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Bourns Inc BDT60A-S TRANS DARLINGTON NPN 80V 4A 3PIN TO-220 - Tape and Reel (Alt: BDT60A-S)
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BDT60A Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
BDT60A	Bourns	PNP SILICON POWER DARLINGTONS	Original	PDF
BDT60A	Philips Semiconductors	Silicon Darlington Power Transistor	Original	PDF
BDT60A	Power Innovations	PNP SILICON POWER DARLINGTON	Original	PDF
BDT60A	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
BDT60A	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDT60A	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BDT60A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT60A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDT60A	Philips Semiconductors	SILICON DARLINGTON POWER TRANSISTORS	Scan	PDF
BDT60A	Transys Electronics	PNP SILICON POWER DARLINGTONS	Scan	PDF
BDT60A	Transys Electronics	BJT, PNP, Darlington Power Transistor, IC 4A	Scan	PDF
BDT60AF	Philips Semiconductors	Silicon Darlington Power Transistor	Original	PDF
BDT60AF	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT60AF	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

BDT60AF	Philips Semiconductors	SILICON DARLINGTON POWER TRANSISTORS	Scan	PDF
BDT60A-S	Bourns	NPN DARLINGTON 100V 4A	Original	PDF

BDT60A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BDT60 Abstract: BDT60C BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature	Original	BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60 BDT60 BDT60C BDT60A BDT60B BDT61 BDT61A BDT61C	PDF
BDT60C Abstract: BDT61A BDT60 BDT60A BDT60B BDT61 BDT61B BDT61C Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE	Original	BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT60C BDT61A BDT60 BDT60A BDT61 BDT61B BDT61C	PDF
Untitled Abstract: No abstract text available Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and	Original	BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61	PDF
BDT60AF Abstract: BDT60BF BDT60CF BDT60F Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors DESCRIPTION •DC Current Gain -hFE = 750 Min @ IC= -1.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF	Original	BDT60F; BDT60AF -100V BDT60BF; -120V BDT60CF BDT61F/61AF/61BF/61CF BDT60F BDT60BF BDT60AF BDT60BF BDT60CF BDT60F	PDF
Untitled Abstract: No abstract text available Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is currently available, but	Original	BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60	PDF
TCS-11 Abstract: BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE	Original	BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B TCS-11 BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61C	PDF
Untitled Abstract: No abstract text available Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE	Original	BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61	PDF
Untitled Abstract: No abstract text available Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is currently available, but	Original	BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61	PDF
Untitled Abstract: No abstract text available Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and	Original	BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60	PDF
BDT60C Abstract: BDT60 BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE	Original	BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B BDT60C BDT60 BDT60A BDT60B BDT61 BDT61A BDT61C	PDF
sas110 Abstract: 750-AT-1 BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature	Original	BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61 sas110 750-AT-1 BDT60 BDT60A BDT60C BDT61 BDT61A BDT61B BDT61C	PDF
BDT61 Abstract: BDT60C BDT61C BDT60 BDT60A BDT60B BDT61A BDT61B Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE	Original	BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT61 BDT60C BDT61C BDT60 BDT60A BDT61A BDT61B	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF

2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
Untitled Abstract: No abstract text available Text: BDT60F; BDT60AF BDT60BF; BDT60CF _z PHILIPS INTERNATIONAL SbE D • 7110flSb 0043212 77fl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS T~3 PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base.	OCR Scan	BDT60F; BDT60AF BDT60BF; BDT60CF 7110flSb OT186 BDT61F, BDT61AF, BDT61BF BDT61CF.	PDF
BF 331 TRANSISTORS Abstract: bdt60bf Text: BDT60F; BDT60AF BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT 186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.	OCR Scan	BDT60F; BDT60AF BDT60BF; BDT60CF BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60F BF 331 TRANSISTORS bdt60bf	PDF
Untitled Abstract: No abstract text available Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C T0-220 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature	OCR Scan	BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C T0-220 BDT61	PDF
60AF Abstract: BDT60AF BDT60BF BDT60F BDT61AF BDT61BF BDT61CF BDT61F Text: BDT60F; BDT60AF J ^BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.	OCR Scan	BDT60F; BDT60AF BDT60BF; BDT60CM OT186 BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60F 60AF BDT60AF BDT60BF BDT61AF BDT61CF BDT61F	PDF
BDT60AF Abstract: BDT60BF BDT60CF BDT60F BDT61AF BDT61BF BDT61CF BDT61F 0043E Text: BDT60F; BDT60AF BDT60BF; BDT60CF PHILIPS INT ER NA TI ON AL SbE m D 7110 äEb 0043212 SILICON DARLINGTON POWER TRANSISTORS 77 fl M P H I N T~3 J - J / PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electricaliy insulated mounting base.	OCR Scan	BDT60F; BDT60AF BDT60BF; BDT60CF 0043E12 OT186 BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60AF BDT60BF BDT60CF BDT60F BDT61AF BDT61CF BDT61F 0043E	PDF
Untitled Abstract: No abstract text available Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature	OCR Scan	BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C BDT60 BDT60A	PDF
BDT60C ST Abstract: BDT60C Text: BDTBO, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARUNGTONS Copyright 1997, Powet Innovations Limited, UK_ A U G U S T 1993 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C • 50 W at 25°C Case Temperature	OCR Scan	BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C T0-220 BDT60 BDT60A BDT60C ST	PDF
BDT61F Abstract: 61AF BDT61BF BDT60AF BDT60BF BDT60CF BDT60F Text: BDT61F; 61AF BDT61BF; 61CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope w ith an electrically insulated mounting base. They are recommended fo r applications such as audio output stages and general purpose amplifiers.	OCR Scan	BDT61F; BDT61BF; OT186 BDT60F, BDT60AF, BDT60BF BDT60CF. BDT61F GD34b 61AF BDT61BF BDT60AF BDT60CF BDT60F	PDF

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BDT60A Price and Stock

Bourns Inc BDT60A-S

BDT60A Datasheets (16)

BDT60A Datasheets Context Search

BDT60

BDT60C

Untitled

BDT60AF

Untitled

TCS-11

Untitled

Untitled

Untitled

BDT60C

sas110

BDT61

BUV48I

2N5657 equivalent

2SD669 equivalent

2SC495

Untitled

BF 331 TRANSISTORS

Untitled

60AF

BDT60AF

Untitled

BDT60C ST

BDT61F