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    BD203 NPN Search Results

    BD203 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - General Purpose High Current NPN Transistor Array Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    BD203 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications


    Original     		O-220 BD201, BD203, BDX77 BD202, BD204 BDX78 PDF

    BD201

    Abstract: BD202 BD204 BDx77 BDX78 BD203
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications


    Original     		O-220 BD201, BD203, BDX77 BD202, BD204 BDX78 BD201 BD202 BDx77 BDX78 BD203 PDF

    BDx77

    Abstract: BD201 BD202 BD203 BD204 BDX78
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78


    Original     		O-220 BD201, BD203, BDX77 BD202, BD204 BDX78 BDx77 BD201 BD202 BD203 BDX78 PDF

    BD203

    Abstract: BD201 BD204 BD202 BD203 npn NPN pnp MATCHED PAIRS IC03 Ratings vce-20
    Text: NPN BD201 – BD203 PNP BD202 – BD204 SILCON EPITAXIAL-BASE POWER TRANSISTORS The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or


    Original     		BD201 BD203 BD202 BD204 BD201 BD203 O-220 BD202 BD204 BD203 npn NPN pnp MATCHED PAIRS IC03 Ratings vce-20 PDF

    BD203 npn

    Abstract: BD203 BD204
    Text: SavantIC Semiconductor Product Specification BD203 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low saturation voltage ·Complement to type BD204 ·Wide area of safe operation APPLICATIONS ·For medium power switching and amplifier applications


    Original     		BD203 O-220C BD204 BD203 npn BD203 BD204 PDF

    BD201

    Abstract: BD203 BD203 npn transistor bd202 bd202
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD201/203 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202/204 APPLICATIONS ·Designed for use in hi-fi equipment delivering an output


    Original     		BD201/203 BD201 BD203 BD202/204 tp10ms BD201 BD203 BD203 npn transistor bd202 bd202 PDF

    BD204

    Abstract: BD202 BD203 BD203 npn BD201
    Text: PNP BD202 – BD204 NPN BD201 – BD203 SILCON EPITAXIAL-BASE POWER TRANSITORS The BD202 and BD204 are PNP transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or


    Original     		BD202 BD204 BD201 BD203 BD202 BD204 O-220 BD201 BD203 BD203 npn PDF

    Bdx77

    Abstract: No abstract text available
    Text: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3,88 2.29 2.79 2.54 3.43


    OCR Scan     		BD201, BD203, BDX77 BD202, BD204 BDX78 Bdx77 PDF

    BDx77

    Abstract: BD203 npn BD201 BD202 BD203 BD204 BDX78 ic 324
    Text: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM MIN MAX A 14.42 16.51 B 9.63 10.67


    OCR Scan     		BD201, BD203, BDX77 BDX77 BD202, BD204 BDX78 BD203 npn BD201 BD202 BD203 BDX78 ic 324 PDF

    BDX77

    Abstract: No abstract text available
    Text: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications MIN MAX 14.42 9,63 3,56 16,51 10.67 4,83 0,90 1,40 3,88 DIM A B C D E F G H J K L M N - 1,15 3,75 2,29


    OCR Scan     		BD201, BD203, BDX77 BD202, BD204 BDX78 BDX77 PDF

    BD203

    Abstract: bdx77
    Text: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or


    OCR Scan     		BD201 BD203 BDX77 BD202, BD204 O-220. BD203 bdx77 PDF

    Untitled

    Abstract: No abstract text available
    Text: _/ V _ BD202 BD204 BDX78 SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 f l or


    OCR Scan     		BD202 BD204 BDX78 BD201, BD203, BDX77 BD204 O-220. PDF

    BD204

    Abstract: BD202 BDX78 BD201 80204 BD203 BDX77 IEC134
    Text: BD202 BD204 BDX78 -/V . SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Ï or


    OCR Scan     		BD202 BD204 BDX78 BD201, BD203, BDX77 BD202 BD204 O-220. BDX78 BD201 80204 BD203 IEC134 PDF

    BD202 philips

    Abstract: bd204 Z624 BDX78 saf* philips bd202
    Text: BD202 BD204 BDX78 PHILIPS INTERNATIONAL SbE D • 711002b 004Sôlb Til H P H I N T - J 3 - 2 ./ SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î2 or


    OCR Scan     		BD202 BD204 BDX78 711002b BD201, BD203, BDX77 O-220. BD202 philips Z624 BDX78 saf* philips PDF

    BD203

    Abstract: BD204 UD203 bd202a BD20 BD201
    Text: SEMELAB 1 2 3 4 5 - 1E Al 6 S (cQ > ~ S 1 G SEMELAB BD201 BD203 N-P-N S IL IC O N E P IT A X IA L -B A S E A.F. P O W E R T R A N S IS T O R S N - F 'N silicon epitaxial-base power tr a n s is io i s in n plaint. envelope. Wi»h t h i n p - n - p compl eme nts 00202 and BD204 they a r e p r i m n r i U intended for use in hi ii


    OCR Scan     		BD201 BD203 BP202 BD204 O-22U BD201 UD203 300ns BD203 UD203 bd202a BD20 PDF

    BD201

    Abstract: UD203 BD203
    Text: SEMELAQ I 2 3 i 5 “ lg A 6 2 PIO-5 2 Ö SEMELAB BD201 BD203 N-P-N SILICON EPITAXIAL-BASE A.F. POW ER TRANSISTORS N - r- N s ilic o n e p it a x ia l-bnsc po\ser t r a n s is t o is in a p ln s ru envelo pe W i 'h t h u t p-n-p co m p le m e n ts IÎD 202 and |JD2(M they a r e p r im a r ils intended fo r use »n h» fi


    OCR Scan     		0-52O BD201 BD203 HD204 O-22U BD201 15D203 300tib UD203 BD203 PDF

    BD203

    Abstract: BD201 BDx77 T-33-11 BD202 BD203 npn BD204 BDX78
    Text: BD201 B D 203 BDX77 PHILIPS INTERNATIONAL SbE D m VllüöEb □D4S7TÖ 07b I PHIN r-33 SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. W ith th e ir PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t o f 15 to 25 W in to a 4 £2 or


    OCR Scan     		BD201 BD203 BDX77 711002b r-33-il BD202, BD204 BDX78 BD201 BD203 BDx77 T-33-11 BD202 BD203 npn PDF

    BD141

    Abstract: BD124 BD124P BD133 BD150 BD144 BD123 BD141 PNP BD136 bd130
    Text: 37E D S E M E L A B LTD 6133157 G00DD3fl S im senM ¡y £ _ hFE @ VCE/'C *T pD 5 5 4 4 15 15min 15min 40-300 40-300 20-70 10/0.1 10/0.1 5/0.5 5/0.5 4/4 60M 60M 60M 60M 1M 45 45 15 15 100 45 45 60 45 45 3 3 3 0.5 0.5 40mln 40min 20min 40-250 40-250 12/0.5 12/0.5


    OCR Scan     		D000G3Ã 15min BD123 BD124 BD124P T0220 BD130 T0126 40min BD141 BD124P BD133 BD150 BD144 BD123 BD141 PNP BD136 bd130 PDF

    BD313

    Abstract: BD203 BD203 npn npn 40411 BD142 BD181 BD182 BD183 BD201 BD202
    Text: 025 63 54 A DV AN C E D SEM IC ON DUCTOR ADVANCED SEMICONDUCTOR flE DE | 0550354 82D 00052 □□□□□SB I S I L I C O D 7"-? J^o / N TRANSISTORS MAXIMUM RATINGS P d @ Tc=25°C DEVICE TYPE NO. 40408 40411 40412 40458 40537 40539 40594 40595 40608 40611


    OCR Scan     		T0220 BD244C BD278 BD278A BD311 BD313 BD203 BD203 npn npn 40411 BD142 BD181 BD182 BD183 BD201 BD202 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0 2 5 6 3 5 4 ADVANCED S E MICONDUCTOR aa ADVANCED SEMI CO NDUC TO R 82D 0 0 0 5 2 D E | ü 2 S û 354 DDGGDSE D 7- - J J - ù / 0 I SILICON TRANSISTORS MAXIMUM RATINGS P d @ Tc=25°C DEVICE TYPE NO. 40408 40411 40412 40458 40537 40539 40594 40595 40608 40611


    OCR Scan     		BD142 BD181 BD182 BD183 BD201 BD202 BD203 BD204 BD239 BD239A PDF

    T1P31C

    Abstract: b0239c BDXS3 B0241A T1P122 B0243 B0243B T1P-31C T1P120 BDXS3C
    Text: MIN MAX A B C E F G H J 14,42 9,63 3 ,56 K i M N 12,70 - 16.51 10.67 4,83 0 .9 0 1,40 3 ,68 2,79 3,43 0 ,56 14,73 6,35 2,92 DIM o f1 i| L D J g - 1,15 3,75 2,29 2,54 - 2,03 7 3 1,2 4 DEG TP-220 Power Package Transistors NPN Maximum Rating« Type No. Electrical Characteristics (Tas35*C, Unless Otherwise Specified)


    OCR Scan     		TP-220 Tas35 T1P122 TIP130 TIP131 TIP132 T1P31C b0239c BDXS3 B0241A T1P122 B0243 B0243B T1P-31C T1P120 BDXS3C PDF

    BD139 heat sink

    Abstract: BD133 BD23B box78 bux87 B0137 BF468 BD232 bzw86 BD136
    Text: Transistors silicon plastic-encapsulated transistors book 1 parts 1 and 2 Type No. N-P-N VcBO VcEO P-N-P V Outline TO-126 M axim u m Ratings •CM IctAV) (V ) (A ) (A) T| (°C> Hfe at fT Vcasat) m in. m ax. Ic m in. m ax. Ptot Tmb= 25 C (W) Im A) (M H z) (V)


    OCR Scan     		O-126 BF468 BF470 BF457 BF468 BF459 BD232 BD136 B0137 h--22-> BD139 heat sink BD133 BD23B box78 bux87 B0137 BD232 bzw86 BD136 PDF

    T1P42C

    Abstract: bd534j T1P102
    Text: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70


    OCR Scan     		O-220 O-220 TIP125 TIP126 TIP127 TIP135 TIP136 T1P42C bd534j T1P102 PDF

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


    OCR Scan     		O-220 O-220 O-237-2 00014QÃ T1P42C PDF