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    BD647 Price and Stock

    Bourns Inc BD647-S

    TRANS NPN DARL 80V 8A TO220
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    DigiKey BD647-S Tube
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    Avnet Americas BD647-S Reel 15,000
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    Avnet Abacus BD647-S 143 Weeks 15,000
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    TT Electronics Power and Hybrid / Semelab Limited BD647

    Darlington Transistor, Npn, 80V, To-220; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:80V Rohs Compliant: Yes |Tt Electronics/semelab BD647
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    Newark BD647 Bulk 1
    • 1 $6.1
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    Philips Semiconductors BD647

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    Bristol Electronics BD647 100
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    Quest Components BD647 61
    • 1 $6
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    ComSIT USA BD647 22,232
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    BD647 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BD647 Bourns NPN SILICON POWER DARLINGTONS Original PDF
    BD647 Comset Semiconductors Silicon NPN Darlington Power Transistors Original PDF
    BD647 Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BD647 Power Innovations NPN SILICON POWER DARLINGTON Original PDF
    BD647 General Electric 8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. Scan PDF
    BD 647 Infineon Technologies TRANS DARLINGTON NPN 80V 8A 3TO-220AB Scan PDF
    BD647 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD647 Mullard Quick Reference Guide 1977/78 Scan PDF
    BD647 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD647 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD647 Unknown Cross Reference Datasheet Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD647 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    BD647 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bd648

    Abstract: bd652
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 bd648 bd652

    BD647

    Abstract: BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD650 BD652
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 BD647 BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD652

    BD646

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD646

    BD649

    Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 BD649 BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD646 BD648

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    BD648

    Abstract: transistor bd648 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor bd647 BD647 B2750
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD647


    Original     		PDF BD647 -12mA -50mA BD648 transistor bd648 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor bd647 BD647 B2750

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    transistor bd647

    Abstract: BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD650 BD652
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 transistor bd647 BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD652

    transistor bd650

    Abstract: BD650 transistor bd648 BD648 BD646 BD645 BD647 BD649 BD651 BD652
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 transistor bd650 BD650 transistor bd648 BD648 BD646 BD645 BD647 BD651 BD652

    BD648

    Abstract: BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD649 BD650 BD651
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD648 BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD650 BD651

    BD648

    Abstract: BD650 BD646 BD645 BD647 BD649 BD651 BD652 transistor bd650
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD648 BD650 BD646 BD645 BD647 BD651 BD652 transistor bd650

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    BD652

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD652

    BD649

    Abstract: BD647 TL 2262 BD64S 00m0
    Text: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers


    OCR Scan     		PDF BD643, BD645, BD647, BD649 TQ-220AB BD649 BD647 TL 2262 BD64S 00m0

    b0652

    Abstract: BD648 BD652 bd650
    Text: BD646, BD648, BOSSO, BD652 PNP SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations Limited. UK_ MAY 1993-REVISED MARCH 1997 • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature


    OCR Scan     		PDF BD646, BD648, BD652 1993-REVISED BD645, BD647, BD649 BD651 O-220 BDS46 b0652 BD648 bd650

    Untitled

    Abstract: No abstract text available
    Text: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.


    OCR Scan     		PDF BD644F BD648F; BD652F 711005b OT186 BD643F, BD645F, BD647F, BD649F BD651F.

    Untitled

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature


    OCR Scan     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 T0-220 BD646

    transistor bd650

    Abstract: b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647 BD649
    Text: TBANSYS BD646, BD648, BD650, BD652 pnp silic o n p o w e r d a rlin g to n s mm fUCTROMICS LIMITED TO-220 PACKAGE TOP VIEW • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature B C • 8 A Continuous Collector Current


    OCR Scan     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-22C) BD646 transistor bd650 b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647

    B0647

    Abstract: B0645 bd649 TAG 064
    Text: BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited, 1893 - REVISED M ARCH 1997 • Designed for Complementary Use with BD646, BD648, BD650 and BD652 • 62.5 W at 25°C Case Temperature


    OCR Scan     		PDF BD647, BD649, BD651 DARUNG70NS BD646, BD648, BD650 BD652 O-220 BD645 B0647 B0645 bd649 TAG 064

    transistor BD6

    Abstract: bd645 transistor BD643 H 649 A transistor
    Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


    OCR Scan     		PDF BD643; BD645; BD647; BD649; BD651 7110fi2b BD644, BD646, BD648, BD650 transistor BD6 bd645 transistor BD643 H 649 A transistor

    BD645

    Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
    Text: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts


    OCR Scan     		PDF BD643, BD645, BD647, BD649 O-22QAB RCA-BD643, BD649 1500b BD645 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors

    Untitled

    Abstract: No abstract text available
    Text: J BD644F; 646F BD648F;650F BD652F V SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA


    OCR Scan     		PDF BD644F; BD648F BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F OT186.

    BDX334

    Abstract: bdy37a BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799
    Text: 0 2 5 8 3 5 4 A0VANCED SEMICONDUCTOR SILICON - T B 3 ADVANCED P d @ To=25°C DEVICE TYPE NO. BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799 ËD800 BD801 BD802 BD895 ËD895A BD897 BD897A BD899 BD899A BD901 BDX10 BDX13 &DX33 BDX33A


    OCR Scan     		PDF DB5a35M 0QDD053 BD645 BD647 BD649 BD795 T0220 T0220 BDX334 bdy37a BD796 BD797 BD798 BD799

    652f

    Abstract: J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F BD648F BD649F
    Text: BD644F; 646F BD648F;650F BD652F J PHILIPS INTERNATIONAL 5bE » 711005b 0042^54 bOb M P H I N T-33-3J SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope w ith an electrically insulated m ounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.


    OCR Scan     		PDF BD644F; BD648F BD652F 711002b OT186 BD643F, BD645F, BD647F, BD649F BD651F. 652f J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F