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    BGA84

    Abstract: 74HC573 74HC573 DATASHEET DIP-40
    Text: AE-B84-SP3 Page 1 of 2 AE-B84-SP3 DIP40/BGA84 specialized adapter for FLASH memory. Device package dimensions: 11.6 x 8.0 x 1.0 mm, 0.8 mm pitch. Click the programmer model below to get an appropriate list of the devices supported by the adapter: z z ChipProg-40


    Original     		PDF AE-B84-SP3 DIP40/BGA84 ChipProg-40 ChipProg-48, DIP-40 BGA-84 74HC573 150pF BGA84 74HC573 DATASHEET DIP-40

    BGA84

    Abstract: 74HC573 BGA-84 diode b84 DIP-40 bga 84
    Text: AE-B84-SP1 Page 1 of 2 AE-B84-SP1 DIP40/BGA84 specialized adapter for FLASH memory. Device package dimensions: 11.6 x 8.0 x 1.2 mm, 0.8 mm pitch. Click the programmer model below to get an appropriate list of the devices supported by the adapter: z z z ChipProg+


    Original     		PDF AE-B84-SP1 DIP40/BGA84 ChipProg-40 ChipProg-48, DIP-40 BGA-84 74HC573 150pF BGA84 BGA-84 diode b84 DIP-40 bga 84

    Untitled

    Abstract: No abstract text available
    Text: ESMT M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z


    Original     		PDF M14D5121632A

    M14D1G166

    Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt
    Text: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D1G1664A M14D1G166 m14d1g M14D1G1664A m14d1g16 DDRII esmt

    ene kb3926qf c0

    Abstract: ene kb3926qf kb3926 ene kb3926qf d2 kb3926qf d2 kb3926qf c0 IDT92HD RT8206B AT5231 OZ8119
    Text: 1 2 3 4 5 7 8 Jones/Cujo BLOCK DIAGRAM PCB STACK UP 8L Dis. LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /35W PAGE 3,4 LAYER 3 : IN2 01 CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 4 : SGND1


    Original     		PDF 318MHz RJ-45 ALPRS355B MLF64PIN 27MHz PR156 15VALW PDTC144EU PR152 PR153 ene kb3926qf c0 ene kb3926qf kb3926 ene kb3926qf d2 kb3926qf d2 kb3926qf c0 IDT92HD RT8206B AT5231 OZ8119

    ene kb3926qf

    Abstract: ene kb3926qf d2 KB3926QF A1 ene kb3926qf c0 kb3926qf c0 kb3926qf d2 kb3926 apl*5606 92HP61B7X5 AT5231
    Text: 1 2 3 4 5 7 8 01 UT7D BLOCK DIAGRAM PCB STACK UP 8L CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /45W PAGE 3,4 LAYER 3 : IN1 CLK_CPU_BCLK,CLK_CPU_BCLK# LAYER 4 : SVCC CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# DREFCLK,DREFCLK#


    Original     		PDF 318MHz RJ-45 ALPRS355B MLF64PIN 27MHz PAG209 1U/10V PC206 PR199 PR200 ene kb3926qf ene kb3926qf d2 KB3926QF A1 ene kb3926qf c0 kb3926qf c0 kb3926qf d2 kb3926 apl*5606 92HP61B7X5 AT5231

    kb3926

    Abstract: kb3926 d3 MAX8774 MCP67D Maxim MAX8774 kb3920 short stop 12v p18 30a kb3926 d2 ac30 c51 100v 10p quanta at1
    Text: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2


    Original     		PDF Turion64 5W/35W 667mhz 667mhz NB8M-64bit RJ-45 PC112 330U/2V/9m 330U/2V/9m kb3926 kb3926 d3 MAX8774 MCP67D Maxim MAX8774 kb3920 short stop 12v p18 30a kb3926 d2 ac30 c51 100v 10p quanta at1

    msi G31 crb

    Abstract: sc413 2pc501 nvidia nb8 vga board APL5912 MS-1636 nvidia BGA OZ711SP1-1 10n400 Socket AM2
    Text: A B C D E MS-1636 VER : 1.0 +3V , +5V TPI51120 DC JACK & Selector Merom Page 3,4 Page 40 1 2 3 1 +VTT 1.05V 01:BLOCK DIAGRAM 02:PLATFORM 03:Merom-1 CPU (HOST BUS) 04:Merom-2 CPU (POWER/GND) 05:i965PM-1 (HOST) CRT 06:i965PM-2 (DMI/VGA) RGB 07:i965PM-3 (DDR2)


    Original     		PDF MS-1636 TPI51120 i965PM-1 i965PM-2 i965PM-3 i965PM-4 i965PM-5 i965PM-6 32MX16 msi G31 crb sc413 2pc501 nvidia nb8 vga board APL5912 nvidia BGA OZ711SP1-1 10n400 Socket AM2

    kb3926

    Abstract: RTM875T-606 RTM875 G3-64 820p fcbga G966-25 cntr cd1 100 1p0 Quanta AT3 at3 block diagram KB3920 KB3926 AT5 C833
    Text: 1 2 PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 A 3 04-06-08-12-F- 4 0402 footprint 0603 footprint 0805 footprint 1206 footprint 1% tolerance 5 6 7 8 AT3 BLOCK DIAGRAM CPU THERMAL SENSOR CPU Merom LAYER 3 : IN1 01 14.318MHz A PAG 5 LAYER 4 : IN2 478P uPGA /35W


    Original     		PDF 04-06-08-12-F-- 318MHz ICS9LPRS355AGLFT 64pinsTSSOP RJ-45 NVDI37 GPIO40 GPIO41 GPIO42 GPIO52 kb3926 RTM875T-606 RTM875 G3-64 820p fcbga G966-25 cntr cd1 100 1p0 Quanta AT3 at3 block diagram KB3920 KB3926 AT5 C833

    SSOP-90

    Abstract: MBM29PL3200BE MBM29PL3200TE fbga84
    Text: 1 : 352'8&76 0%03/7(%(  • • • 32 M-Bit Page Mode Flash Memory with x16/x32-Bit Bus Width: MBM29PL3200TE/BE • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •


    Original     		PDF x16/x32-Bit MBM29PL3200TE/BE 32-bit SSOP-90, FBGA-84 ns/35 MBM29PL3200BE ns/90 MBM29PL3200TE SSOP-90 MBM29PL3200BE MBM29PL3200TE fbga84

    M14D5121632A

    Abstract: No abstract text available
    Text: ESMT M14D5121632A 2K DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D5121632A M14D5121632A

    BGA676

    Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
    Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18


    Original     		PDF BGA16A1ATTERNS BGA676 BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X

    EM44BM1684LBA

    Abstract: bga 84 BGA84 BGA-84 DDR2-667 em44bm1684lba-3f
    Text: eorex EM44BM1684LBA 512Mb 8Mx4Bank×16 Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ=1.8V ± 0.1V. • All inputs and outputs are compatible with SSTL_18 interface. • Fully differential clock inputs (CK,/CK) operation. • 4 Banks


    Original     		PDF EM44BM1684LBA 512Mb BGA-84 EM44BM1684LBA bga 84 BGA84 DDR2-667 em44bm1684lba-3f

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M14D5121632A (2K) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D5121632A

    Untitled

    Abstract: No abstract text available
    Text: ESM T M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D1G1664A

    M14D5121632A

    Abstract: M14D512
    Text: ESMT Preliminary M14D5121632A (2T) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D5121632A M14D5121632A M14D512

    Untitled

    Abstract: No abstract text available
    Text: ESM T M14D5121632A 2H Automotive Grade DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D5121632A

    20890

    Abstract: MBM29PL3200BE70 MBM29PL3200BE90 MBM29PL3200TE70 MBM29PL3200TE90
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-3E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each


    Original     		PDF DS05-20890-3E MBM29PL3200TE70/90 MBM29PL3200BE70/90 MBM29PL3200TE/BE 90-pin 84-ball MBM29PL3200TE70 MBM29PL3200BE70 90for F0204 20890 MBM29PL3200BE70 MBM29PL3200BE90 MBM29PL3200TE70 MBM29PL3200TE90

    DDR2-667

    Abstract: EM44AM1684LBC EM44AM1684LBC-37F EM44AM1684LBC-3F EM44AM1684LBC-5F BGA84
    Text: eorex EM44AM1684LBC 256Mb 4Mx4Bank×16 Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ=1.8V ± 0.1V. • All inputs and outputs are compatible with SSTL_18 interface. • Fully differential clock inputs (CK,/CK) operation. • 4 Banks


    Original     		PDF EM44AM1684LBC 256Mb BGA-84 DDR2-667 EM44AM1684LBC EM44AM1684LBC-37F EM44AM1684LBC-3F EM44AM1684LBC-5F BGA84

    Untitled

    Abstract: No abstract text available
    Text: ESMT M14D5121632A 2H DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z Internal pipelined double-data-rate architecture; two data access per clock cycle


    Original     		PDF M14D5121632A

    TP33 APEM Push Button Cap

    Abstract: CF SOP-6 RP50 D-Sub 44-pin pinout PZC10SAAN Tp33 Apem l8 DT26 smd female PCB connector 9pin d-sub PDIUSB11A LM2596S-ADJ
    Text: MCF5275EVB User’s Manual Devices Supported: MCF5275 MCF5275L MCF5274 MCF5274L MCF5275EVBUM Rev. 1.0 10/2004 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130


    Original     		PDF MCF5275EVB MCF5275 MCF5275L MCF5274 MCF5274L MCF5275EVBUM O-263-5 O-220-3-SM FOXS/250F-20 TP33 APEM Push Button Cap CF SOP-6 RP50 D-Sub 44-pin pinout PZC10SAAN Tp33 Apem l8 DT26 smd female PCB connector 9pin d-sub PDIUSB11A LM2596S-ADJ

    KB3920

    Abstract: kb3926 mcp67m quanta at1 DQ15 Discrete Nvidia MCP67 kb3926 d3 GFX27M rtl8211b MCP67d
    Text: 1 2 PCB STACK UP LAYER 2 : SGND1 PG 36,37 BATT CHARGER LAYER 3 : IN1 LAYER 4 : IN2 DDRII-SODIMM1 LAYER 5 : VCC 4 AC/BATT CONNECTOR RUN POWER SW LAYER 1 : TOP A 3 5 6 PG 34 PG 38 DC/DC +3VSUS +5VSUS DDRII 667mhz LAYER 7 : SGND2 A PG 33 AMD Socket S1 638P DDRII-SODIMM2


    Original     		PDF Turion64 5W/35W 667mhz 667mhz NB8M-64bit RJ-45 PC112 330U/2V/9m 330U/2V/9m KB3920 kb3926 mcp67m quanta at1 DQ15 Discrete Nvidia MCP67 kb3926 d3 GFX27M rtl8211b MCP67d

    20890

    Abstract: MARKING HRA
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		PDF F0304 20890 MARKING HRA

    DSA0024691

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-5E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each


    Original     		PDF DS05-20890-5E MBM29PL3200TE70/90 MBM29PL3200BE70/90 MBM29PL3200TE/BE 90-pin 84-ball F0304 DSA0024691