rogers
Abstract: No abstract text available
Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210451
PTF210451
rogers
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210451
Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210451
PTF210451
210451
smd marking f2
smd transistor marking l6
BDS31314
PTF210451E
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Transistor 4733
Abstract: capacitor siemens 4700 35 BDS31314-6-452 CGS C14
Text: PRE-RELEASE PTF 10134* 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched common source N–channel enhancement–mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime
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P4525-ND
PC56106-ND
P220ECT-ND
LL2012-F2N7S
BDS31314-6-452
35VDC
1-877-GOLDMOS
1301-PTF
Transistor 4733
capacitor siemens 4700 35
BDS31314-6-452
CGS C14
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PTF210451E
Abstract: PTF210451F 200B1
Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.
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PTF210451E
PTF210451F
PTF210451E
PTF210451F
45-watt
200B1
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Untitled
Abstract: No abstract text available
Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest
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PTF210451E
PTF210451F
45-watt
PTF210451F*
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10134
Abstract: capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180
Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface
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35VDC
1-877-GOLDMOS
1522-PTF
10134
capacitor siemens 4700 35
BDS31314-6-452
transistor t 2180
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BDS31314
Abstract: PTF210451E PTF210451F
Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest
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PTF210451E
PTF210451F
PTF210451E
PTF210451F
45-watt
PTF210451F*
BDS31314
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Untitled
Abstract: No abstract text available
Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.
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PTF210451E
PTF210451F
45-watt
H-30265-2
PTF210451F*
H-31265-2
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BDS31314-6-452
Abstract: Transistor 4733
Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface
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Original
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PDF
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35VDC
1-877-GOLDMOS
1522-PTF
BDS31314-6-452
Transistor 4733
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