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    BG2011SM Search Results

    BG2011SM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BG2011SM Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BG2011SM Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

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    BPTM

    Abstract: No abstract text available
    Text: H><3 V'-' BG2011SM-B GaAs Integrated Circuit DESCRIPTION: BG2011SM-B is a GaAs Integrated Circuit designed lor Wideband Low Noise Ampfification. See Figures 1 - 1 5 ABSOLUTE MAXIMUM RATINGS: Ta = 25’C Drain to Source Voltage Vds Gate To Source Voltage


    OCR Scan     		PDF BG2011SM-B BG2011SM-B BG2011SM-BPM4 BG2011SU-BPM4 05/12NB. BPTM

    BG3013

    Abstract: FET 8PIN BG3013F 3182 ROHM fi01
    Text: ROHM CO LT» MDE D PI '- H £ - 1 9 -1 3 EGaAs Devices • Rohm's GaAs devices are available in FETs and integrated circuits fabricated with the GaAs MESFET process, and Hyper FETs utilizing the MBE process. B Hyper FET Hetero Structured InGaAs FET • Ultra-Low Noise Hyper FET


    OCR Scan     		PDF RHF1203CL BG3011F/CF BG3012F/CF BG3013F/CF 128/T29) BG3013 FET 8PIN BG3013F 3182 ROHM fi01

    Untitled

    Abstract: No abstract text available
    Text: _ . . . nDHffl GaAs device Absolute maximum ratings Ta=25°C Part No. BG20Î1SM-B Application CATV,DBS IF Electrical characteristics (Ta=25°C ) VDS(V) VGS(V) PT(mW) T c h fC ) PG Typ.(dB) NF Typ.(dB) 6 -4 200 125 10 2.1 •Dimensions •Circuit f(GHz)


    OCR Scan     		PDF BG2011SM-B

    RCM2008R

    Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
    Text: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88


    OCR Scan     		PDF 2N3906 2N3946 2N3947 2N4059 N4060 2N4061 2N4062 2N4123 2N4124 2N4125 RCM2008R 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857

    Untitled

    Abstract: No abstract text available
    Text: GaAs Devices • Hyper FET Hetero Structured InGaAs FET . 6 • Ultra-Low Noise Hyper F E T . 6 ■ RF Integrated • Wide-Band, Low-Noise A m plifiers. 6


    OCR Scan     		PDF BG2011SM