BDY56
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BDY56 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·LF large signal power amplification. PINNING See Fig.2 PIN DESCRIPTION 1 Base
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BDY56
BDY56
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BDY56
Abstract: VCE-150 BDY55 Comset
Text: BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current
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BDY55
BDY56
BDY56
VCE-150
BDY55
Comset
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Untitled
Abstract: No abstract text available
Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY56 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage: VCE<sat)= 1.1 V(Max)@ lc = 4A
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BDY56
10MHz
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BDY56
Abstract: BDY55
Text: NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current
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BDY55
BDY56
BDY56
BDY55
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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bdy56
Abstract: No abstract text available
Text: File Num ber 1215 BDY55, BDY56 HARRIS SEMICOND SECTOR 5bE J> m M3D2271 GQ4D7Q3 Oflb HAS High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications Features: • Maximum operating area curves for dc and pulse operation
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BDY55,
BDY56
M3D2271
92LS-I464
bdy56
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RCA-BDY55
Abstract: BDY56 RCA 17564 BDY55
Text: G E S OL I» ST ATE 3875081 DE |3fl7SDfll 0 D 1 7 S b 4 b QÌ G E SOLID STATE 01E 17564 D -Pro Electron Power Transistors File Number 1215 BDY55, BDY56 High-Current, High-Power, High-Speed
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DD175L
BDY55,
BDY56
RCA-BDY55
BDY56
3Z249RI
92LS-U6Â
92LS-M6SR2
RCA 17564
BDY55
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J BDY56
Abstract: bdy55 BDY56
Text: F ile N u m b e r 1215 BDY55, BDY56 High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors Devices fo r S w itch in g and A m p lifie r C irc u its in In d u s tria l and C o m m ercial A p p lic a tio n s Features: • M aximum operating area curves for dc and pulse operation
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BDY55,
BDY56
RCA-BDY55
BDY56
92LS-I464
92LS-I46SR?
32249R
J BDY56
bdy55
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bdy56
Abstract: 92CS-32247 92CS-27516 J BDY56
Text: G E SO L I D ST AT E ÏÏÏ DE |3fl7SDfll 0 D 1 7 S b 4 b G E S O L I D STATE 01E 17564 q 7^ * 3 ' / -Pro Electron Power Transistors 3875081 File Number
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BDY55,
BDY56
RCA-BDY55
BDY56
32249RI
92CS-32247
92CS-27516
J BDY56
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ISKRA
Abstract: TIP 2n3055 iskra by 325 BU208A BDX20 TIP NPN BU134 bdx18 me BDY56 2N3055
Text: ISKRA ELECTRONICS INC SSE D • M8Í3M77 DODDUM 1 ■ - T - 93 -/5 " T - i 3 -¡3 Silicijevi mocnostni transistorji Power silicon transistors Tip/Type Polariteta Polarity Mcbo • Uceo l9op , ^tot hpE prl/at fT UcEsat A (MHz) (V) 15-120 2 10 0,6 *c . <V)
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BDY24
BDY25
BDY74
2N3442
2N4348
2N3055
BDY56
2N3773
2N3772
BUX12
ISKRA
TIP 2n3055
iskra by 325
BU208A
BDX20
TIP NPN
BU134
bdx18 me
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BDX334
Abstract: bdy37a BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799
Text: 0 2 5 8 3 5 4 A0VANCED SEMICONDUCTOR SILICON - T B 3 ADVANCED P d @ To=25°C DEVICE TYPE NO. BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799 ËD800 BD801 BD802 BD895 ËD895A BD897 BD897A BD899 BD899A BD901 BDX10 BDX13 &DX33 BDX33A
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DB5a35M
0QDD053
BD645
BD647
BD649
BD795
T0220
T0220
BDX334
bdy37a
BD796
BD797
BD798
BD799
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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BD135
BD136
BD137
BD138
BD139
BD140
BD142
BD144
BD157
BD158
JE350
je180
MJ13004
TP33C
BD325
JE172
BDX48
JE340
bd160
BUT55
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
B0411
B0733
THD200F1
dk52
2SC4977
2N5415 REPLACEMENT
TIP 2n3055
BD68D
SGS-Thomson cross reference
BUX37 THOMSON
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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WK16412
Abstract: wk16414 KT201 IRS 8342 WK16413 LQ470 LQ410 1PP75 KC639 KT728
Text: TESLA ELEKTRONICKE SOUCASTKiT KO N CERN R O ZN O V nO/iynpOBOÆHMKOBbie npn6opbi A H o n o ro B b ie M H T e rp a n b H b ie MMKpOCXeMbl 1 U n c fjp o B b ie M H T e rp a / ib M b ie M U K p O C X e M bl 2 rn ö p k i/ iH b ie M H T e rp a / ib H b ie MMKpOCXeMbl
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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tic 1260 scr texas
Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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