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    BD649 Price and Stock

    Bourns Inc BD649-S

    TRANS NPN DARL 100V 8A TO220
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    Avnet Americas BD649-S Reel 15,000
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    Avnet Abacus BD649-S 143 Weeks 15,000
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    SEI Stackpole Electronics Inc RNF14FBD649R

    RES 649 OHM 1% 1/4W AXIAL
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    DigiKey RNF14FBD649R Bulk 1,000
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    Avnet Americas RNF14FBD649R Bulk 16 Weeks 1,000
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    Mouser Electronics RNF14FBD649R
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    NAC RNF14FBD649R 1,000
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    SEI Stackpole Electronics Inc RNF12FBD649K

    RES 649K OHM 1% 1/2W AXIAL
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    DigiKey RNF12FBD649K Bulk 1,000
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    Avnet Americas RNF12FBD649K Bulk 18 Weeks 1,000
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    Mouser Electronics RNF12FBD649K
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    NAC RNF12FBD649K 1,000
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    SEI Stackpole Electronics Inc RNF12FBD649R

    RES 649 OHM 1% 1/2W AXIAL
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    DigiKey RNF12FBD649R Bulk 1,000
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    Avnet Americas RNF12FBD649R Bulk 16 Weeks 1,000
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    Mouser Electronics RNF12FBD649R
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    NAC RNF12FBD649R 1,000
    • 1 -
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    • 1000 $0.083
    • 10000 $0.071
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    SEI Stackpole Electronics Inc RNF14FBD649K

    RES 649K OHM 1% 1/4W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RNF14FBD649K Bulk 1,000
    • 1 -
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    • 1000 $0.02818
    • 10000 $0.02818
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    Avnet Americas RNF14FBD649K Bulk 16 Weeks 1,000
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    Mouser Electronics RNF14FBD649K
    • 1 -
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    • 10000 $0.021
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    NAC RNF14FBD649K 1,000
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    • 1000 $0.052
    • 10000 $0.044
    		Buy Now
    Find more BD649 price and stock on Findchips.com

    BD649 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BD649 Bourns NPN SILICON POWER DARLINGTONS Original PDF
    BD649 Comset Semiconductors Silicon NPN Darlington Power Transistors Original PDF
    BD649 Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BD649 Power Innovations NPN SILICON POWER DARLINGTON Original PDF
    BD649 General Electric 8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. Scan PDF
    BD 649 Infineon Technologies TRANS DARLINGTON NPN 100V 8A 3TO-220AB Scan PDF
    BD649 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD649 Mullard Quick Reference Guide 1977/78 Scan PDF
    BD649 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD649 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD649 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD649 Unknown Transistor Replacements Scan PDF
    BD649 Unknown Transistor Replacements Scan PDF
    BD649 Unknown Cross Reference Datasheet Scan PDF
    BD649 Unknown Transistor Replacements Scan PDF
    BD649 Unknown Transistor Replacements Scan PDF
    BD649 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD649 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD649 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD649 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BD649 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bd648

    Abstract: bd652
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 bd648 bd652

    BD647

    Abstract: BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD650 BD652
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 BD647 BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD652

    BD646

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD646

    BD649

    Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 BD649 BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD646 BD648

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    Untitled

    Abstract: No abstract text available
    Text: BD649F Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.750


    Original     		PDF BD649F Freq100M

    Untitled

    Abstract: No abstract text available
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645

    transistor bd647

    Abstract: BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD650 BD652
    Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 transistor bd647 BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD652

    transistor bd650

    Abstract: BD650 transistor bd648 BD648 BD646 BD645 BD647 BD649 BD651 BD652
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 transistor bd650 BD650 transistor bd648 BD648 BD646 BD645 BD647 BD651 BD652

    BD648

    Abstract: BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD649 BD650 BD651
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD648 BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD650 BD651

    BOW93C

    Abstract: box33c BOV65B B0701 b0651 BOT63B BOX83C BOX63B BOW83C bow530
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) Po Max (W) hFE Min fT Max (HZl leBO Max (A) t, tf Max (8) Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 2501196 B0267B B0267B 2501230 BD649


    Original     		PDF B0267B BD649 5G5132 B0701 TIP132 MJE6045 O-218 O-247var BOW93C box33c BOV65B b0651 BOT63B BOX83C BOX63B BOW83C bow530

    BD649

    Abstract: BD647 TL 2262 BD64S 00m0
    Text: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers


    OCR Scan     		PDF BD643, BD645, BD647, BD649 TQ-220AB BD649 BD647 TL 2262 BD64S 00m0

    Untitled

    Abstract: No abstract text available
    Text: 3 4 DRAWING TH IS MADE DRAWING IN 15 THIRD ANGLE UNPUBLISHED COPYRIGHT RELEASED 19 2 PROJECTION BY ANP FOR PUBLICATION I N CORPORAT ED. ALL INTERNATIONAL RIGHTS D I ST LOC 19 BD RESERVED. R E V I 5 I ON' 48 ZONE DESCRIP TIO N LTR D APPD 9-18-89 PER ECN BD6498


    OCR Scan     		PDF BD3360 BD6498 amp33743 /home/amp33743/edmmod HD-20 JUN-00

    B0643

    Abstract: d 17275 BD649C
    Text: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts


    OCR Scan     		PDF BD643, BD645, BD647, BD649 O-220AB RCA-BD643, BD649 1500b B0643 d 17275 BD649C

    Untitled

    Abstract: No abstract text available
    Text: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.


    OCR Scan     		PDF BD644F BD648F; BD652F 711005b OT186 BD643F, BD645F, BD647F, BD649F BD651F.

    bd643f

    Abstract: No abstract text available
    Text: BD643F; 645F; 647F BD649F; 651F y SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistorsinaSOT186 envelope with an electrically insulated mounting base. PNP complements are BD644F, BD646F, BD648F, BD650F and BD652F. QUICK R E F E R E N C E D A T A


    OCR Scan     		PDF BD643F; BD649F; transistorsinaSOT186 BD644F, BD646F, BD648F, BD650F BD652F. BD643F bd643f

    Untitled

    Abstract: No abstract text available
    Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature


    OCR Scan     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 T0-220 BD646

    MAX2XX

    Abstract: BD645 BD646 BD648 BD649 BD650 BD651 BD652 sb 649 a 2 sb 647
    Text: BD645; 647 BD649; 651 SILICON DARLINGTON POWER TRANSISTORS N-P-N e p ita x ia l base tran sistors in m o n o lith ic D a rlin g to n c irc u it fo r audio o u tp u t stages and general a m p lifie r and sw itch in g a p p lica tio n s; T 0 -2 2 0 plastic envelope. P-N-P co m p le m en ts are B D 646, B D 648,


    OCR Scan     		PDF BD645; BD649; O-220 BD646, BD648, BD650 BD652. BD645 MAX2XX BD646 BD648 BD649 BD651 BD652 sb 649 a 2 sb 647

    transistor bd650

    Abstract: b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647 BD649
    Text: TBANSYS BD646, BD648, BD650, BD652 pnp silic o n p o w e r d a rlin g to n s mm fUCTROMICS LIMITED TO-220 PACKAGE TOP VIEW • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature B C • 8 A Continuous Collector Current


    OCR Scan     		PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-22C) BD646 transistor bd650 b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647

    B0647

    Abstract: B0645 bd649 TAG 064
    Text: BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited, 1893 - REVISED M ARCH 1997 • Designed for Complementary Use with BD646, BD648, BD650 and BD652 • 62.5 W at 25°C Case Temperature


    OCR Scan     		PDF BD647, BD649, BD651 DARUNG70NS BD646, BD648, BD650 BD652 O-220 BD645 B0647 B0645 bd649 TAG 064

    transistor BD6

    Abstract: bd645 transistor BD643 H 649 A transistor
    Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


    OCR Scan     		PDF BD643; BD645; BD647; BD649; BD651 7110fi2b BD644, BD646, BD648, BD650 transistor BD6 bd645 transistor BD643 H 649 A transistor

    BD646F

    Abstract: BD649F BD650F BD643F BD648F BD652F 651F
    Text: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.


    OCR Scan     		PDF BD643F BD649F: 65-1F_ 711002b OT186 areBD644F, BD646F, BD648F, BD650F BD652F. BD646F BD649F BD648F BD652F 651F

    BD645

    Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
    Text: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts


    OCR Scan     		PDF BD643, BD645, BD647, BD649 O-22QAB RCA-BD643, BD649 1500b BD645 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors

    Untitled

    Abstract: No abstract text available
    Text: J BD644F; 646F BD648F;650F BD652F V SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA


    OCR Scan     		PDF BD644F; BD648F BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F OT186.