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    BD201F Search Results

    BD201F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD201F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BD201F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD201F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD201F Philips Semiconductors SILICON EPITAXIAL POWER TRANSISTORS Scan PDF

    BD201F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD201F

    Abstract: BD203F BD202 BD201
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD201F/203F DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD201F 60V(Min)- BD203F ·Complement to Type BD202F/204F APPLICATIONS ·Designed for use in hi-fi equipment delivering an output


    Original     		PDF BD201F/203F BD201F BD203F BD202F/204F BD201F BD203F BD202 BD201

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    BD201F

    Abstract: BDX77F BD203F BD202F BD204F BDX78F
    Text: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .


    OCR Scan     		PDF BD201F; BD203F; BDX77F 7110a2b T-33-0 OT186 BD202F, BD204F BDX78F. BD201F BDX77F BD203F BD202F BDX78F

    Untitled

    Abstract: No abstract text available
    Text: BD202F; BD204F BDX78F PHILIPS in t e r n a t io n a l SbE ]> • 7110fl2t 0042fl5b flbO M P H I N T-33-17 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively.


    OCR Scan     		PDF BD202F; BD204F BDX78F 7110fl2t 0042fl5b T-33-17 OT186 BD201F, BD203F BDX77F

    S293

    Abstract: BDX71 BD201 BD201F BD202F BD203F BD204F BDX77F BDX78F q342
    Text: BD201F; BD203F; BDX77F SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BD202F, BD204F and BDX78F. QUICK REFERENCE DATA BD201F BD203F BDX77F Collector-base voltage


    OCR Scan     		PDF BD201F; BD203F; BDX77F OT186 BD202F, BD204F BDX78F. BD201F BD203F S293 BDX71 BD201 BD202F BDX77F BDX78F q342

    BD203F

    Abstract: BD201F BD202F BD204F BDX77F BDX78F
    Text: BD202F; BD204F BDX78F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes w ith an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively. Q UICK REFERENCE D A T A BD202F BD204F BDX78F


    OCR Scan     		PDF BD202F; BD204F BDX78F OT186 BD201F, BD203F BDX77F BD202F BD204F BD201F BDX78F

    Untitled

    Abstract: No abstract text available
    Text: BD201F; BD203F; BDX77F _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BD202F, BD204F and BDX78F. QUICK REFERENCE DATA BD201F


    OCR Scan     		PDF BD201F; BD203F; BDX77F OT186 BD202F, BD204F BDX78F. BD201F BD203F

    BD 201F

    Abstract: No abstract text available
    Text: BD201F; BD203F; BDX77F PHILIPS INTERNATIONAL SbE D • 711002b 0042Û0Ô AMS ■ PHIN T '3 3 - O ^ SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .


    OCR Scan     		PDF BD201F; BD203F; BDX77F 711002b BD204F 711005b T-33-09 BD 201F

    Untitled

    Abstract: No abstract text available
    Text: J V BD202F; BD204F BDX78F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and B D X 7 7 F respectively. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF BD202F; BD204F BDX78F OT186 BD201F, BD203F BD202F

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BD204

    Abstract: BD202F til 31a BD201F BD203F BD204F BDX77F BDX78F Philips 119
    Text: _ PHILIPS INTERNATIONAL SbE D • BD202F; BD204F BDX78F J 7110Û2L 0042fl5b flbO M P H I N T-33-l7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors inSOT186 envelopes with an electrically insulated mounting base.


    OCR Scan     		PDF BD202F; BD204F BDX78F 7110fl2b D042fl5b T-33-1 inSOT186 BD201F, BD203F BDX77F BD204 BD202F til 31a BD201F BD204F BDX78F Philips 119

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11