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    Littelfuse Inc RUSBF110-2

    PTC RESET FUSE 16V 1.1A RADIAL
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    DigiKey RUSBF110-2 Cut Tape 4,966 1
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    RUSBF110-2 Reel 3,000 3,000
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    Ozdisan Elektronik RUSBF110-2
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    Infineon Technologies AG CY9BF116TBGL-G-K5E1

    IC MCU 32BIT 512KB 192LFBGA
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    DigiKey CY9BF116TBGL-G-K5E1 Tray 1,520 1
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    Infineon Technologies AG CY9BF112NPMC-G-JNE2

    IC MCU 32BIT 160KB FLASH 100LQFP
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    DigiKey CY9BF112NPMC-G-JNE2 Tray 900 1
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    Infineon Technologies AG CY9BF114NPMC-G-JNE2

    IC MCU 32BIT 288KB FLASH 100LQFP
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    DigiKey CY9BF114NPMC-G-JNE2 Tray 900 1
    • 1 $9.06
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    Infineon Technologies AG CY9BF118SPMC-GK7FKCGE1

    IC MCU 32BIT 1MB FLASH 144LQFP
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    DigiKey CY9BF118SPMC-GK7FKCGE1 Tray 600 1
    • 1 $15.34
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    EBV Elektronik CY9BF118SPMC-GK7FKCGE1 14 Weeks 600
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    BF11 Datasheets (182)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF110 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BF110 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    BF110 Unknown Vintage Transistor Datasheets Scan PDF
    BF110 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF110 Unknown Cross Reference Datasheet Scan PDF
    BF1100 NXP Semiconductors BF1100 - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100 Philips Semiconductors Dual-Gate MOS-FET Original PDF
    BF1100 Philips Semiconductors Dual-gate MOS-FETs Scan PDF
    BF1100,215 NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BF1100A Seiko Epson Surface Mount Crystal Oscillators Original PDF
    BF1100R NXP Semiconductors BF1100R - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100R Philips Semiconductors Dual-Gate MOS-FET Original PDF
    BF1100R Philips Semiconductors Dual-gate MOS-FETs Scan PDF
    BF1100R,215 NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
    BF1100R,235 NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
    BF1100RT/R NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100RTR Philips Semiconductors Dual-gate MOS-FET Original PDF
    BF1100T/R NXP Semiconductors Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS Original PDF
    BF1100TR Philips Semiconductors Dual-gate MOS-FET Original PDF
    ...

    BF11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are


    Original     		PDF BF1118; BF1118R; BF1118W; BF1118WR BF1118, BF1118R, BF1118W BF1118WR OT143B, OT143R,

    2SC9830

    Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)


    Original     		PDF 205AO 92var 220AB 220AB A220AB OT-89 O-92var OT-89 O-92var 2SC9830 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES BF1102; BF1102R


    Original     		PDF MBD128 BF1102; BF1102R OT363 BF1102 R77/03/pp14

    transistor marking NEP ghz

    Abstract: BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors Product specification BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs FEATURES


    Original     		PDF BF1105; BF1105R; BF1105WR MSB035 BF1105R R77/03/pp15 transistor marking NEP ghz BF1105WR marking code NA BF1105 MGM253 dual-gate

    Untitled

    Abstract: No abstract text available
    Text: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BF1100; BF1100R BF1100

    mosfet K 2865

    Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102R Dual N-channel dual gate MOS-FET Preliminary specification 2000 Jan 06 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102R PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single


    Original     		PDF MBD128 BF1102R 115102/00/02/pp12

    transistor marking NEP ghz

    Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs


    Original     		PDF BF1105; BF1105R; BF1105WR SCA56 117067/00/03/pp16 transistor marking NEP ghz dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate

    "MARKING CODE W1*"

    Abstract: BF1102 BF1102R n-channel dual 3010 marking code W2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES


    Original     		PDF MBD128 BF1102; BF1102R OT363 BF1102 603504/03/pp16 "MARKING CODE W1*" BF1102 BF1102R n-channel dual 3010 marking code W2

    dual-gate

    Abstract: BF1100 BF1100R marking code my
    Text: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BF1100; BF1100R BF1100 dual-gate BF1100R marking code my

    MOSFET 4466

    Abstract: 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single


    Original     		PDF MBD128 BF1102 OT363 125004/00/01/pp12 MOSFET 4466 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook

    BF1101WR

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES PINNING


    Original     		PDF BF1101; BF1101R; BF1101WR MSB035 BF1101R R77/02/pp15 BF1101WR

    BF1118

    Abstract: BF1118R BF1118WR DIODE marking S4 06 MARKING CODE CGK
    Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 1 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are


    Original     		PDF BF1118; BF1118R; BF1118W; BF1118WR BF1118, BF1118R, BF1118W BF1118WR OT143B, OT143R, BF1118 BF1118R DIODE marking S4 06 MARKING CODE CGK

    BF1109

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES PINNING


    Original     		PDF BF1109; BF1109R; BF1109WR MSB035 BF1109R R77/02/pp15 BF1109

    BF1109

    Abstract: BF1109R BF1109WR dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs


    Original     		PDF BF1109; BF1109R; BF1109WR SCA55 117067/00/02/pp16 BF1109 BF1109R BF1109WR dual-gate

    CIC 9102

    Abstract: "RF Switches" Philips MARKING CODE BF1108 BF1108R MBL027 DIODE marking S4 69
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1108; BF1108R Silicon RF switches Product specification Supersedes data of 1999 Aug 19 1999 Nov 18 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R FEATURES • Specially designed for low loss RF switching


    Original     		PDF BF1108; BF1108R MSB014 OT143B) OT143B BF1108) OT143R BF1108R) CIC 9102 "RF Switches" Philips MARKING CODE BF1108 BF1108R MBL027 DIODE marking S4 69

    Untitled

    Abstract: No abstract text available
    Text: Celebrating 10 years contribution to a greener world NXP’s RF switch BF1108 saved a year spending of energy of more than 1 million households. Nijmegen, Netherlands, March 17, 2009 – NXP Semiconductors, the independent semiconductor company founded by Philips, celebrates 10 years of contributing to a greener world enabled by


    Original     		PDF BF1108 BF1108, com/pip/bf1108

    Untitled

    Abstract: No abstract text available
    Text: 1 3 2 5 4 6 7 8 Global Connector Technology Ltd. - BF112: 2.00mm Pitch Socket, Dual Row, Surface Mount, Horizontal Dimensions Contacts A A B 4 4.3 2 6 6.3 4 8 8.3 6 10 10.3 8 12 12.3 10 14 14.3 12 16 16.3 14 18 18.3 16 20 20.3 18 22 22.3 20 24 24.3 22 26 26.3


    Original     		PDF BF112: BF030 BF045 BF050 BF060 BF135

    dual gate fet

    Abstract: PHILIPS MOSFET MARKING dual gate mosfet Dual-Gate Mosfet Dual Gate MOSFET graphs MOSFET marking k2 dual PINNING-SOT363 dual gate mosfet in vhf amplifier "MARKING CODE W2" fet MARKING g2
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips S em ico n d uctors P relim inary sp ecification Dual N-channel dual gate MOS-FET BF1102R FEA TU R E S P IN N IN G -S O T 3 6 3 • T w o low noise gain controlled am plifiers in a single package


    OCR Scan     		PDF BF1102R BF1102R OT363 SC-88 dual gate fet PHILIPS MOSFET MARKING dual gate mosfet Dual-Gate Mosfet Dual Gate MOSFET graphs MOSFET marking k2 dual PINNING-SOT363 dual gate mosfet in vhf amplifier "MARKING CODE W2" fet MARKING g2

    "MARKING CODE MF"

    Abstract: marking ggc BF1100WR marking code mf dual-gate
    Text: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz


    OCR Scan     		PDF BF1100WR OT343R OT343R. 7110fi5b "MARKING CODE MF" marking ggc BF1100WR marking code mf dual-gate

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner T o p view - Transceiver switching.


    OCR Scan     		PDF BF1107; BF1107W MSB003 BF1107) BF1107 BF1107W OT323 OT323

    mosfet K 2865

    Abstract: BF1107 ic sc 6200 passive loopthrough
    Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification


    OCR Scan     		PDF BF1107 115102/00/01/pp8 mosfet K 2865 BF1107 ic sc 6200 passive loopthrough

    BF1100

    Abstract: BF1100R 71hwfc dual-gate
    Text: Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R FEATURES • Specially designed for use at 9 to 12 V supply voltage and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.


    OCR Scan     		PDF BF1100; BF1100R OT143 OT143R OT143. OT143R. 71HWfc, BF1100 BF1100R 71hwfc dual-gate

    MOSFET 4466

    Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES


    OCR Scan     		PDF BF1102 OT363 BF1102 MOSFET 4466 4466 8 pin mosfet pin voltage 4466 mosfet