bd237
Abstract: BD233 BD235
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES 1. EMITTER Power dissipation PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 2 A ICM: Collector-base voltage BD233 : 45
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O-126
BD233/235/237
O-126
BD233
BD235:
BD237:
BD237
150mA
BD235
bd237
BD233
BD235
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bd237
Abstract: BD233
Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units
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Original
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BD233/235/237
O-126
BD233
BD235
BD237
bd237
BD233
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Plastic-Encapsulate Transistors
Abstract: BD233 417 TRANSISTOR BD237-10 BD235 BD237 IC 7400 7400 IC symbol transistor TO-126 Outline Dimensions
Text: TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR（ NPN ） TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 2 A Collector-base voltage V BR CBO : BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range
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Original
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O-126
BD233/235/237
O--126
BD233
BD235:
BD237:
BD235
BD237
Plastic-Encapsulate Transistors
BD233
417 TRANSISTOR
BD237-10
BD235
BD237
IC 7400
7400 IC symbol
transistor TO-126 Outline Dimensions
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR（ NPN ） TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 2 A Collector-base voltage V BR CBO : BD233 : 45
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Original
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O-126
BD233/235/237
BD233
BD235:
BD237:
BD235
BD237
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PDF
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IC 7400
Abstract: BD233 BD237 BD235 7400 IC symbol bd233 equivalent bd237 equivalent
Text: BD233/235/237 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD233 BD235 BD237 Unit Collector-Emitter Voltage VCBO 45 60 100 V Collector-Base Voltage VCEO 45
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Original
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BD233/235/237
O-126
BD233
BD235
BD237
IC 7400
BD233
BD237
BD235
7400 IC symbol
bd233 equivalent
bd237 equivalent
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PDF
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BD237
Abstract: BD235 bd237 equivalent BD233 BD234 bd237 datasheet bd235 datasheet SEM 238
Text: Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD234 /236 /238 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION
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BD233
BD235
BD237
O-126
BD234
BD233
BD235
BD237
bd237 equivalent
bd237 datasheet
bd235 datasheet
SEM 238
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PDF
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BD237
Abstract: BD235 BD233 BD234
Text: SavantIC Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD234 /236 /238 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1
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Original
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BD233
BD235
BD237
O-126
BD234
BD233
BD235
BD237
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PDF
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bd238 equivalent
Abstract: BD238 BD236 BD234
Text: Inchange Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD233/235 /237 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION
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Original
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BD234
BD236
BD238
O-126
BD233/235
BD234
BD236
bd238 equivalent
BD238
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PDF
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bd238
Abstract: BD236 BD234 bd238 equivalent
Text: SavantIC Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD233/235 /237 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter
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Original
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BD234
BD236
BD238
O-126
BD233/235
BD234
BD236
bd238
bd238 equivalent
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PDF
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BD233
Abstract: BD235 BD237 transistor 45 f 123 bd233 T BD235 TRANSISTOR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES yComplement to BD 234/236/238 respectively MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage
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Original
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O-126
BD233/235/237
O-126
BD233
BD235
BD237
BD233
BD235
BD237
transistor 45 f 123
bd233 T
BD235 TRANSISTOR
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PDF
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BD233
Abstract: BD234 BD237 BD235 BD236 BD238 CDIL BD238 238r BD233-BD234 CDIL BD233
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications
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BD233
BD235
BD237
BD234
BD236
BD238
BD233
BD234
BD237
BD235
BD236
BD238
CDIL BD238
238r
BD233-BD234
CDIL BD233
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PDF
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2N5192 BD441
Abstract: 2N4923 bd435 BD435/BD436 bf469 or equivalent darlington bd139 2N4921 2N4922 2N5190 2N5191
Text: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A
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O-126
2N4921
2N4922
2N4923
2N5190
2N5191
2N5192
2N5655
2N5656
2N5657
2N5192 BD441
2N4923
bd435
BD435/BD436
bf469 or equivalent
darlington bd139
2N4921
2N4922
2N5190
2N5191
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PDF
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to126 case
Abstract: BD139 BD136
Text: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A
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O-126
610-2N4923
2N4923
to126 case
BD139
BD136
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications
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BD233
BD235
BD237
BD234
BD236
BD238
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PDF
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Untitled
Abstract: No abstract text available
Text: <£s.tni-C,ond\icko\ fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BD233/235/237 TRANSISTOR(NPN) n$*r rflMlpatlori \- TO-126 j ICH- 2 A 1. EMITTER i ] I i i El 1 2! 3 PCM: 1.25W(Tamb=25t)
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BD233/235/237
O-126
BD233
BD235
BD237:
-65tto
1501C
BD23S
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PDF
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60V transistor npn 1a
Abstract: No abstract text available
Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V
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OCR Scan
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BD233/235/237
BD235
BD237
BD233
60V transistor npn 1a
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PDF
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bd233 rthj-c
Abstract: npn transistors,pnp transistors BD233 BD234 BD235 BD236 BD237 BD238
Text: IL BD233, BD235, BD237 BD234, BD236, BD238 BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B
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BD233,
BD235,
BD237
BD234,
BD236,
BD238
00Q120Ã
bd233 rthj-c
npn transistors,pnp transistors
BD233
BD234
BD235
BD236
BD238
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PDF
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cb 237
Abstract: BD235 bd233
Text: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS
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OCR Scan
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O-126
BD233/235/237
BD233
BD235
BD237:
-65TC
1501c
BD233
B0235
BD237
cb 237
BD235
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PDF
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Untitled
Abstract: No abstract text available
Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V : BD235 60 V : BD237 80
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OCR Scan
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BD233/235/237
BD235
BD237
BD233
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PDF
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bd234
Abstract: No abstract text available
Text: BD234; BD236; BD238 _ _ y v SILICON EPITAXIAL-BASE POWER TRANSISTORS P-N-P transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. N-P-N complements are BD233,
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OCR Scan
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BD234;
BD236;
BD238
OT-32
BD233,
BD235
BD237.
BD234
BD236
bd234
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PDF
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Untitled
Abstract: No abstract text available
Text: _ y \ _ BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs
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OCR Scan
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BD233
BD235
BD237
OT-32
BD234,
BD236
BD238.
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PDF
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BD237 toshiba
Abstract: No abstract text available
Text: TOSHIBA {DIS CR ETE/O PT O} Sb D E ^ T D ^ a S D 00DÖG74 BD233 BD235 IBD237I SILICON NPN EPITAXIA L BASE M ESA TYPE 9097250 TOSHIBA <DI S C R E T E /O P T O > 5òC 08074 □'' T - 3 3 ~ AUDIO POWER AMPLIFIER APPLICATIONS. Unit in tnm 7. 9 MAX. VERTICAL DEFLECTION OUTPUT.APPLICATION IN TV.
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BD233
BD235
IBD237I
BD234,
BD236
BD238
BD237
BD237 toshiba
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PDF
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BD235 PHILIPS
Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its
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OCR Scan
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BD233
BD235
BD237
711002b
aSOT-32
BD234,
BD236
BD238.
BD233
BD235
BD235 PHILIPS
bd233 T
bd237 philips
BD234
BD237-10
BD237
BD238
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PDF
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BD233
Abstract: FT501
Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D • 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SO T-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are B D 234, B D 236 and B D238. Matched pairs
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OCR Scan
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BD233
BD235
BD237
711002b
711062b
FT501
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PDF
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