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    Vishay Intertechnologies BF996SAGS08

    N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE, DEPLETION MODE RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA BF996SAGS08 109
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    BF996SA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF996SA Vishay Telefunken N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF

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    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure


    Original
    BF996S BF996S D-74025 20-Jan-99 PDF

    BF996S

    Abstract: BF996SA BF996SB
    Text: BF996S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure


    Original
    BF996S BF996S D-74025 20-Jan-99 BF996SA BF996SB PDF

    BF996S

    Abstract: BF996SA BF996SB
    Text: BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF tuners. Features D Integrated gate protection diodes D Low noise figure


    Original
    BF996S BF996S D-74025 20-Jan-99 BF996SA BF996SB PDF

    Untitled

    Abstract: No abstract text available
    Text: BF996S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages in UHF tuners. Features • Integrated gate protection diodes


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    BF996S BF996S D-74025 20-Jan-99 PDF