BF 494 TRANSISTOR Search Results

BF 494 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
CA3082	Rochester Electronics LLC	Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	Small Signal Bipolar Transistor
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

BF 494 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJE 280 power transistor Abstract: ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12 Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 3 FEBRUARY 1995	Original	PDF	ZTX1048A 100ms NY11725 MJE 280 power transistor ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12
ztx1056A Abstract: BF600 ztx1056 DSA003763 Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve	Original	PDF	ZTX1056A 100ms ZTX1056A 41E-12 0E-13 0E-10 1E-12 6E-12 800E-12 BF600 ztx1056 DSA003763
tf600 Abstract: IC4a ZTX1051A DSA003762 Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am	Original	PDF	ZTX1051A 100ms NY11725 tf600 IC4a ZTX1051A DSA003762
bf500 Abstract: ZTX1055A 161627 DSA003762 Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve	Original	PDF	ZTX1055A 100ms ZTX1055A 60E-12 0E-13 0E-10 3E-12 6E-12 700E-12 bf500 161627 DSA003762
Untitled Abstract: No abstract text available Text: OBSOLETE - PLEASE USE ZTX855 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance	Original	PDF	ZTX855 ZTX1056A NY11725
ZTX1053A Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12 Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am	Original	PDF	ZTX1053A 100ms NY11725 ZTX1053A BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
TF-450 Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761 Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am	Original	PDF	ZTX1047A 100ms NY11725 TF-450 BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
ZBD849 Abstract: transistor bf 970 Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A MARCH 94 FEATURES * Fast switching	Original	PDF	ZBD849 ZBD849 transistor bf 970
ztx1049a Abstract: DSA003762 Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 JUNE 1995	Original	PDF	ZTX1049A 100ms ztx1049a DSA003762
TF-450 Abstract: FZT1047A transistor BF 257 ZTX1047A bf550 DSA003706 Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1047A ISSUE 1 - AUGUST 1997 FEATURES * * * * * * VCEO = 10V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 44mΩ at 5A	Original	PDF	OT223 FZT1047A OT223 stg16) ZTX1047A TF-450 FZT1047A transistor BF 257 ZTX1047A bf550 DSA003706
TF-450 Abstract: transistor BF 257 FZT1047A DSA003675 fzt10 Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1047A ISSUE 1 - AUGUST 1997 FEATURES * * * * * * VCEO = 10V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 44mΩ at 5A	Original	PDF	OT223 FZT1047A OT223 TF-450 transistor BF 257 FZT1047A DSA003675 fzt10
ic 494 Abstract: ZTX1151A Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1151A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER	Original	PDF	ZTX1151A ic 494 ZTX1151A
bf494 Abstract: bf 494 BF495 Transistors BF 494 BF 494 C bf494 emitter common BP495 Text: BF 494 BF 495 NPN SILICON RF SMALL SIGNAL TRANSISTORS $ \| j V - iììp f j S y CASE T0-92E THE BF494, BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS UP TO 100MHz. CBE BF494 ABSOLUTE MAXIMUM RATINGS BF495 Collector-Base Voltage	OCR Scan	PDF	BF494, BF495 100MHz. T0-92E BF494 300mW 10jiA bf 494 Transistors BF 494 BF 494 C bf494 emitter common BP495
transistors BC 23 Abstract: BF494A transistors BC 557b BF494B BHARAT elek 547B 548B 549B BC547A BF494 Text: BHARAT ELEK/SENICOND DI 47E J> 14353^0 □□□□OOfl 3bT BELI SILICON SMALL SIGNAL DEVICE i r - 3 l- 0 f SILICON SMALL SIGNAL DEVICES QUICK REFERENCE CHART PLASTIC PACKAGES NPNIF/RF TRANSISTORS VCE Si Device No 1. 2. 3. 4. 5. 6. BF 494 BF494A BF494B BF 495	OCR Scan	PDF	r-31-0' BF494 BF494A BF494B BF495C BF495D transistors BC 23 transistors BC 557b BHARAT elek 547B 548B 549B BC547A

TRANSISTOR BFW 11 Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor Text: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec	OCR Scan	PDF	O-237 TRANSISTOR BFW 11 BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor
bfw10 transistor Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor Text: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec	OCR Scan	PDF	O-237 bfw10 transistor pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
transistor bf 198 Abstract: BF198 transistor bf 494 RF Transistor BF198 BF 494 C A495 A-04 Q62702-F354 A0349-3 Text: esc o • asBSbüs üdgmmmid a NPN Silicon RF Transistor SIEM EN S IS IE 6 _ 25C. 0 4 4 4 Ó - - A K T IEN 6ESELLSC H A F - _ _ BF198 T ~ 3 1~ i f for gain-controlled TV IF amplifier stages BF 198 is an NPN silicon planar radio-frequency transistor in TO 92 plastic package	OCR Scan	PDF	23SLDS 0DQ444fcÂ BF198 Q62702-F354 qqq4450 transistor bf 198 BF198 transistor bf 494 RF Transistor BF198 BF 494 C A495 A-04 Q62702-F354 A0349-3
BF173 Abstract: BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor Text: BF 173 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN S ILIC IU M , PLA N A R E P IT A X IA U X The NPN planar epitaxial transistor BF 173 intended for use in L F video amplifiers un controlled stages of television receivers. Le transistor NPN "planar é p ita xia l" BF 173 est	OCR Scan	PDF	BF173 BF173 BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor
a02 Transistor rf Abstract: transistor bf 198 Text: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package	OCR Scan	PDF	a23StiG5 0DG444b BF198 023Sfe QQQ4450 a02 Transistor rf transistor bf 198
transistor 2SC930 Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60 Text: S E M I C O N D U C T O R S INC QTE D \| S l B b b S O G G O Q S ? ^ M \| *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106	OCR Scan	PDF	O-72J O-106 O-72G -26UNF-2A O-48D transistor 2SC930 mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
BFW 10 fet Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254 Text: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE \| bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre max N.F. (MHz)	OCR Scan	PDF	0000fc O-72J O-106 O-72G to-02 melf-002. BFW 10 fet transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *	OCR Scan	PDF	ZTX1055A NY11725 3510Metroplaza,
TF-450 Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching	OCR Scan	PDF	ZTX1047A NY11725 JS70S7Ã TF-450
Untitled Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 1053A ISSUE 3 - JANUARY 1995_ _ FEATURES * V CEO=75V * 3 Am p Continuous Current * 10 A m p Pulse Current * Very Low Saturation Voltage APPLICATIONS * Autom otive Switching Circuits	OCR Scan	PDF	ZTX1053A NY11725

BF 494 TRANSISTOR Search Results

BF 494 TRANSISTOR Result Highlights (5)

BF 494 TRANSISTOR Datasheets Context Search

MJE 280 power transistor

ztx1056A

tf600

bf500

Untitled

ZTX1053A

TF-450

ZBD849

ztx1049a

TF-450

TF-450

ic 494

bf494

transistors BC 23

TRANSISTOR BFW 11

bfw10 transistor

transistor bf 198

BF173

a02 Transistor rf

transistor 2SC930

BFW 10 fet

Untitled

TF-450

Untitled