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    buk553

    Abstract: SO 402 NH BUK553-50A BUK553-50B T0220AB
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 0050LS0 =1 PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0020L20 BUK553-50A BUK553-50B BUK553 -ID/100 SO 402 NH T0220AB

    TAG 453 665 800

    Abstract: tag 665 100 BFQ67 KMI 814 ha 431 transistor 2857 730 transistor RF NPN POWER TRANSISTOR C 10-12 GHZ philips 2322 662 9632 transistor ati 0943
    Text: nu!1. 0 m b b s g ^ l DDESObb 3bD • APX „Product specification . , „ Philips Sem iconductors N AMER PHILIPS/DISCRETE b?E D NPN 8 GHz wideband transistor FEATURES BFQ67 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency


    OCR Scan     		PDF BFQ67 TAG 453 665 800 tag 665 100 BFQ67 KMI 814 ha 431 transistor 2857 730 transistor RF NPN POWER TRANSISTOR C 10-12 GHZ philips 2322 662 9632 transistor ati 0943