BDT64F Search Results

BDT64F Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BDT64F		Philips Semiconductors	Silicon Darlington Power Transistor		Original	PDF
BDT64F		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BDT64F		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BDT64F		Philips Semiconductors	SILICON DARLINGTON POWER TRANSISTORS		Scan	PDF
BDT64F		Philips Semiconductors	Silicon Darlington Power Transistors		Scan	PDF

BDT64F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BDT65AF Abstract: Audio Output Transistor Amplifier BDT65A BDT65BF npn DARLINGTON 10A BDT65CF BDT65F BDT65C NPN high power transistor Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000 Min @ IC= 5A ·Complement to Type BDT64F/AF/BF/CF APPLICATIONS ·Designed for audio output stages and general purpose	Original	BDT64F/AF/BF/CF BDT65F BDT65BF BDT65AF BDT65CF BDT65AF Audio Output Transistor Amplifier BDT65A BDT65BF npn DARLINGTON 10A BDT65CF BDT65F BDT65C NPN high power transistor	PDF
BDT64AF Abstract: BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F r64A 004887 Text: BDT64F; BDT64AF BDT64BF: BDT64CF PHILIPS INTERNATIONAL SbE T> • VllDflEti 00432Ö2 CHI ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SO T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.	OCR Scan	BDT64F; BDT64AF BDT64BF: BDT64CF OT186 BDT65F, BDT65AF, BDT65BF BDT65CF. BDT64F! BDT64AF BDT64BF BDT64CF BDT64F BDT65AF BDT65CF BDT65F r64A 004887	PDF
BDT64C Abstract: BOT64 BOT64B Text: BDT64F; BDT64AF BDT64BF; BDT64CF PHILIPS INTERNATIONAL SbE D • VllDflEb 0043202 OTl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.	OCR Scan	BDT64F; BDT64AF BDT64BF; BDT64CF OT186 BDT65F, BDT65AF, BDT65BF BDT65CF. BDT64F BDT64C BOT64 BOT64B	PDF
bot64 Abstract: No abstract text available Text: BDT64F; BDT64AF BDT64BF; BDT64CF J SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S 0 T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.	OCR Scan	BDT64F; BDT64AF BDT64BF; BDT64CF BDT65F, BDT65AF, BDT65CF. BDT64F 003473b bot64	PDF
BDT64AF Abstract: bdt64cr KIA 574 BDT64BF BDT64CF BDT64F BDT65AF BDT65CF BDT65F Text: BDT64F; BDT64AF J BPT64BF; BDT64CF SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S0T186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.	OCR Scan	BDT64F; BDT64AF BDT64BF; BDT64CF OT186 BDT65F, BDT65AF, BDT658F BDT65CF. BDT64F BDT64AF bdt64cr KIA 574 BDT64BF BDT64CF BDT65AF BDT65CF BDT65F	PDF
bot64 Abstract: BDT64A BDT64AF BDT64BF BDT64C BDT64CF BDT64F Text: BDT64F BDT6 11BDT64BF BDT6 Silicon Darlington power transistors Fig. 5 Safe Operating Area; = 25 °C . I Region of permissible DC operation. (II) Permissible extension for repetitive pulse operation. (1) Ptot max anc* Ppeak max lines. (2) Second-breakdown limits.	OCR Scan	BDT64F BDT64A BDT64BF BDT64C 7Z21455 bot64 BDT64A BDT64AF BDT64C BDT64CF	PDF
BOT65C Abstract: 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F Text: BDT65F; BDT65AF bDT65BF; BDT65CF J SILICON DARLINGTON POWER TRANSISTORS NPIM silicon darlington power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio o u tp u t stages and general am plifier and switching applications.	OCR Scan	BDT65F; BDT65AF BDT65BF; BDT65CF BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F OT186. BOT65C 65AF BDT64AF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
Untitled Abstract: No abstract text available Text: J BDT65F; BDT65AF ^BDT65BF; BDT65CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.	OCR Scan	BDT65F; BDT65AF BDT65BF; BDT65CF OT186 BDT64F, BDT64AF, BDT64BF BDT64CF. bbS3T31	PDF
BDT64C Abstract: BDT65 BDT65A BDT64A BDT64 7Z66 BDT64B BDT65B BDT65C Text: n o n - BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic Darlington c irc u it fo r audio o u tp u t stages and general purpose a m p lifie r and switching applications. TO-22C plastic envelope. N-P-N complements are BDT65,	OCR Scan	BDT64; BDT64B; T0-220 BDT65, BDT65A, BDT65B BDT65C. BDT64 BDT64F BDT64AF BDT64C BDT65 BDT65A BDT64A 7Z66 BDT64B BDT65C	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11	PDF