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    BDY46 Search Results

    BDY46 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY46 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=15 / Hfe=20min / fT(Hz)=13M / Pwr(W)=95 Original PDF
    BDY46 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDY46 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY46 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY46 Unknown Transistor Replacements Scan PDF
    BDY46 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY46 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY46 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY46 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY46 Philips Components Philips Data Book Scan Scan PDF
    BDY46 Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BDY46 Telefunken Electronic Power Transistors 1977/78 Scan PDF

    BDY46 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDY46

    Abstract: No abstract text available
    Text: BDY46 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY46 O204AA) 31-Jul-02 BDY46

    transistor tl 430 c

    Abstract: No abstract text available
    Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =


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    PDF BDY46 transistor tl 430 c

    Untitled

    Abstract: No abstract text available
    Text: BDY46 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY46 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BDY46 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF BDY46 O204AA) 18-Jun-02

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    BDY77

    Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
    Text: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74


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    PDF BDY45 20min DDY46 BDY54 BDY55 BDY56 BDY57 BDY58 BDY77 BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36

    BDV25

    Abstract: BDY25B BDY38 BDY96
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BDV25 BDY25A BDY25B BDY25C BDY26 BDY26B BDY26C BDY27 BDY27AS BDY27B BDY27C BDY27CX BDY28 BDY28B BDY28C BDY29 BDY37 BDY38 BDY39 BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BDY54 BDY55 BDY55 CECC BDY56 BDY56 CECC


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    PDF BDV25 BDY25A BDY25B BDY25C BDY26 BDY26B BDY26C BDY27 BDY27AS BDY27B BDY38 BDY96

    BD NPN transistors 177

    Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42
    Text: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15


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    PDF BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BD NPN transistors 177 B0186 BD139 s3 npn BD 440 NPN transistors aot 128 B0165 B0180

    BUV93

    Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
    Text: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated


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    PDF OOOSb43 -Wt--214- BUV93 TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


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    PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BDY11

    Abstract: BDY16 BDY77 BDY61 BDY47 BDY24 BDY29 BDY37 BDY12 BDY13
    Text: SEMELAB LTD B DY11 B DY12 BDY13 BDY16 BDY20 SC REEN HI-REL HI-REL HI-REL SC REEN NPN PNP NPN NPN N PN BDY23 BDY24 BDY25 BDY26 B DY27 SCREEN SC REEN SCREEN HI-REL HI-REL NPN NPN N PN N PN NPN BDY28 B DY29 B DY37 BDY38 BDY39 HI-REL HI-REL S C REEN S C REEN SC REEN


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    PDF BDY11 BDY12 BDY13 BDY16 BDY20 BDY23 BDY24 BDY25 BDY26 BDY27 BDY77 BDY61 BDY47 BDY29 BDY37

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367