BDV96 Search Results

BDV96 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
BDV96	Philips Semiconductors	Silicon Epitaxial Base Power Transistors	Original	PDF
BDV96	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
BDV96	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BDV96	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDV96	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BDV96	Unknown	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 10A I(C) \| SOT-93	Scan	PDF
BDV96	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDV96	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BDV96	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDV96	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDV96	Unknown	Transistor Replacements	Scan	PDF
BDV96	Unknown	Transistor Replacements	Scan	PDF
BDV96	Unknown	Cross Reference Datasheet	Scan	PDF
BDV96	Semelab	Bipolar Transistors (CECC and High Rel) & High Energy	Scan	PDF

BDV96 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BDV96 Abstract: BDV94 BDV91 BDV92 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDV92/94/96 DESCRIPTION •Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95	Original	BDV92/94/96 BDV92; BDV94 BDV96 BDV91/93/95 BDV92 BDV96 BDV94 BDV91 BDV92	PDF
2u 62 diode Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20	Original	SDT3208 SDT7140 BDT95 BDT96 2u 62 diode KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent	PDF
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220	PDF
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator	PDF
BD179-10 equivalent Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1	PDF
sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943	PDF

Transistor 2sC1060 Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:	Original	BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59	PDF
MJ11017 equivalent Abstract: BU108 MJ11021 BU326 BU100 MJE3055T Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types	Original	MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T	PDF
BDV96 Abstract: BDV94 BDV93 BDV91 BDV92 BDV95 7Z79018 Text: BDV92 BDV94 BDV96 PHILIPS IN T E R N A T I O N A L SbE 7 1 1 0 a 2 b 0 04341S 53T « P H I N I T> SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDV92 BDV94 BDV96 7110a2b 004341S OT-93 BDV91, BDV93 BDV95. BDV92 BDV96 BDV94 BDV91 BDV95 7Z79018	PDF
BDV96 Abstract: 60n20 BDV95 Text: BDV92 BDV94 BDV96_ _ PHILIPS INTERNATIONAL SbE D • 7110êBb 004341S S3T ■ P H I N T - 3 3 - 2 - 3 , SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended	OCR Scan	BDV92 BDV94 BDV96_ 004341S OT-93 BDV91, BDV93 BDV95. OT-93. BDV96 60n20 BDV95	PDF
BDV91 Abstract: BDV96 BDV92 BDV93 BDV94 BDV95 Text: BDV92 BDV94 BDV96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P e p ita x ia l base p o w e r transistors in th e pla stic S O T -93 envelope. These transistors are intended fo r use in au d io o u tp u t stages and general a m p lifie r and sw itch in g applications.	OCR Scan	BDV92 BDV94 BDV96 OT-93 BDV91, BDV93 BDV95. BDV92 BDV94 BDV91 BDV96 BDV95	PDF
1U105 Abstract: BDV91 BDV93 BDV92 BDV94 BDV95 BDV96 Text: BDV91 BDV93 BDV95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDV92, BDV94 and BDV96.	OCR Scan	BDV91 BDV93 BDV95 OT-93 BDV92, BDV94 BDV96. BDV91 BDV93 1U105 BDV92 BDV95 BDV96	PDF
Untitled Abstract: No abstract text available Text: _/V_ BDV92 BDV94 BDV96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDV92 BDV94 BDV96 OT-93 BDV91, BDV93 BDV95.	PDF
Untitled Abstract: No abstract text available Text: BDV91 BDV93 BDV95 _ J ^ILIP S I N T E R N A T I O N A L 5bE ]> • 7 1 1 Q û 2 b 0 0 4 3 4 0 b 23b M P H I N T - 3 3 - / 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended	OCR Scan	BDV91 BDV93 BDV95 OT-93 BDV92, BDV94 BDV96.	PDF
Untitled Abstract: No abstract text available Text: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100	OCR Scan	fll331fl? GG0G043 BD746 BD750 BD751 BD797 BD798 BD799 T0220	PDF
Untitled Abstract: No abstract text available Text: BDV91 BDV93 BDV95 _y v SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDV91 BDV93 BDV95 OT-93 BDV92, BDV94 BDV96. bbS3T31	PDF

Privacy Settings

BDV96 Search Results

BDV96 Datasheets (14)

BDV96 Datasheets Context Search

BDV96

2u 62 diode

BUV48I

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

"Tektronix 475"

D42C5

mje521 equivalent

2N3055

2N5631 equivalent

BD179-10 equivalent

sec tip41c

Transistor 2sC1060

MJ11017 equivalent

BDV96

BDV96

BDV91

1U105

Untitled

Untitled

Untitled

Untitled