BGA84
Abstract: 74HC573 74HC573 DATASHEET DIP-40
Text: AE-B84-SP3 Page 1 of 2 AE-B84-SP3 DIP40/BGA84 specialized adapter for FLASH memory. Device package dimensions: 11.6 x 8.0 x 1.0 mm, 0.8 mm pitch. Click the programmer model below to get an appropriate list of the devices supported by the adapter: z z ChipProg-40
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AE-B84-SP3
DIP40/BGA84
ChipProg-40
ChipProg-48,
DIP-40
BGA-84
74HC573
150pF
BGA84
74HC573 DATASHEET
DIP-40
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PDF
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BGA84
Abstract: 74HC573 BGA-84 diode b84 DIP-40 bga 84
Text: AE-B84-SP1 Page 1 of 2 AE-B84-SP1 DIP40/BGA84 specialized adapter for FLASH memory. Device package dimensions: 11.6 x 8.0 x 1.2 mm, 0.8 mm pitch. Click the programmer model below to get an appropriate list of the devices supported by the adapter: z z z ChipProg+
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Original
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AE-B84-SP1
DIP40/BGA84
ChipProg-40
ChipProg-48,
DIP-40
BGA-84
74HC573
150pF
BGA84
BGA-84
diode b84
DIP-40
bga 84
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z
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M14D5121632A
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PDF
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M14D1G166
Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt
Text: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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Original
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M14D1G1664A
M14D1G166
m14d1g
M14D1G1664A
m14d1g16
DDRII
esmt
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PDF
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ene kb3926qf c0
Abstract: ene kb3926qf kb3926 ene kb3926qf d2 kb3926qf d2 kb3926qf c0 IDT92HD RT8206B AT5231 OZ8119
Text: 1 2 3 4 5 7 8 Jones/Cujo BLOCK DIAGRAM PCB STACK UP 8L Dis. LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /35W PAGE 3,4 LAYER 3 : IN2 01 CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 4 : SGND1
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Original
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318MHz
RJ-45
ALPRS355B
MLF64PIN
27MHz
PR156
15VALW
PDTC144EU
PR152
PR153
ene kb3926qf c0
ene kb3926qf
kb3926
ene kb3926qf d2
kb3926qf d2
kb3926qf c0
IDT92HD
RT8206B
AT5231
OZ8119
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PDF
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ene kb3926qf
Abstract: ene kb3926qf d2 KB3926QF A1 ene kb3926qf c0 kb3926qf c0 kb3926qf d2 kb3926 apl*5606 92HP61B7X5 AT5231
Text: 1 2 3 4 5 7 8 01 UT7D BLOCK DIAGRAM PCB STACK UP 8L CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /45W PAGE 3,4 LAYER 3 : IN1 CLK_CPU_BCLK,CLK_CPU_BCLK# LAYER 4 : SVCC CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# DREFCLK,DREFCLK#
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Original
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318MHz
RJ-45
ALPRS355B
MLF64PIN
27MHz
PAG209
1U/10V
PC206
PR199
PR200
ene kb3926qf
ene kb3926qf d2
KB3926QF A1
ene kb3926qf c0
kb3926qf c0
kb3926qf d2
kb3926
apl*5606
92HP61B7X5
AT5231
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PDF
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kb3926
Abstract: kb3926 d3 MAX8774 MCP67D Maxim MAX8774 kb3920 short stop 12v p18 30a kb3926 d2 ac30 c51 100v 10p quanta at1
Text: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2
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Original
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Turion64
5W/35W
667mhz
667mhz
NB8M-64bit
RJ-45
PC112
330U/2V/9m
330U/2V/9m
kb3926
kb3926 d3
MAX8774
MCP67D
Maxim MAX8774
kb3920
short stop 12v p18 30a
kb3926 d2
ac30 c51 100v 10p
quanta at1
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PDF
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msi G31 crb
Abstract: sc413 2pc501 nvidia nb8 vga board APL5912 MS-1636 nvidia BGA OZ711SP1-1 10n400 Socket AM2
Text: A B C D E MS-1636 VER : 1.0 +3V , +5V TPI51120 DC JACK & Selector Merom Page 3,4 Page 40 1 2 3 1 +VTT 1.05V 01:BLOCK DIAGRAM 02:PLATFORM 03:Merom-1 CPU (HOST BUS) 04:Merom-2 CPU (POWER/GND) 05:i965PM-1 (HOST) CRT 06:i965PM-2 (DMI/VGA) RGB 07:i965PM-3 (DDR2)
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Original
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MS-1636
TPI51120
i965PM-1
i965PM-2
i965PM-3
i965PM-4
i965PM-5
i965PM-6
32MX16
msi G31 crb
sc413
2pc501
nvidia nb8 vga board
APL5912
nvidia BGA
OZ711SP1-1
10n400
Socket AM2
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PDF
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kb3926
Abstract: RTM875T-606 RTM875 G3-64 820p fcbga G966-25 cntr cd1 100 1p0 Quanta AT3 at3 block diagram KB3920 KB3926 AT5 C833
Text: 1 2 PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 A 3 04-06-08-12-F- 4 0402 footprint 0603 footprint 0805 footprint 1206 footprint 1% tolerance 5 6 7 8 AT3 BLOCK DIAGRAM CPU THERMAL SENSOR CPU Merom LAYER 3 : IN1 01 14.318MHz A PAG 5 LAYER 4 : IN2 478P uPGA /35W
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Original
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04-06-08-12-F--
318MHz
ICS9LPRS355AGLFT
64pinsTSSOP
RJ-45
NVDI37
GPIO40
GPIO41
GPIO42
GPIO52
kb3926
RTM875T-606
RTM875
G3-64 820p fcbga
G966-25
cntr cd1 100 1p0
Quanta AT3
at3 block diagram
KB3920
KB3926 AT5 C833
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PDF
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SSOP-90
Abstract: MBM29PL3200BE MBM29PL3200TE fbga84
Text: 1 : 352'8&76 0%0 3/7(%( • • • 32 M-Bit Page Mode Flash Memory with x16/x32-Bit Bus Width: MBM29PL3200TE/BE • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •
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x16/x32-Bit
MBM29PL3200TE/BE
32-bit
SSOP-90,
FBGA-84
ns/35
MBM29PL3200BE
ns/90
MBM29PL3200TE
SSOP-90
MBM29PL3200BE
MBM29PL3200TE
fbga84
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PDF
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M14D5121632A
Abstract: No abstract text available
Text: ESMT M14D5121632A 2K DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
M14D5121632A
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PDF
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BGA676
Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18
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Original
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BGA16A1ATTERNS
BGA676
BGA665
BGA-1156
156 QFN 12X12
LGA240
BGA-783
BGA441
BGA1024
BGA1521
7286X
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PDF
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EM44BM1684LBA
Abstract: bga 84 BGA84 BGA-84 DDR2-667 em44bm1684lba-3f
Text: eorex EM44BM1684LBA 512Mb 8Mx4Bank×16 Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ=1.8V ± 0.1V. • All inputs and outputs are compatible with SSTL_18 interface. • Fully differential clock inputs (CK,/CK) operation. • 4 Banks
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Original
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EM44BM1684LBA
512Mb
BGA-84
EM44BM1684LBA
bga 84
BGA84
DDR2-667
em44bm1684lba-3f
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M14D5121632A (2K) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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Original
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M14D5121632A
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: ESM T M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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Original
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M14D1G1664A
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PDF
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M14D5121632A
Abstract: M14D512
Text: ESMT Preliminary M14D5121632A (2T) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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Original
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M14D5121632A
M14D5121632A
M14D512
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PDF
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Untitled
Abstract: No abstract text available
Text: ESM T M14D5121632A 2H Automotive Grade DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
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PDF
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20890
Abstract: MBM29PL3200BE70 MBM29PL3200BE90 MBM29PL3200TE70 MBM29PL3200TE90
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-3E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each
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Original
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DS05-20890-3E
MBM29PL3200TE70/90
MBM29PL3200BE70/90
MBM29PL3200TE/BE
90-pin
84-ball
MBM29PL3200TE70
MBM29PL3200BE70
90for
F0204
20890
MBM29PL3200BE70
MBM29PL3200BE90
MBM29PL3200TE70
MBM29PL3200TE90
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PDF
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DDR2-667
Abstract: EM44AM1684LBC EM44AM1684LBC-37F EM44AM1684LBC-3F EM44AM1684LBC-5F BGA84
Text: eorex EM44AM1684LBC 256Mb 4Mx4Bank×16 Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ=1.8V ± 0.1V. • All inputs and outputs are compatible with SSTL_18 interface. • Fully differential clock inputs (CK,/CK) operation. • 4 Banks
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Original
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EM44AM1684LBC
256Mb
BGA-84
DDR2-667
EM44AM1684LBC
EM44AM1684LBC-37F
EM44AM1684LBC-3F
EM44AM1684LBC-5F
BGA84
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT M14D5121632A 2H DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z Internal pipelined double-data-rate architecture; two data access per clock cycle
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Original
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M14D5121632A
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PDF
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TP33 APEM Push Button Cap
Abstract: CF SOP-6 RP50 D-Sub 44-pin pinout PZC10SAAN Tp33 Apem l8 DT26 smd female PCB connector 9pin d-sub PDIUSB11A LM2596S-ADJ
Text: MCF5275EVB User’s Manual Devices Supported: MCF5275 MCF5275L MCF5274 MCF5274L MCF5275EVBUM Rev. 1.0 10/2004 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130
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MCF5275EVB
MCF5275
MCF5275L
MCF5274
MCF5274L
MCF5275EVBUM
O-263-5
O-220-3-SM
FOXS/250F-20
TP33 APEM Push Button Cap
CF SOP-6
RP50
D-Sub 44-pin pinout
PZC10SAAN
Tp33 Apem l8
DT26 smd
female PCB connector 9pin d-sub
PDIUSB11A
LM2596S-ADJ
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PDF
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KB3920
Abstract: kb3926 mcp67m quanta at1 DQ15 Discrete Nvidia MCP67 kb3926 d3 GFX27M rtl8211b MCP67d
Text: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2
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Original
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Turion64
5W/35W
667mhz
667mhz
NB8M-64bit
RJ-45
PC112
330U/2V/9m
330U/2V/9m
KB3920
kb3926
mcp67m
quanta at1
DQ15 Discrete Nvidia
MCP67
kb3926 d3
GFX27M
rtl8211b
MCP67d
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PDF
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20890
Abstract: MARKING HRA
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0304
20890
MARKING HRA
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PDF
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DSA0024691
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-5E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each
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Original
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DS05-20890-5E
MBM29PL3200TE70/90
MBM29PL3200BE70/90
MBM29PL3200TE/BE
90-pin
84-ball
F0304
DSA0024691
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PDF
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