free bf194 BD124 BF195 BF180 BFW87 BD133

    BD132

    Abstract: FE21
    Text: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P tran sisto r in a SOT-32 plastic package fo r general purpose, m edium power applications. N-P-N com plem ent is BD131. Q U IC K R EFE R E N C E D A T A “ v CBO max. 45 V C o lle c to r-e m itte r voltage open base


    OCR Scan     		PDF BD132 OT-32 BD131. OT-32) BD132 FE21

    BD131

    Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
    Text: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.


    OCR Scan     		PDF BD131 711005b Q0427faD OT-32 BD132. O-126 OT-32) D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132

    bd131

    Abstract: BD132
    Text: Philips Semiconductors Product specification PNP power transistor BD132 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 45 V). emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose power applications.


    OCR Scan     		PDF BD132 O-126; BD131. 25ecified. MG084! bd131 BD132

    transistor c 458

    Abstract: BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor
    Text: DISCRETE SEMICONDUCTORS BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors


    OCR Scan     		PDF BD132 O-126; BD131. MAM272 O-126 transistor c 458 BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor