BDW83C EQUIVALENT Search Results

BDW83C EQUIVALENT Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A

BDW83C EQUIVALENT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BDW83C NPN power Darlington transistor Datasheet — production data Features • High current capability ■ Fast switching speed ■ High DC current gain Applications ■ Linear and switching industrial equipment 3 2 1 TO-247 Description The BDW83C is an epitaxial-base NPN power	Original	BDW83C O-247 BDW83C O-247	PDF
ST BDW83C Abstract: BDW83C ST DARLINGTON TRANSISTOR JESD97 Text: BDW83C NPN power Darlington transistor Features • High current capability ■ Fast switching speed ■ High DC current gain Applications ■ Linear and switching industrial equipment 3 2 1 Description TO-247 The BDW83C is an epitaxial-base NPN power monolithic Darlington transistor mounted in	Original	BDW83C O-247 BDW83C O-247 ST BDW83C ST DARLINGTON TRANSISTOR JESD97	PDF
ST BDW83C Abstract: No abstract text available Text: BDW83C NPN power Darlington transistor Datasheet — production data Features • High current capability ■ Fast switching speed ■ High DC current gain s ct Applications ■ u d o Linear and switching industrial equipment 3 Description The BDW83C is an epitaxial-base NPN power	Original	BDW83C BDW83C O-247 O-247 ST BDW83C	PDF
bdw83c Abstract: ST BDW83C Text: BDW83C NPN power Darlington transistor Datasheet — production data Features • High current capability ■ Fast switching speed ■ High DC current gain Applications ■ Linear and switching industrial equipment 3 2 1 TO-247 Description The BDW83C is an epitaxial-base NPN power	Original	BDW83C BDW83C O-247 O-247 ST BDW83C	PDF
TIC106M SCR Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers	Original	O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent	PDF
TIC106D equivalent Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers	Original	O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent	PDF
BUV48A Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35 Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification	Original	APM-PWR/07/2362 APM-PWR/07/2362 BUV48A TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35	PDF
2N3055 TO220 Abstract: BD130 NPN Transistor BD241 3221 3900 2SA49 bipolar transistor td tr ts tf MJE350 equivalent SE9302 MJE2482 2SC1419 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP29B TIP29C PNP TIP30B TIP30C Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	TIP29B TIP30B TIP29C TIP30C TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2N3055 TO220 BD130 NPN Transistor BD241 3221 3900 2SA49 bipolar transistor td tr ts tf MJE350 equivalent SE9302 MJE2482 2SC1419	PDF
2SA1046 Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and	Original	2N6547 CASE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA1046 TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547	PDF
mj15003 equivalent Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —	Original	MJ15003 MJ15004 MJ15003* MJ15004* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A mj15003 equivalent 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 BU326 BU100	PDF
2SC2246 Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,	Original	2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 TIP73B TIP74 TIP74A TIP74B 2SC2246 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134	PDF
transistor 2SA1046 Abstract: 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP33B* TIP33C PNP TIP34B* TIP34C Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V	Original	TIP33B* TIP33C TIP34B* TIP34C TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A transistor 2SA1046 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent	PDF
BU108 Abstract: 2SA1046 BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage	Original	2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100	PDF
BU108 Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD180 BD179 BD180 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631	PDF

2SA1046 Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.	Original	2N6251 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SA1046 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936	PDF
BUS48AP Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10	PDF
MJ2955 replacement Abstract: BU108 2SA1046 MJE172 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in	Original	2N5038* 2N5039 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ2955 replacement BU108 2SA1046 MJE172 BU326 BU100	PDF
BU108 Abstract: BDT3 2SC1943 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching	Original	MJE8503A* MJE8503A WATT32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 BDT3 2SC1943 2SC1419 BU326 BU100	PDF
TRANSISTOR BC 208 Abstract: 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40 – 160 @ IC = 20 mAdc	Original	MJE3439 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TRANSISTOR BC 208 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100	PDF
MJ4502 EQUIVALENT Abstract: BU108 BU806 Complement BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A	Original	MJ4502 MJ802 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ4502 EQUIVALENT BU108 BU806 Complement BDX54 BU326 BU100	PDF
bd249c equivalent Abstract: MJ15003 300 watts amplifier BU108 mje13009 equivalent BDX54 bd139 equivalent transistor Motorola case 77 tip122 D-PAK package 2SB56 BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5730 MJE5731 MJE5731A High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • • • • 1.0 AMPERE	Original	TIP47 TIP50 MJE5730 MJE5731 MJE5731A TIP73B TIP74 TIP74A TIP74B TIP75 bd249c equivalent MJ15003 300 watts amplifier BU108 mje13009 equivalent BDX54 bd139 equivalent transistor Motorola case 77 tip122 D-PAK package 2SB56 BU326	PDF
BU108 Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design	Original	MJE18002D2 MJE18002D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100	PDF
equivalent transistor TIP3055 Abstract: BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 PNP TIP2955 Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE sat = 1.1 Vdc (Max) @ IC = 4.0 Adc	Original	TIP3055 TIP2955 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C equivalent transistor TIP3055 BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237	PDF
2SC1943 Abstract: 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices	Original	MJ15011 MJ15012 MJ15011* MJ15012* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC1943 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341	PDF

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BDW83C EQUIVALENT Search Results

BDW83C EQUIVALENT Result Highlights (5)

BDW83C EQUIVALENT Datasheets Context Search

Untitled

ST BDW83C

ST BDW83C

bdw83c

TIC106M SCR

TIC106D equivalent

BUV48A

2N3055 TO220

2SA1046

mj15003 equivalent

2SC2246

transistor 2SA1046

BU108

BU108

2SA1046

BUS48AP

MJ2955 replacement

BU108

TRANSISTOR BC 208

MJ4502 EQUIVALENT

bd249c equivalent

BU108

equivalent transistor TIP3055

2SC1943