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    JRH Electronics 805-061-16Z18-4BF815

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    DigiKey 805-061-16Z18-4BF815 1
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    • 100 $1307.7108
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    JRH Electronics 805-061-16NF9-10BF815

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    DigiKey 805-061-16NF9-10BF815 1
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    JRH Electronics 805-061-16M10-13BF815

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    DigiKey 805-061-16M10-13BF815 1
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    JRH Electronics 805-061-16Z19-10BF815

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    DigiKey 805-061-16Z19-10BF815 1
    • 1 $2136.91
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    • 100 $1880.4796
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    JRH Electronics 805-061-16M13-31BF815

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    DigiKey 805-061-16M13-31BF815 1
    • 1 $2158.03
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    • 100 $1899.0668
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    BF815 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF815 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BF815 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BF815 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF815 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BF815 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BF815 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BF815 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BF815 Texas Instruments Discrete Devices 1978 Scan PDF

    BF815 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H8S-2110B

    Abstract: HDR-40P-2R-SMD samsung u544 AMD 218S6ECLA21FG SB600 BGA IC monacor sp 202 SI2315BDS-T1 BD2430 RS600ME 36B2 U544-5
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D MONACO-R C B g n l u a s i


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    PDF P16806 TP16807 TP16808 TP16809 TP16810 TP16811 TP16812 TP16813 TP16814 TP16815 H8S-2110B HDR-40P-2R-SMD samsung u544 AMD 218S6ECLA21FG SB600 BGA IC monacor sp 202 SI2315BDS-T1 BD2430 RS600ME 36B2 U544-5

    ICS951461

    Abstract: CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


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    PDF RS600M SB600 BA41-XXXXXA RS600 REV500 TP2123 TP2124 TP2125 ICS951461 CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A

    24B4

    Abstract: ap4435gm R7790 47-D3 RS600ME 218s6ecla21fg SMD BF5 schematic diagram crt tv samsung GR733 Socket AM2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D ACCORDION-R C B g n l u a s


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    PDF TP16840 TP16841 TP16842 TP16843 TP16844 TP16845 TP16846 TP16847 TP16848 TP16849 24B4 ap4435gm R7790 47-D3 RS600ME 218s6ecla21fg SMD BF5 schematic diagram crt tv samsung GR733 Socket AM2

    SS338A

    Abstract: Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


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    PDF RS600M SB600 BA41-XXXXXA RS600 REV500 TP2165 TP2123 TP2124 SS338A Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538

    BA41-00808A

    Abstract: BA41-00807A samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_INT C CPU : Chip Set :


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    PDF RS600M SB600 BA41-00807A BA41-00808A RS600 TP2656 REV500 TP2660 samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


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    PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14

    BA41-00809A

    Abstract: HAINAN3_EXT BA41 HAINAN3 BA41-00810A 218s6ecla21fg RS600ME smd diode code ak12 SI2315BDS-T1 B502 samsung p28
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_EXT C 1. COVER 2-7. DIAGRAM & ANNOTATION


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    PDF RS600 SB600 BA41-00809A BA41-00810A TP2123 TP2124 TP2125 TP2062 TP2063 HAINAN3_EXT BA41 HAINAN3 218s6ecla21fg RS600ME smd diode code ak12 SI2315BDS-T1 B502 samsung p28

    BF817

    Abstract: 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 BF805 n channel depletion MOSFET dual gate mosfet in uhf amplifier
    Text: Metal Can FET 's Low Leakage/Noise Current Case Outlines <M i I ^ 1 2 3 5 6 7 Source Drain Gate Source Drain Gate 1 1 1 2 2 2 3 -1 8 _ 0-23 L -4 5 Type No. Case BF800 BF801 BF802 BF805 BF806 TO -72 T 0 -7 2 TO-72 TO -72 TO-72 IG S Pol. max. pA N N N N N


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    PDF 1270J en-100kHz BF800 3x10-" BF801 T0-72 4x10-" BF802 BF805 6x10-" BF817 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 n channel depletion MOSFET dual gate mosfet in uhf amplifier

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    7057Q

    Abstract: CD 1517 intergrated circuit 8844T 1305T A2611 7040T A1560Q 1557Q F908 1313T
    Text: Philips Semiconductors Semiconductors for Radio, Audio and CD/DVD Systems_ Types added to the range since the last issue of the IC02 C D -R O M 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet,


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    PDF 80C31/80C51/87C51 80C32/80C52/87C52 80C451/83C451/87C451 80C52/80C54/80C58 80C528/83C528 80C550/83C550/87C550 80C552/83C552 P80C562; 80C652/83C652 80C851/83C851 7057Q CD 1517 intergrated circuit 8844T 1305T A2611 7040T A1560Q 1557Q F908 1313T

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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