BD203 NPN Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications

BD201

Abstract: BD202 BD204 BDx77 BDX78 BD203
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications

Bdx77

Contextual Info: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3,88 2.29 2.79 2.54 3.43

BDx77

Abstract: BD203 npn BD201 BD202 BD203 BD204 BDX78 ic 324
Contextual Info: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM MIN MAX A 14.42 16.51 B 9.63 10.67

BDx77

Abstract: BD201 BD202 BD203 BD204 BDX78
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78

BD203

Abstract: BD201 BD204 BD202 BD203 npn NPN pnp MATCHED PAIRS IC03 Ratings vce-20
Contextual Info: NPN BD201 – BD203 PNP BD202 – BD204 SILCON EPITAXIAL-BASE POWER TRANSISTORS The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or

BDX77

Contextual Info: BD201, BD203, BDX77 BD201, BD203, BDX77 NPN PLASTIC POWER TRANSISTORS Complementary BD202, BD204 and BDX78 Medium Power Switching and Amplifier Applications MIN MAX 14.42 9,63 3,56 16,51 10.67 4,83 0,90 1,40 3,88 DIM A B C D E F G H J K L M N - 1,15 3,75 2,29

BD203 npn

Abstract: BD203 BD204
Contextual Info: SavantIC Semiconductor Product Specification BD203 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low saturation voltage ·Complement to type BD204 ·Wide area of safe operation APPLICATIONS ·For medium power switching and amplifier applications

BD201

Abstract: BD203 BD203 npn transistor bd202 bd202
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD201/203 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD201 60V(Min)- BD203 ·Complement to Type BD202/204 APPLICATIONS ·Designed for use in hi-fi equipment delivering an output

BD204

Abstract: BD202 BD203 BD203 npn BD201
Contextual Info: PNP BD202 – BD204 NPN BD201 – BD203 SILCON EPITAXIAL-BASE POWER TRANSITORS The BD202 and BD204 are PNP transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or

BD203

Abstract: bdx77
Contextual Info: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or

Contextual Info: _/ V _ BD202 BD204 BDX78 SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 f l or

BD204

Abstract: BD202 BDX78 BD201 80204 BD203 BDX77 IEC134
Contextual Info: BD202 BD204 BDX78 -/V . SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Ï or

BD202 philips

Abstract: bd204 Z624 BDX78 saf* philips bd202
Contextual Info: BD202 BD204 BDX78 PHILIPS INTERNATIONAL SbE D • 711002b 004Sôlb Til H P H I N T - J 3 - 2 ./ SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î2 or

BD203

Abstract: BD204 UD203 bd202a BD20 BD201
Contextual Info: SEMELAB 1 2 3 4 5 - 1E Al 6 S (cQ > ~ S 1 G SEMELAB BD201 BD203 N-P-N S IL IC O N E P IT A X IA L -B A S E A.F. P O W E R T R A N S IS T O R S N - F 'N silicon epitaxial-base power tr a n s is io i s in n plaint. envelope. Wi»h t h i n p - n - p compl eme nts 00202 and BD204 they a r e p r i m n r i U intended for use in hi ii

BD201

Abstract: UD203 BD203
Contextual Info: SEMELAQ I 2 3 i 5 “ lg A 6 2 PIO-5 2 Ö SEMELAB BD201 BD203 N-P-N SILICON EPITAXIAL-BASE A.F. POW ER TRANSISTORS N - r- N s ilic o n e p it a x ia l-bnsc po\ser t r a n s is t o is in a p ln s ru envelo pe W i 'h t h u t p-n-p co m p le m e n ts IÎD 202 and |JD2(M they a r e p r im a r ils intended fo r use »n h» fi

BD203

Abstract: BD201 BDx77 T-33-11 BD202 BD203 npn BD204 BDX78
Contextual Info: BD201 B D 203 BDX77 PHILIPS INTERNATIONAL SbE D m VllüöEb □D4S7TÖ 07b I PHIN r-33 SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. W ith th e ir PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t o f 15 to 25 W in to a 4 £2 or

BD141

Abstract: BD124 BD124P BD133 BD150 BD144 BD123 BD141 PNP BD136 bd130
Contextual Info: 37E D S E M E L A B LTD 6133157 G00DD3fl S im senM ¡y £ _ hFE @ VCE/'C *T pD 5 5 4 4 15 15min 15min 40-300 40-300 20-70 10/0.1 10/0.1 5/0.5 5/0.5 4/4 60M 60M 60M 60M 1M 45 45 15 15 100 45 45 60 45 45 3 3 3 0.5 0.5 40mln 40min 20min 40-250 40-250 12/0.5 12/0.5

BD313

Abstract: BD203 BD203 npn npn 40411 BD142 BD181 BD182 BD183 BD201 BD202
Contextual Info: 025 63 54 A DV AN C E D SEM IC ON DUCTOR ADVANCED SEMICONDUCTOR flE DE | 0550354 82D 00052 □□□□□SB I S I L I C O D 7"-? J^o / N TRANSISTORS MAXIMUM RATINGS P d @ Tc=25°C DEVICE TYPE NO. 40408 40411 40412 40458 40537 40539 40594 40595 40608 40611

Contextual Info: 0 2 5 6 3 5 4 ADVANCED S E MICONDUCTOR aa ADVANCED SEMI CO NDUC TO R 82D 0 0 0 5 2 D E | ü 2 S û 354 DDGGDSE D 7- - J J - ù / 0 I SILICON TRANSISTORS MAXIMUM RATINGS P d @ Tc=25°C DEVICE TYPE NO. 40408 40411 40412 40458 40537 40539 40594 40595 40608 40611

T1P31C

Abstract: b0239c BDXS3 B0241A T1P122 B0243 B0243B T1P-31C T1P120 BDXS3C
Contextual Info: MIN MAX A B C E F G H J 14,42 9,63 3 ,56 K i M N 12,70 - 16.51 10.67 4,83 0 .9 0 1,40 3 ,68 2,79 3,43 0 ,56 14,73 6,35 2,92 DIM o f1 i| L D J g - 1,15 3,75 2,29 2,54 - 2,03 7 3 1,2 4 DEG TP-220 Power Package Transistors NPN Maximum Rating« Type No. Electrical Characteristics (Tas35*C, Unless Otherwise Specified)

BD139 heat sink

Abstract: BD133 BD23B box78 bux87 B0137 BF468 BD232 bzw86 BD136
Contextual Info: Transistors silicon plastic-encapsulated transistors book 1 parts 1 and 2 Type No. N-P-N VcBO VcEO P-N-P V Outline TO-126 M axim u m Ratings •CM IctAV) (V ) (A ) (A) T| (°C> Hfe at fT Vcasat) m in. m ax. Ic m in. m ax. Ptot Tmb= 25 C (W) Im A) (M H z) (V)

T1P42C

Abstract: bd534j T1P102
Contextual Info: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN