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    BD135 EQUIVALENT Search Results

    BD135 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    BD135 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bd135 TRANSISTOR REPLACEMENT GUIDE

    Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc


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    BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary PDF

    BD135 CURVES

    Abstract: BD140 application circuits circuits BD139 BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140
    Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


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    BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD135 CURVES BD140 application circuits circuits BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140 PDF

    BD139

    Abstract: BD139-10 bd140-10
    Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


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    BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD139-10 bd140-10 PDF

    Philips Application Note ECO6907

    Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as


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    PDF

    Motorola transistor 9410

    Abstract: 91 c6 bd135 equivalent icer capacitor motorola 1N4148 TP3032 1N4148 BD135 NT 407 F TRANSISTOR
    Text: MOTOROLA Order this document by TP3032/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3032 The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • Specified 26 Volts, 960 MHz Characteristics


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    TP3032/D TP3032 TP3032 TP3032/D* Motorola transistor 9410 91 c6 bd135 equivalent icer capacitor motorola 1N4148 1N4148 BD135 NT 407 F TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP3021/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3021 The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 820 – 960 MHz bandwidth, it has been specifically designed for


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    TP3021/D TP3021 TP3021 MCM145100/D* PDF

    bd135 equivalent

    Abstract: TP3069 motorola rf device NF 935 bd135 input impedance transistor tp3069
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Pow er Transistor The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features


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    TP3069 TP3069 bd135 equivalent motorola rf device NF 935 bd135 input impedance transistor tp3069 PDF

    bd135 equivalent

    Abstract: irt 840 1509-50 TP3062 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR
    Text: MOTOROLA SC XSTRS/R F b=)E D b3b7254 D1GDT0G 172 noT b MOTOROLA I SEMICONDUCTOR • ■ TECHNICAL DATA The RF Line U H F P o w er Tkransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold


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    b3b7254 TP3062 TP3062 bd135 equivalent irt 840 1509-50 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR PDF

    bd135 equivalent

    Abstract: bd135 input impedance rBE BD135 resistor 2,2
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TP3062 UHF Power Thransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including


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    TP3062 TP3062 bd135 equivalent bd135 input impedance rBE BD135 resistor 2,2 PDF

    transistor bd135

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON


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    TP3032 TP3032 BD135 transistor bd135 PDF

    equivalent transistor K 2767

    Abstract: transistor K 2767 bd135 equivalent transistor bd135
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3019S The RF Line UHF Power Transistor The TP3019S is designed for 24 V common emitter base station amplifiers. Operating in the 820-960 MHz bandwidth, the device has been specifically designed for use in analog and digital GSM systems.


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    TP3019S TP3019S equivalent transistor K 2767 transistor K 2767 bd135 equivalent transistor bd135 PDF

    si diode 1N4007

    Abstract: motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007 TP3064
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor The TP3064 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The


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    TP3064 si diode 1N4007 motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007 PDF

    bd135 equivalent

    Abstract: transistor bd135 motorola 1N4148 microstrip resistor microstrip line
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor The TP3021 is designed for 24 V com mon em itter base station amplifiers. Operating in the 8 2 0 -9 6 0 MHz bandwidth, it has been specifically designed for use in analog and digital GSM system s as a medium power output device.


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    TP3021 BD135 bd135 equivalent transistor bd135 motorola 1N4148 microstrip resistor microstrip line PDF

    1206 transistor

    Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •


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    MRF6406 1206 transistor chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent PDF

    TP5040

    Abstract: ATC100A4R7DP50 100A120D ATC100A470JP50 ATC100A101 ATC100A470
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5040 The RF Line UH F P o w e r T ra n sisto r 40 W — 380 to 512 M Hz UHF POWER TRANSISTOR NPN SILICON . . . designed for 24 Volt UHF large-signal common emitter am plifier applications in industrial and commercial FM equipment operating in the 380 to 512 MHz frequency


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    TP5040 0A470JP50 ATC100A4R7DP50 100A5R6DP50 ATC100A150DP50 100A120DP50 ATC100A101KP50 1N4007 BD135 TP5040 100A120D ATC100A470JP50 ATC100A101 ATC100A470 PDF

    CHIP DIODE m7

    Abstract: D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7254 » 0 Q1 S 2Ü 1 fi I MOTb "P 3 3 -Û 7 ' MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line U H F P o w e r T ra n s is to r T he TP3012 is d e sig n e d fo r 900 M H z m o b ile s ta tio n s in both a n a lo g a n d d ig ita l a p p li­


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    b3b72S4 TP3012 Contin48 T-33-07 CHIP DIODE m7 D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf PDF

    cito RF

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3040 The RF Line UHF Power Transistor 40 W — 960 MHz UHF POWER TRANSISTOR NPN SILICON T h e T P 3040 is s p e c ific a lly d e s ig n e d fo r o p e ra tio n as th e fin a l s ta g e in 960 M H z m o b ile ba s e s ta tio n a m p lifie r s . U tiliz a tio n o f e m itte r b a lla s t r e s is to rs a n d g o ld m e ta lliz a tio n


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    TP3040 1N4148 BD135 cito RF PDF

    TANTAL C-16

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPM4040 Th e RF Line UHF Power Transistor T h e TPM 4040 is an in tern ally m atched tra n sisto r in a push-pull p ackage sp e cially d esig ned for m ulti-octave bandw id th high g ain and p ow er ap plica tio n s. Its internal


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    TPM4040 1N4007 BD135 TANTAL C-16 PDF

    SU 179 transistor

    Abstract: transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF15060 M RF15060S RF Pow er Bipolar Transistors Designed for broadband commercial and industrial applications at frequen­ cies from 1400 to 1600 MHz. The high gain and broadband performance of


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    IS12I IS22I MRF15060 MRF15060S SU 179 transistor transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts PDF

    transistor fn 155

    Abstract: motorola rf device transistors equivalent 0912
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF15060 MRF15060S RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequen­ cies from 1400 to 1600 MHz. The high gain and broadband performance of


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    IS22I MRF15060 MRF15060S transistor fn 155 motorola rf device transistors equivalent 0912 PDF

    pont de diode

    Abstract: TP3064 MOTOROLA TRANSISTOR 935 1N4007 BD135 motorola rf Power Transistor transistor j4 ss 88 Motorola 1N4007
    Text: Order th is data sheet by TP3064/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3064 The RF Line RF Power Transistor The TP3064 is designed for960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations


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    TP3064/D TP3064 TP3064 2PHX33580Q-0 TP3064/D pont de diode MOTOROLA TRANSISTOR 935 1N4007 BD135 motorola rf Power Transistor transistor j4 ss 88 Motorola 1N4007 PDF

    5Bp smd

    Abstract: smd transistor 8g 1N4148 ATC100A BD135 CS-12 MRF6406 CASE-319 bd135 equivalent Transistor t 2 smd motorola
    Text: Order this data sheet by MRF6406/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an


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    MRF6406/D MRF6406 MRF6406 2PHX33607Q-0 MRF6406/D 5Bp smd smd transistor 8g 1N4148 ATC100A BD135 CS-12 CASE-319 bd135 equivalent Transistor t 2 smd motorola PDF

    bd135 equivalent

    Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


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    MRF20060 MRF20060S Impedanc159 IS22I bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006 PDF

    bd136 equivalent

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high


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    MRF20060 MRF20060S Impedan70 IS22I bd136 equivalent RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3 PDF