sot-23 Transistor MARKING CODE ZG
Abstract: ZG SOT23 transistor marking zg
Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-23
Q62702-F1298
sot-23 Transistor MARKING CODE ZG
ZG SOT23
transistor marking zg
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BFR 965
Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
Text: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1315
OT-23
BFR 965
BFR 36.2
Transistor BFR
sot 23 transistor 70.2
Q62702-F1315
sot-23 marking code 352
0482 transistor
0166 415 04 1 060
bfr 705
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Q62702-F1494
Abstract: No abstract text available
Text: BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-323
Q62702-F1494
Dec-11-1996
Q62702-F1494
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PDF
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MJE 280 power transistor
Abstract: Q62702-F1298 bfr280
Text: BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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900MHz
OT-23
Q62702-F1298
Dec-11-1996
MJE 280 power transistor
Q62702-F1298
bfr280
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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900MHz
Q62702-F1298
OT-23
D155144
flE35fc
D12514S
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PDF
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BFR91
Abstract: Transistor BFR 90 application transistor BFR91
Text: BFR 91 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91 Marking Plastic case XTO 50
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BFR91
D-74025
Transistor BFR 90 application
transistor BFR91
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Transistor BFR 90 application
Abstract: BFR90A Transistor BFR 35 Transistor BFR 90 693 071 010 811
Text: BFR 90 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90A Marking Plastic case XTO 50
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BFR90A
D-74025
Transistor BFR 90 application
Transistor BFR 35
Transistor BFR 90
693 071 010 811
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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900MHz
Q62702-F1494
OT-323
23SbQ5
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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900MHz
Q62702-F1494
OT-323
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PDF
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4934N
Abstract: No abstract text available
Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTMFS4934N
NTMFS4934N/D
4934N
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4934N
Abstract: NTMFS4934N 362 N MOSFET NTMFS4934NT1G
Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTMFS4934N
NTMFS4934N/D
4934N
362 N MOSFET
NTMFS4934NT1G
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PDF
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SO8F
Abstract: No abstract text available
Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTMFS4934N
NTMFS4934N/D
SO8F
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PDF
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VSO05561
Abstract: No abstract text available
Text: BFR 280W NPN Silicon RF Transistor 3 For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VSO05561
OT-323
900MHz
Oct-25-1999
VSO05561
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PDF
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Untitled
Abstract: No abstract text available
Text: BFR 280 NPN Silicon RF Transistor 3 For low noise, low-power amplifiers in mobile communications systems pager, cordless telephone at collector currents from 0.2 mA to 8 m fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05161
OT-23
900MHz
Oct-25-1999
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4934N
Abstract: No abstract text available
Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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NTMFS4934N
NTMFS4934N/D
4934N
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PDF
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lge 673
Abstract: TRANSISTOR cq 802
Text: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!
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053b3E0
017Q3C
62702-F1218
OT-23
01-1-1-7O
lge 673
TRANSISTOR cq 802
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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PDF
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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Untitled
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 83350E Multi-Conductor - MIL-W-16878/4 Type E For more Information please call 1-800-Belden1 Description: 20 AWG stranded (19x32) silver-plated copper conductors, cabled and color-coded, extruded TFE Teflon
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83350E
MIL-W-16878/4
1-800-Belden1
19x32)
19x32
Megaohms/1000
73/23/EEC)
93/68/EEC.
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PDF
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Untitled
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8916 Hook-up/Lead - UL AWM Style 1015 For more Information please call 1-800-Belden1 Description: 14 AWG stranded 41x30 tinned copper conductor, PVC insulation. Rated 105ºC, 600V. Rated 2500V
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Original
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1-800-Belden1
41x30)
41x30
73/23/EEC)
93/68/EEC.
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PDF
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Untitled
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8451 Multi-Conductor - Single-Pair Cable For more Information please call 1-800-Belden1 Description: 22 AWG stranded 7x30 TC conductors, polypropylene insulation, paper wrap, twisted pair, overall Beldfoil
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Original
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1-800-Belden1
73/23/EEC)
93/68/EEC.
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PDF
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max 8770
Abstract: AWM Style 2093
Text: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 8770 Multi-Conductor - Audio, Control and Instrumentation Cable For more Information please call 1-800-Belden1 Description: 18 AWG stranded 16x30 tinned copper conductors, conductors cabled, polyethylene insulation, overall
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Original
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1-800-Belden1
16x30)
16x30
73/23/EEC)
93/68/EEC.
max 8770
AWM Style 2093
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PDF
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007500
Abstract: TAG+8916 Qualcomm,+MSM+8916
Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8916 Hook-up/Lead - UL AWM Style 1015 For more Information please call 1-800-Belden1 Description: 14 AWG stranded 41x30 tinned copper conductor, PVC insulation. Rated 105ºC, 600V. Rated 2500V
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Original
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1-800-Belden1
41x30)
41x30
73/23/EEC)
93/68/EEC.
007500
TAG+8916
Qualcomm,+MSM+8916
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PDF
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Untitled
Abstract: No abstract text available
Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 7939A Multi-Conductor - Category 5e DataTuff Twisted Pair Cable For more Information please call 1-800-Belden1 Description: 24 AWG stranded 7x32 bare copper conductors, bonded pairs, polyolefin insulation, polyester separator,
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1-800-Belden1
200MHz
100BaseTX,
100BaseVG
155ATM,
622ATM,
RS-422,
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