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    FLE35FC Search Results

    FLE35FC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 16Mx 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version)


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    3164400J/T 3165400J/T 3164400J/T-50) 3164400J/T-60) 3165400J/T-50) 3165400J/T-60) 0235bD5 400J/T-50/-60 235b05 0Q71b5b PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and


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    P-DSO-28-1 PDF

    siemens sab 82538

    Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
    Text: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each


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    CRC-32 fl23Sb05 siemens sab 82538 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441 PDF

    SIEMENS BST

    Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
    Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70


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    16-Bit 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50) 3118160BSJ/BST-60) 3118160BSAS 160BSJ/BST 16-DRAM flS3Sb05 SIEMENS BST SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 173 Infineon technologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds to flDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 £2 TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-220 C67078-S1452-A2 S35bG5 Q133777 SQT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz Q62702-F1298 OT-23 D155144 flE35fc D12514S PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS C166-Family of High-Performance CMOS 16-Bit Microcontrollers C163-L Data Sheet C163-L • • • • • • • • • • • • • • 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline - 80 ns Instruction Cycle Time at 25 MHz CPU Clock


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    C166-Family 16-Bit C163-L 16-Priority-Level P-TQFP-100-3 2IA-BIDI100X PDF

    Untitled

    Abstract: No abstract text available
    Text: BSO 307N I nf ine on technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage Vqs • Enhancement mode Drain-Source on-state resistance ffos on • Avalanche rated Continuous drain current b • Dual N channel


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    sisooo56 Q67000-S4012 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAT 14-099 Silicon Dual Schottky Diode • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-099


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    Q62702-A3461 OT-143 EHD07095 01BQ33E PDF

    smd transistor cy 813

    Abstract: TCA505A inductive proximity detector ic TCA505 B TCA505G gg3s
    Text: 47E D SIEMENS • fl235b05 003S3fl5 4 ■ S I E 6 SIEMENS AKTIEN6ESELLSCHAF ^ ¿ 6 - 0 3 1C for Inductive Proximity Switches with Short-Circuit Protection TCA 505 Bipolar IC Preliminary Data Features • • • • • • • • • • Wide supply voltage of 31 to 4.5 V


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    fl235b05 003S3fl5 Q67000-A8278 fl23SbD5 G035402 T-65-05 smd transistor cy 813 TCA505A inductive proximity detector ic TCA505 B TCA505G gg3s PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability


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    Q62702-F1590 OT-343 2200b IS21I2 fl235bQS 0122QQ7 0235b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For A F input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated N P N /PN P Transistors in one package Tape loading orientation


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    847PN Q62702-C2374 OT-363 flE35fc fl235bD5 01SQ5Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: Infineon technologies FP 420 L 90 B Double Differential Magneto Resistor Version 2.0 Incl. lacquer-cover 1.6 pin connection Approx. weight 0.2 g D im ensions in mm Features Typical Applications Double differential magneto resistor on one carrier Accurate intercenter spacing


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    a235bD5 flE35fc 013437b PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SP 061OT SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = 0.-2.0V Type ^DS #D f lDS(on) Package Marking SP 061 OT -60 V -0.13 A io n SOT-23 sSF Type SP 061 OT Ordering Code Q67000-S088 Tape and Reel Information


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    061OT OT-23 Q67000-S088 E6327 fl23Sfc 235b05 PDF

    siemens 4261

    Abstract: No abstract text available
    Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4261 Bipolar IC Features • • • • • • • • • • • • • Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity Input voltage up to 42 V


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    Q67000-A9003 P-T0220-7-1 Q67000-A9109 P-T0220-7-2 067000-A9059 P-DSO-20-6 35x45" A235bD5 siemens 4261 PDF

    MARKING L31 SMD

    Abstract: No abstract text available
    Text: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package


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    4-02W Q62702-A1215 SCD-80 flE35fc 01EDEEE 100MHz fl235b05 MARKING L31 SMD PDF

    TLE4215

    Abstract: transistor k 4215 IEP00718
    Text: fc.DE J> • fi23StiGS SIEMENS DüSOblE Ib l « S IE G SIEMENS AKTIENGESELLSCHAF Intelligent Double High-Side Switch 2 x 0.5 A TLE 4215 Features • Double high-side switch, 2 • Power limitation x 0.5 A • Overtemperature shutdown • Status monitoring


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    23StiGS P-DIP-16 Q67000-A8184 235b05 aE35fc 0G50b21 aed00009 aed00912 TLE4215 transistor k 4215 IEP00718 PDF

    Siemens xl 532

    Abstract: KCB02 SAB 529 83C166W-5M Siemens mt4 siemens multi channel timer 80C166W-MT3 Compare CISC and RISC gpr 163 80C166
    Text: SIEMENS C16x-Family of SAB 80C166W/83C166W High-Performance CMOS 16-Bit Microcontrollers Preliminary SAB 80C166W / 83C166W • • • • • • • • • • • • • • • • • • • • • • • • • • • • 16-Bit Microcontroller


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    C16x-Family 80C166W/83C166W 16-Bit 80C166W 83C166W 235LD5 Siemens xl 532 KCB02 SAB 529 83C166W-5M Siemens mt4 siemens multi channel timer 80C166W-MT3 Compare CISC and RISC gpr 163 80C166 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 311 7800BSJ L -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC CAS access time


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    7800BSJ PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon High-Voltage Transistors BFN 37 BFN 39 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 36, BFN 38 NPN Type


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    Q62702-F1304 Q62702-F1305 OT-223 EHP0064I EHF00643 fi235fcjG5 PDF