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    BD897 Price and Stock

    Bourns Inc BD897-S

    TRANS NPN DARL 60V 8A TO220
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    DigiKey BD897-S Tube
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    Avnet Americas BD897-S Reel 15,000
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    Avnet Abacus BD897-S 143 Weeks 15,000
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    Bourns Inc BD897A-S

    TRANS NPN DARL 60V 8A TO220
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    DigiKey BD897A-S Tube
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    Avnet Americas BD897A-S Reel 15,000
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    Avnet Abacus BD897A-S 143 Weeks 15,000
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    Others BD897

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    Chip 1 Exchange BD897 500
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    BD897 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD897 Bourns NPN SILICON POWER DARLINGTONS Original PDF
    BD897 Power Innovations NPN SILICON POWER DARLINGTON Original PDF
    BD897 General Electric 8 A N-P-N darlington power transistor. 60 V. 70 W. Scan PDF
    BD897 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD897 Motorola European Master Selection Guide 1986 Scan PDF
    BD897 Unknown Cross Reference Datasheet Scan PDF
    BD897 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD897 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD897 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD897 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD897 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD897 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    BD897 National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF
    BD897 Texas Instruments 60 V, 8 A, 70 W, NPN silicon power darlington Scan PDF
    BD897A Bourns NPN SILICON POWER DARLINGTONS Original PDF
    BD897A Power Innovations NPN SILICON POWER DARLINGTON Original PDF
    BD897A General Electric 8 A N-P-N darlington power transistor. 60 V. 70 W. Scan PDF
    BD897A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD897A Motorola European Master Selection Guide 1986 Scan PDF
    BD897A Unknown Cross Reference Datasheet Scan PDF

    BD897 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD895A

    Abstract: BD896A BD897A BD898A BD899A BD900A
    Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW B 1 C


    Original     		PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A O-220 BD897A BD895A BD895A BD896A BD897A BD899A BD900A

    BD895A

    Abstract: BD896A BD897A BD898A BD899A BD900A
    Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW B 1 C


    Original     		PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A O-220 BD897A BD895A BD895A BD896A BD897A BD899A BD900A

    transistor BD901

    Abstract: BD897 BD901 BD895 BD896 BD898 BD899 BD900 BD902 case BD901
    Text: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD895, BD897, BD899, BD901 BD896, BD898, BD900 BD902 O-220 BD899 transistor BD901 BD897 BD901 BD895 BD896 BD898 BD899 BD902 case BD901

    BD902

    Abstract: BD901 BD895 BD896 BD897 BD898 BD899 BD900
    Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD900 BD902 BD901 BD895 BD896 BD897 BD898 BD900

    BD901

    Abstract: transistor BD901 BD897 BD898 BD899 BD900 BD902 BD895 BD896
    Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895, BD897, BD899 and BD901 TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature


    Original     		PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD896 BD901 transistor BD901 BD897 BD898 BD900 BD902 BD895 BD896

    BD895A

    Abstract: BD896A BD897A BD898A BD899A BD900A
    Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896A, BD898A and BD900A TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature


    Original     		PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A O-220 BD895A BD897A BD895A BD896A BD897A BD899A BD900A

    Untitled

    Abstract: No abstract text available
    Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but


    Original     		PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD896

    Untitled

    Abstract: No abstract text available
    Text: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but


    Original     		PDF BD895, BD897, BD899, BD901 BD896, BD898, BD900 BD902 O-220 BD895

    BD897

    Abstract: No abstract text available
    Text: Power Transistors www.jmnic.com BD897 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER 60 V VCEO Collector to emitter voltage


    Original     		PDF BD897 O-220 O-220 BD897

    BD901

    Abstract: BD895 BD896 BD897 BD898 BD899 BD900 BD902
    Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD900 BD901 BD895 BD896 BD897 BD898 BD900 BD902

    7508A

    Abstract: No abstract text available
    Text: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and


    Original     		PDF BD895, BD897, BD899, BD901 BD896, BD898, BD900 BD902 O-220 BD895 7508A

    Untitled

    Abstract: No abstract text available
    Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but


    Original     		PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A O-220 BD897A BD895A

    Untitled

    Abstract: No abstract text available
    Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and


    Original     		PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD896

    D897

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT NAME 1ch DC／DC PWM Converter IC built in synchronous rectifier TYPE BD8972MUV FEATURES ・Output Voltage：3.0Ｖ, Output Current：1.0A ・Fast Transient Response ○ABSOLUTE MAXIMUM RATING（Ta=25℃）


    Original     		PDF BD8972MUV R1010A D897

    Untitled

    Abstract: No abstract text available
    Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW


    Original     		PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD896

    Untitled

    Abstract: No abstract text available
    Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896A, BD898A and BD900A T 0 -2 2 0 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature


    OCR Scan     		PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A BD895A BD897A

    C03GE

    Abstract: BD901 BD597 BD897 BD897A BD899 BD895 BD895A BD896 BD899A
    Text: 01 G E SOLID STATE 3875081 G E SOLID STATE m o 1~E 17277 _ File Number « 1240 TI 3Ö7SDÖ1 0017577 3 |~~ D uanin gto n Power Transistors BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 8-Ampere N-P-N Darlington Power Transistors


    OCR Scan     		PDF 0Q17577 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, C03GE BD901 BD597 BD897 BD897A BD899 BD895 BD895A BD896 BD899A

    BD901

    Abstract: BD897 case BD901 1N914 BD895 BD895A BD897A BD899 BD899A D03bt
    Text: TEXAS I N S T R -COPTO* b5 D eT | ODBbS'i'i 62C 36599 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 • 70 W at 2 5 °C Case Temperature T -3 3 -2 9 • 8 A Continuous Collector Current


    OCR Scan     		PDF BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 TQ-220AB BD895 BD897 case BD901 1N914 BD897A BD899 BD899A D03bt

    Untitled

    Abstract: No abstract text available
    Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895, BD897, BD899 and BD901 T 0 -2 2 0 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature


    OCR Scan     		PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 BD896 BD898

    Untitled

    Abstract: No abstract text available
    Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations limited. UK AUGUST 1 9 9 3 -REVISED MARCH 1997 Designed fo r Com plem entary Use w ith BD896A, B0898A and BDSOOA TO-220 PACKAGE TOP VIEW 70 W a t 25°C Case Temperature


    OCR Scan     		PDF BD895A, BD897A, BD899A BD896A, B0898A O-220 BD895A BD897A BD899A

    B0897

    Abstract: D895 BD901 case BD901
    Text: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright t> 1997. Power Innovations Limited. UK_ • Designed for Complementary Use with BD896, B0898, BD900 and BD902 • 70 W at 2S°C Case Temperature • 8 A Continuous Collector Current •


    OCR Scan     		PDF BD895, BD897, BD899, BD901 BD896, B0898, BD900 BD902 O-220 BD895 B0897 D895 case BD901

    D895

    Abstract: transistor Bd 699 transistor BD901 BD695A BD895 BD897A D-897 bd897 motorola
    Text: MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | BD895, BD895A BD897, BD897A BD899, BD899A BD901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC POWER SILICON NPN DARLINGTONS DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS . for use as output devices in complementary general-purpose


    OCR Scan     		PDF GGfl47bS BD895, BD895A BD897, BD897A BD899, BD899A BD901 BD896, D895 transistor Bd 699 transistor BD901 BD695A BD895 D-897 bd897 motorola

    case BD901

    Abstract: BD901 BD895 BD899
    Text: BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 File Number 1240 8-Ampere N-P-N Darlington Power Transistors 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features:


    OCR Scan     		PDF BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, case BD901 BD901 BD895 BD899

    BDX334

    Abstract: bdy37a BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799
    Text: 0 2 5 8 3 5 4 A0VANCED SEMICONDUCTOR SILICON - T B 3 ADVANCED P d @ To=25°C DEVICE TYPE NO. BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799 ËD800 BD801 BD802 BD895 ËD895A BD897 BD897A BD899 BD899A BD901 BDX10 BDX13 &DX33 BDX33A


    OCR Scan     		PDF DB5a35M 0QDD053 BD645 BD647 BD649 BD795 T0220 T0220 BDX334 bdy37a BD796 BD797 BD798 BD799