BGA153
Abstract: SF-BGA153A-B-11
Text: D Package Code: BGA153A C 10.16mm [0.400"] 1.27mm [0.050"] See BGA pattern code to the right for actual pattern layout Y X 20.32mm [0.800"] Top View reference only 1.27 mm [0.050"] 2 0.36mm [0.014"] dia. 5.33mm 3.74mm [0.147"] [0.210"] Ø 0.64mm pad [Ø 0.025"]
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BGA153A
FR4/G10
SF-BGA153A-B-11
BGA153
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CXK77Q18162GB
Abstract: CXK77Q18162GB-25 CXK77Q18162GB-27 CXK77Q18162GB-3 CXK77Q36162GB CXK77Q36162GB-25 CXK77Q36162GB-27 CXK77Q36162GB-3
Text: SONY CXK77Q36162GB / CXK77Q18162GB 16Mb DDR1 HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 25/27/3 Preliminary Description The CXK77Q36162GB (organized as 524,288 words by 36 bits) and the CXK77Q18162GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input
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CXK77Q36162GB
CXK77Q18162GB
CXK77Q36162GB
BGA-153P-021
BGA153-P-1422
750mA
700mA
CXK77Q18162GB
CXK77Q18162GB-25
CXK77Q18162GB-27
CXK77Q18162GB-3
CXK77Q36162GB-25
CXK77Q36162GB-27
CXK77Q36162GB-3
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BGA676
Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18
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BGA16A1ATTERNS
BGA676
BGA665
BGA-1156
156 QFN 12X12
LGA240
BGA-783
BGA441
BGA1024
BGA1521
7286X
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Untitled
Abstract: No abstract text available
Text: SONY CXK77Q36162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 512K x 36 Description The CXK77Q36162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer
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CXK77Q36162GB
CXK77Q36162GB
750mA
700mA
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CXK77L18162GB
Abstract: CXK77L18162GB-25 CXK77L18162GB-27 CXK77L18162GB-3
Text: SONY CXK77L18162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer
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CXK77L18162GB
CXK77L18162GB
CXK77L18162GB-25
CXK77L18162GB-27
CXK77L18162GB-3
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ddr1 ram
Abstract: No abstract text available
Text: SONY CXK77Q36162AGB / CXK77Q18162AGB 16Mb DDR1 HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 25/27/3 Preliminary Description The CXK77Q36162AGB (organized as 524,288 words by 36 bits) and the CXK77Q18162AGB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input
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CXK77Q36162AGB
CXK77Q18162AGB
CXK77Q36162AGB
BGA153-P-1422
200mA
250mA
ddr1 ram
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Untitled
Abstract: No abstract text available
Text: SONY CXK77Q36162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 512K x 36 Description The CXK77Q36162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer
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CXK77Q36162GB
CXK77Q36162GB
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BGA-153P-021
Abstract: sony bus control BGA153-P-1422
Text: SONY CXK77Q18162AGB Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77Q18162AGB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer
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CXK77Q18162AGB
CXK77Q18162AGB
All35
BGA-153P-021
BGA153-P-1422
BGA-153P-021
sony bus control
BGA153-P-1422
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CXK77R1882AGB
Abstract: CXK77R3682AGB IDD235
Text: SONY CXK77R3682AGB / CXK77R1882AGB 8Mb Double Data Rate HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Organization 35/39/42 Preliminary Description The CXK77R3682AGB (organized as 262,144 words by 36 bits) and the CXK77R1882AGB (organized as 524,288 words by
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CXK77R3682AGB
CXK77R1882AGB
CXK77R3682AGB
CXK77R1882AGB
IDD235
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CXK77L18162GB
Abstract: CXK77L18162GB-25 CXK77L18162GB-27 CXK77L18162GB-3
Text: SONY CXK77L18162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer
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CXK77L18162GB
CXK77L18162GB
860mA
880mA
940mA
940mA
1000mA
980mA
780mA
830mA
CXK77L18162GB-25
CXK77L18162GB-27
CXK77L18162GB-3
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CXK77L18162AGB-25
Abstract: CXK77L18162AGB-27 CXK77L18162AGB-3 ddr1 ram
Text: SONY CXK77L18162AGB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162AGB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer
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CXK77L18162AGB
CXK77L18162AGB
BGA-153P-021
BGA153-P-1422
CXK77L18162AGB-25
CXK77L18162AGB-27
CXK77L18162AGB-3
ddr1 ram
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FP-X4KPG223-01
Abstract: reflow profile FOR LGA COMPONENTS bga96 BGA165 BGA292 SO8A CA-SO18A-Z-J-T-01 SF-QFE352SA-L-01 BGA480B CA-PLCC44-D-P-T-01
Text: Ironwood Electronics PB.1 Probing Adapters We offer probing adapters and logic analyzer adapters for all SMT package types, as well as socket probes for DIP and PLCC. We are Agilent and Tektronix partners. In addition, we offer adapters to facilitate the use of in-circuit emulators
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XC2018,
XC2018
XC3020,
XC3064,
XC3042,
XC3090,
XC3090
FP-X4KPG223-01
reflow profile FOR LGA COMPONENTS
bga96
BGA165
BGA292
SO8A
CA-SO18A-Z-J-T-01
SF-QFE352SA-L-01
BGA480B
CA-PLCC44-D-P-T-01
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BGA153
Abstract: CQ 34 TC55YK1618XB-666 153-bump
Text: TOSHIBA TC55YK1618XB-666f-500f-400 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS STATIC RAM DESCRIPTION The TC55YK1618XB is a 18,874,368-bit synchronous static random access memory SRAM organized
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TC55YK1618XB-666
576-WORD
18-BIT
TC55YK1618XB
368-bit
BGA153-1422-1
BGA153
CQ 34
153-bump
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Untitled
Abstract: No abstract text available
Text: C—BGA153—142E—1.27BZF Uniti pip i □ct.2002
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C-BGA153-1422-1
27BZF
2002C-BGA153-1422-1
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Untitled
Abstract: No abstract text available
Text: P—BGA153—142E—1.27BZ Uniti pip i Nov.2003
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P-BGA153-1422-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55YK1636X6-666,-500,-400 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM DESCRIPTION The TC55YK1636XB is a 18,874,368-bit synchronous static random access memory SRAM organized as 524,288 words by 36 bits. It is designed for use as a secondary cache in applications where high
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TC55YK1636X6-666
TC55YK1636XB
368-bit
BGA153-1422-1
TC55YK1636XB-666
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BGA153-1422-1
Abstract: G31D
Text: TOSHIBA TC55YK1618XB-666f-500t-400 T EN T A T IV E T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT S IL IC O N G A T E C M O S 1,048,576-WORD BY 18-BIT SYNCHRONOUS STATIC RAM DESCRIPTION The TC55YK1618XB is a 18,874,368-bit synchronous static random access memory SRAM organized
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TC55YK1618XB-666f-500t-400
TC55YK1618XB
368-bit
TC55YK1618XB-666
D031D2Ì
BGA153-1422-1
G31D
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bd-9b
Abstract: BGA153 3DA18 TC55YK1636XB-666 A1841
Text: T O S H IB A TC55YK1636XB-666,-500,-400 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM DESCRIPTION The TC55YK1636XB is a 18,874,368-bit synchronous static random access memory SRAM organized
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TC55YK1636XB-666
288-WORD
36-BIT
TC55YK1636XB
368-bit
BGA153-1422-1
bd-9b
BGA153
3DA18
A1841
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