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    onsemi BDV65BG

    TRANS NPN DARL 100V 10A TO247-3
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    DigiKey BDV65BG Tube
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    Avnet Americas BDV65BG Tube 4 Weeks 373
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    Rochester Electronics BDV65BG 2,213 1
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    Flip Electronics BDV65BG 78
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    BDV65BG Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BDV65BG On Semiconductor BDV65 - TRANSISTOR 10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218, PLASTIC, CASE 340D-02, 3 PIN, BIP General Purpose Power Original PDF
    BDV65BG On Semiconductor TRANS DARLINGTON NPN 100V 10A 3TO-218 Original PDF

    BDV65BG Datasheets Context Search

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    bdv64b

    Abstract: BDV64BG transistor packages sot93 BDV65B BDV65BG
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − HFE = 1000 (min.) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B BDV65B/D BDV64BG transistor packages sot93 BDV65BG

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    transistors BDV64B

    Abstract: BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B BDV65B/D transistors BDV64B BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64

    Untitled

    Abstract: No abstract text available
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65Bâ BDV64Bâ BDV65B/D