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    BD235 TRANSISTOR Search Results

    BD235 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD235 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NPN pnp MATCHED PAIRS

    Abstract: bd238 NPN MATCHED PAIRS BD236 SGS bd238 equivalent BD237 bd237 equivalent complementary pairs BD235 BD236
    Text: BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.


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    BD235/BD236 BD237/BD238 BD235 BD237 OT-32 BD236 BD238 OT-32 BD235 BD237 NPN pnp MATCHED PAIRS NPN MATCHED PAIRS BD236 SGS bd238 equivalent bd237 equivalent complementary pairs PDF

    BD238

    Abstract: NPN MATCHED PAIRS NPN pnp MATCHED PAIRS BD235-BD236 bd238 equivalent BD235 BD236 bd235 datasheet BD237 BD237-BD238
    Text: BD235 BD236 BD237 BD238 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear


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    BD235 BD236 BD237 BD238 OT-32 BD236 BD238 OT-32 NPN MATCHED PAIRS NPN pnp MATCHED PAIRS BD235-BD236 bd238 equivalent bd235 datasheet BD237-BD238 PDF

    BD238

    Abstract: BD236 BD237 BD235
    Text: BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.


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    BD235/BD236 BD237/BD238 BD235 BD237 OT-32 BD236 BD238 OT-32 BD235 BD237 PDF

    2N5192 BD441

    Abstract: 2N4923 bd435 BD435/BD436 bf469 or equivalent darlington bd139 2N4921 2N4922 2N5190 2N5191
    Text: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A


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    O-126 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N5192 BD441 2N4923 bd435 BD435/BD436 bf469 or equivalent darlington bd139 2N4921 2N4922 2N5190 2N5191 PDF

    BD237

    Abstract: BD235 bd237 equivalent BD233 BD234 bd237 datasheet bd235 datasheet SEM 238
    Text: Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD234 /236 /238 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION


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    BD233 BD235 BD237 O-126 BD234 BD233 BD235 BD237 bd237 equivalent bd237 datasheet bd235 datasheet SEM 238 PDF

    BD237

    Abstract: BD235 BD233 BD234
    Text: SavantIC Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD234 /236 /238 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1


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    BD233 BD235 BD237 O-126 BD234 BD233 BD235 BD237 PDF

    bd237

    Abstract: BD235 0016114E BD236 BD238 JESD97
    Text: BD235 BD237 NPN power transistors Features • . NPN transistors Applications ■ Audio, power linear and switching application Description 3 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain


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    BD235 BD237 BD236 BD238 OT-32 O-126) bd237 BD235 0016114E BD238 JESD97 PDF

    BD233

    Abstract: BD234 BD237 BD235 BD236 BD238 CDIL BD238 238r BD233-BD234 CDIL BD233
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications


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    BD233 BD235 BD237 BD234 BD236 BD238 BD233 BD234 BD237 BD235 BD236 BD238 CDIL BD238 238r BD233-BD234 CDIL BD233 PDF

    Power Transistors TO-126 Case

    Abstract: MJE240 MJE520 datasheet MJE520 equivalent mje521 equivalent MJE243 equivalent BD139 N BD234 BD683 MJE234
    Text: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A


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    O-126 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 Power Transistors TO-126 Case MJE240 MJE520 datasheet MJE520 equivalent mje521 equivalent MJE243 equivalent BD139 N BD234 BD683 MJE234 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications


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    BD233 BD235 BD237 BD234 BD236 BD238 PDF

    BD235

    Abstract: bd237 equivalent BD237 BD238 4189
    Text: BD235 BD237 Low voltage NPN power transistors Features • Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The devices are manufactured in Planar technology with “Base Island” layout. The


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    BD235 BD237 OT-32 O-126) BD238. BD235 bd237 equivalent BD237 BD238 4189 PDF

    Plastic-Encapsulate Transistors

    Abstract: BD233 417 TRANSISTOR BD237-10 BD235 BD237 IC 7400 7400 IC symbol transistor TO-126 Outline Dimensions
    Text: TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR( NPN ) TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1.25 W(Tamb=25℃) Collector current ICM : 2 A Collector-base voltage V BR CBO : BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range


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    O-126 BD233/235/237 O--126 BD233 BD235: BD237: BD235 BD237 Plastic-Encapsulate Transistors BD233 417 TRANSISTOR BD237-10 BD235 BD237 IC 7400 7400 IC symbol transistor TO-126 Outline Dimensions PDF

    to126 case

    Abstract: BD139 BD136
    Text: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A


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    O-126 610-2N4923 2N4923 to126 case BD139 BD136 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage


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    BD233 BD235 BD237 BD234 BD236 BD238 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V : BD235 60 V : BD237 80


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    BD233/235/237 BD235 BD237 BD233 PDF

    BD238

    Abstract: BD237 BD237-BD238 BD235-BD236 2V102 NPN pnp MATCHED PAIRS
    Text: / = r SGS-THOMSON BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors In Jedec SOT-32 plastic package inteded for use In medium power linear


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    BD235/BD236 BD237/BD238 BD235 BD237 OT-32 BD236 BD238 BD239 BB237 BD237-BD238 BD235-BD236 2V102 NPN pnp MATCHED PAIRS PDF

    D237B

    Abstract: No abstract text available
    Text: rz 7 SGS-THOMSON BD235/BD236 BD237/BD238 Ä T # [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear


    OCR Scan
    BD235/BD236 BD237/BD238 BD235 BD237 OT-32 BD236 BD238 BD235/B D236/B D237/B D237B PDF

    60V transistor npn 1a

    Abstract: No abstract text available
    Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V


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    BD233/235/237 BD235 BD237 BD233 60V transistor npn 1a PDF

    Untitled

    Abstract: No abstract text available
    Text: BD233, BD235, BD237 BD234, BD236, BD238 BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5


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    BD233, BD235, BD237 BD234, BD236, BD238 PDF

    bd233 rthj-c

    Abstract: npn transistors,pnp transistors BD233 BD234 BD235 BD236 BD237 BD238
    Text: IL BD233, BD235, BD237 BD234, BD236, BD238 BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B


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    BD233, BD235, BD237 BD234, BD236, BD238 00Q120Ã bd233 rthj-c npn transistors,pnp transistors BD233 BD234 BD235 BD236 BD238 PDF

    B0237

    Abstract: GS233
    Text: BD233, BD235, BD237 BD234, BD236, BD238 BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM 1' pL 7.8 B 10.5 10.8 C


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    BD233, BD235, BD237 BD234, BD236, BD238 B0237 GS233 PDF

    BD233

    Abstract: BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR
    Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V C ollector Base Voltage


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    BD233/235/237 BD233 BD235 BD237 BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: _ y \ _ BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs


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    BD233 BD235 BD237 OT-32 BD234, BD236 BD238. PDF

    BD237

    Abstract: Audio amplifier circuits bd238 BD233 BD234 BD235 BD236
    Text: BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs


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    BD233 BD235 BD237 OT-32 BD234, BD236 BD238. BD233 BD235 BD237 Audio amplifier circuits bd238 BD234 PDF