BFY90
Abstract: 50w transistor 205MHz transistor 127
Text: BFY90 MECHANICAL DATA Dimensions in mm inches 4.95 (0.195) 4.52 (0.178) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BFY90 is a low noise transistor intended for
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BFY90
BFY90
200MHz
202MHz
205MHz
208MHz
300ms
50w transistor
205MHz
transistor 127
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BFY90
Abstract: transistor Bipolar BFY90 0025a 1ghz npn power BFY90 Data
Text: BFY90 MECHANICAL DATA Dimensions in mm inches 4.95 (0.195) 4.52 (0.178) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BFY90 is a low noise transistor intended for
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BFY90
BFY90
200mW
BFY90CSM
BFY90DCSM
BFY90QF
transistor Bipolar BFY90
0025a
1ghz npn power
BFY90 Data
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BFY90
Abstract: BFX89 case BFX89 BFY-90 BFY90 Data bfx89-bfy90 BFR99A 798m BFR99 208MHZ
Text: BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER • • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : • TELECOMMUNICATIONS • WIDE BAND UHF AMPLIFIER • RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using
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BFX89
BFY90
BFX89
BFY90
BFR99A.
100KHz
202MHZ,
case BFX89
BFY-90
BFY90 Data
bfx89-bfy90
BFR99A
798m
BFR99
208MHZ
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BFY90
Abstract: No abstract text available
Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 30.0 V NO. BFY90 Voltage, Collector to Emitter (VCE) 15.0 V TYPE NPN-VHF/UHF 2.5 V empty empty 25.0 A empty empty A CASE TO-72 W empty empty empty empty Voltage, Emitter to Base (VEBO)
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transistor npn 100khz collector voltage 5v
Abstract: BFY90 J BFY90
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR BFY90 TO-72 APPLICATIONS: Telecommunications, Wide Band UHF Amplifier & Radio Communications.
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BFY90
C-120
transistor npn 100khz collector voltage 5v
BFY90
J BFY90
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BFY90
Abstract: BFX89
Text: , inc. - Conductor TELEPHONE: (201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER , SILICON PLANAR EPITAXIAL TRANSISTORS , TO-72 METAL CASE , VERY LOW NOISE APPLICATIONS :
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BFY90
Abstract: BFY90 Data MSC1310
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, •
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To-72
Collector21|
MSC1310
BFY90
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bfy90
Abstract: transistor amplifier VHF/UHF BFY90 Data
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, •
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To-72
BFY90
transistor amplifier VHF/UHF
BFY90 Data
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, •
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To-72
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BFY90
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, •
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To-72
BFY90
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bfy90
Abstract: No abstract text available
Text: BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB typ @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 • 1 Power Gain, GPE = 19 dB (typ) @ 200 MHz
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bfy90
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BFY90
Abstract: No abstract text available
Text: Data Sheet Central BFY90 NPN SILICON RF TRANSISTOR S em ico n d u cto r Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-72 CASE Manufacturers of W orld Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BFY90 is a Silicon NPN Epitaxial Planar Transistors mounted in a
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BFY90
BFY90
500MHz
200MHz
100kHz
200MHz
500MHz,
205MHz
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BFY90 PHILIPS
Abstract: BFW92 BFW92 sot23 BFS17 BFY90 X3A-BFW92 Philips BFy90 philips bfw92
Text: Philips Semiconductors _ • bb53S31 0032220 APX 254 Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 N AMER PHILIPS/DISCRETE DESCRIPTION bRE 3> MECHANICAL DATA Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)
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bb53S31
X3A-BFW92
BFW92
BFY90
BFS17
X3A-BFW92
URV-3-5-52/733
BFY90 PHILIPS
BFW92
BFW92 sot23
BFS17
BFY90
Philips BFy90
philips bfw92
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BFY90
Abstract: d5 transistor npn BFY90 Data transistor BC 245 c B5723 punched transistor bc 132 TRANSISTOR "BC 258"
Text: SILICON PLANAR EPITAXIAL N-P-N TRANSISTOR o tO BFY90 o T Y PIC A L O U T PU T CHARACTERISTICS i.’. n r r n / i BFY90 P age CI T Y PIC A L FE E D B A C K ADM ITTAN CE P L O T T E D AGAINST C O L L E C T O R C U R REN T AND FREQ U EN CY F T f n ir r r T P age CIO
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BFY90
B5742
800MC/Ã
BFY90
d5 transistor npn
BFY90 Data
transistor BC 245 c
B5723
punched
transistor bc 132
TRANSISTOR "BC 258"
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BFY90 PHILIPS
Abstract: No abstract text available
Text: bbS3T31 0032220 254 Philips Semiconductors • AP X Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 \ N AMER PHILIPS/DISCRETE DESCRIPTION bRE D MECHANICAL DATA Crystal NPN crystal used in BFW92 SOT37 , BFY90 (TO-72) and BFS17 (SOT23). Crystals are supplied as whole
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bbS3T31
X3A-BFW92
BFW92
BFY90
BFS17
BFY90 PHILIPS
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BFY90 PHILIPS
Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
Text: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the
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BFY90
711002b
004bD4^
MBA383
BFY90 PHILIPS
BFY90
ic 1014b
PHILIPS WIDE BAND AMPLIFIERS
3I15
enamelled copper wire
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Untitled
Abstract: No abstract text available
Text: m BOE D " T 7^ l'\S 7^2^237 QG3D'^S T • BFX89 BFY90 SGS-THOMSON tLiOTOOiOOS S-THOMSON WIDE BAND VHF/UHF AMPLIFIER a SILICON PLANAR EPITAXIAL TRANSISTORS ■ TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIONS : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER
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BFX89
BFY90
BFY90
BFR99A.
G-t33J
BFX89-BFY9Q
0030Tifl
T-31-15
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bly 2 10
Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz
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BFY90
O-117
T0-60CE
S0-104
SO-104
bly 2 10
BLW11
blx66
BFY90
uhf vhf amplifier
bly62
transistor zg
BLY53A
BLY78
BFy 90 transistor
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BFY90
Abstract: BFX89 BFY90 Data BFR99A case BFX89 J BFY90 bfx89-bfy90
Text: 30E D • 7^2=1237 Q 0 3 D C^ S T ■ ' ~ T ? 1 rrz SCS-THOMSON ^ 7# > [ - \ S BFX89 BFY90 S G S-THOMSON WIDE BAND VHF/UHF AMPLIFIER i SILICON PLANAR EPITAXIAL TRANSISTORS . TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIO N S : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER
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BFX89
BFY90
BFX89
BFY90
BFR99A.
BFX89-BFY90
---T-31-1fi
7R2T237
IS21J
BFY90 Data
BFR99A
case BFX89
J BFY90
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BFY90
Abstract: BFX89 89-1-c Transistor BFX 25 G-1932
Text: BFY90 BFX89 SILICON PLANAR NPN W IDE B A N D V H F /U H F A M P L IF IE R S The BFX 89 and BFY 90 are silicon planar epitaxial NPN transistors in Jed ecT O -72 metal case, particularly designed fo r wide band com m o n-e m itter linear am plifier applications up
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BFY90
BFX89
G-1932
G-11133
BFX89
89-1-c
Transistor BFX 25
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vk200 philips
Abstract: BFY90 PHILIPS BFY90 VK200 Philips BFy90
Text: Philips Semiconductors b b s a ia i D0321S5 b^E M AP V Product specification NPN 1 GHz wideband transistor BFY90 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the
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D0321S5
BFY90
andS15q
UEA397
vk200 philips
BFY90 PHILIPS
BFY90
VK200
Philips BFy90
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BFY90 PHILIPS
Abstract: BFW92 sot23 IEC-134 BFS17 BFW92 BFY90 IEC134 X3A-BFW92 philips bfw92
Text: P rodu ct specification P h ilip s S em icon du ctors NPN 1 GHz wideband transistor crystal PH IL IP S I N T E R N A T I O N A L SbE X3A-BFW92 711Dfl2b O D M b l l O 7Tb IPHIN M EC H A N IC A L DATA DESCRIPTION Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)
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BFW92
BFY90
BFS17
X3A-BFW92
X3A-BFW92
711Dfl2b
RV-3-5-52/733
IEC134)
BFY90 PHILIPS
BFW92 sot23
IEC-134
BFS17
BFW92
BFY90
IEC134
philips bfw92
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BFY90
Abstract: transistor BC 245 c transistor bc 132 SO-12A transistor BC 245 transistor BC 583 B5723 n-p-n power transistor planar BFY90 Data J BFY90
Text: BFY90 SILICON PLANAR EPITAXIAL N-P-N TRANSISTOR N -P -N s ilic o n planar ep itaxial tr a n sisto r featu rin g low n o is e , low in te r m odulation d isto rtio n and a high tra n sitio n freq u en cy. Intended for m ilita r y and in d u strial ap p lication s.
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BFY90
500Mc/s
SO-12A/SB4-3
transistor BC 245 c
transistor bc 132
SO-12A
transistor BC 245
transistor BC 583
B5723
n-p-n power transistor planar
BFY90 Data
J BFY90
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TO-206A
Abstract: BFY 83 BFY90T BFY 99 BFY90 MOTOROLA
Text: • MOTOROLA SC CXSTRS/R F MbE D b3fci72S4 G O T m a a MOTOROLA 4 ■MOTb T ■ SEMICONDUCTOR BFX89 BFY90 TECHNICAL DATA T h e R F L ine fT = 2 .0 G H z @ 1 0 m A HIG H FREQUENCY T R A N SISTO R S NPN SILICON HIGH-FREQUENCY TRANSISTORS N P N S IL IC O N . . . d e s ig n e d for V H F a n d U H F a p p lic a t io n s w h e r e h ig h -g a in , lo w *
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b3fci72S4
BFX89
BFY90
TO-206A
BFY 83
BFY90T
BFY 99
BFY90 MOTOROLA
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