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    BFQ32M Search Results

    BFQ32M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFQ32M Philips Semiconductors PNP 4 GHz Wideband Transistor Original PDF

    BFQ32M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BEL187

    Abstract: NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO -5 -10 -15 20 Sanyo Elect Sanyo Elect NthAmerSemi CrimsonSemi CentralSemi NthAmerSemi V/O Electro Sanyo Elect Sanyo Elect Sanvo Elect ~~:~~~8U ~anyo ~Iect BEl187 2N3576 2N5455 2N5056 ST5771-1 ST5771-2


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    PDF 2SB1296 2SB1295 BFX12 BFX13 KT361 2SB1118S 2SB808 2SB1118E BEL187 NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH

    BFQ32M

    Abstract: BFQ63 UHF pnp transistor
    Text: bbSB'lBl O G B I S m Philips Semiconductors ô3H M A P X Product specification PNP 4 GHz wideband transistor BFQ32M ^ Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


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    PDF QD31Sm BFQ32M BFQ63. bbS3T31 0D31543 BFQ32M UB834S MBB347 BFQ63 UHF pnp transistor

    BFQ32M

    Abstract: transistor D 587 BFQ63 GHz PNP transistor
    Text: Product specification Philips Sem iconductors PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL ' / 5 bE D • 711062b BFQ32M □□•4 S 4 3 Q 3 3 T ■ P H IN PINNING DESCRIPTION PNP transistor In a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


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    PDF BFQ32M 711062b 0DHS43Q BFQ63. IS22I 7110flEb 00M5M35 MBB347 BFQ32M transistor D 587 BFQ63 GHz PNP transistor

    BFQ32M

    Abstract: No abstract text available
    Text: Philips Semiconductors bbBB'lBl 0031541 fi34 M APX Product specification PNP 4 GHz wideband transistor I BFQ32M . N Af1ER DESCRIPTION philips /discrete ERE PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


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    PDF BFQ32M BFQ63. 500MHz 0D31SM3 MBB347 BFQ32M

    BFQ32M

    Abstract: of bfq63 BFQ63 transistor 643
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERN A T I O N A L DESCRIPTION BFQ63 SbE D • 711Gô2b G04S4Ô4 SDD ■ PHIN PINNING NPN transistor in a 10-12 metal envelope with insulated electrodes and a shield lead connected to the


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    PDF BFQ63 711002b BFQ32M. 7110fl2b 0D454fl7 BFQ32M of bfq63 BFQ63 transistor 643

    Untitled

    Abstract: No abstract text available
    Text: H Philips S em iconductors lati53T31 00315T5 TQS H A P X ^Productspecification NPN 5 GHz wideband transistor BFQ63 N AUER PHIL IPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


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    PDF lati53T31 00315T5 BFQ63 BFQ32M. MEA302 MBB773

    BFQ63

    Abstract: BFQ32M of bfq63
    Text: Philips Semiconductors bibi.53,:] 3 1 G G B IS T S TGS HAPX Product specification NPN 5 GHz wideband transistor BFQ63 N AMER PHILIPS/DISCRETE DESCRIPTION b'IE D PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the


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    PDF bbS3T31 BFQ63 BFQ32M. D0315T8 BFQ63 ls12l2 BFQ32M of bfq63

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BF547A

    Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
    Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS


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    PDF LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD

    BFT92A

    Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
    Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E


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    PDF BFY90 TQ-92 BF689K BF763 SOt-37 BFT24 BFW92 BFW93 OT-122E OT-23 BFT92A BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92

    SOT-173

    Abstract: sot173 BFP96 BFQ32C
    Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A


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    PDF BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR SOT-173 sot173 BFP96 BFQ32C

    BFG591 amplifier

    Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
    Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors


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    PDF OT122 OT143 OT223 OT323 BFS17W BFG17A BFG16A BF547W BF747W BFT25 BFG591 amplifier SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    sot37

    Abstract: sot-37 T173 RE SOT
    Text: Small Signal Leaded Devices W ideband Transistors c o n t. hFE Ratings Type v CEO V v CBO V *c mA TO-39 TO-72 SOT-37 SOT-37 SOT-37 TO-72 25 10 15 15 10 15 40 20 25 25 18 30 150 50 25 25 50 25 SOT-103 SOT-37 SO T-173 TO-72 SOT-37 SO T-173 TO-72 SOT-37 SOT-37


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    PDF BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 BFG32 BFQ23 BFQ23C BFQ24 sot37 sot-37 T173 RE SOT