MTP2955V
Abstract: transistor W66 WD62 7w66 D665 fairchild mosfets MTP2955V/SSP35n03
Text: MTP2955V* P-Channel Enhancement Mode Field Effect Transistor Features General Description -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
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MTP2955V*
MTP2955V
transistor W66
WD62
7w66
D665
fairchild mosfets
MTP2955V/SSP35n03
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7w66
Abstract: 7121 MOSFET 7121 D665 MTP3055V transistor W66 D666
Text: MTP3055V N-Channel Enhancement Mode Field Effect Transistor Features General Description 12 A, 60 V. RDS ON = 0.150 Ω @ VGS = 10 V This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
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MTP3055V
7w66
7121
MOSFET 7121
D665
MTP3055V
transistor W66
D666
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Untitled
Abstract: No abstract text available
Text: MTP2955V P-Channel Enhancement Mode Field Effect Transistor Features General Description -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
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MTP2955V
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FDP7060
Abstract: NDP4060L da2aa CBVK741B019 EO70 MTP2955V TO220 Semiconductor Packaging 9852
Text: MTP2955V P-Channel Enhancement Mode Field Effect Transistor Features General Description -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
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MTP2955V
FDP7060
NDP4060L
da2aa
CBVK741B019
EO70
MTP2955V
TO220 Semiconductor Packaging
9852
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IR 9852
Abstract: 7w66 MTP2955V/SSP35n03
Text: MTP2955V* P-Channel Enhancement Mode Field Effect Transistor Features General Description -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
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MTP2955V
MTP2955V*
IR 9852
7w66
MTP2955V/SSP35n03
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IRFR9024
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024*
IRFR9024
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a7w 57
Abstract: a7w transistor
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 12 A, 60 V. RDS ON = 0.18 Ω @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC
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MTD3055VL
a7w 57
a7w transistor
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MTD2955V
Abstract: transistor WT9 a9hv
Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V*
MTD2955V
transistor WT9
a9hv
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a7w transistor
Abstract: a7w 57 transistor a7w
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V*
a7w transistor
a7w 57
transistor a7w
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a9hv
Abstract: MTD3055VL
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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MTD3055VL
a9hv
MTD3055VL
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MTD3055V
Abstract: fairchild mosfets
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V*
MTD3055V
fairchild mosfets
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3055VL
Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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MTD3055VL
MTD3055VL
O-252
3055VL
a9hv
transistor WT9
u6 transistor
AYRA
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Untitled
Abstract: No abstract text available
Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
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Si4532DY
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D665
Abstract: SI4532DY w992
Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very
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Si4532DY
D665
w992
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MTD2955
Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
MTD2955
CBVK741B019
F63TNR
FDD6680
MTD2955V
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Untitled
Abstract: No abstract text available
Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V
MTD3055V*
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Untitled
Abstract: No abstract text available
Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
MTD2955V*
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Mosfet FDD
Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD3055V
Mosfet FDD
CBVK741B019
F63TNR
FDD6680
MTD3055V
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DSAS 13-0
Abstract: d92 02 a9hv
Text: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024
DSAS 13-0
d92 02
a9hv
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a9hv
Abstract: No abstract text available
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
a9hv
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59VIII
Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII
Text: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at
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BCY57
BCY58VII
BCY58VIII
59VIII
100min.
78VII
78VIII
BCY79VII
79VIII
BFW10
59VIII
79-IX
BCY 68
BCY58X
BCY 62
59vii
BHARAT elek
BCY58VIII
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sc59
Abstract: BH ar transistor 2PB709R 2PB709S 2PD601A lem HA 2PB709 2PB709A 2PB709AQ 2PB709Q
Text: Philips Semiconductors H 7 1 1 0 fi2 b 0 G7 D0 1 S b 4 fi IH P H IN PNP general purpose transistor FEATURES Objective specification 2PB709; 2PB709A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. & DESCRIPTION a PNP transistor in a plastic SC59
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0G70D15
2PB709;
2PB709A
2PD601
2PD601A
MSA314
2PB709Q:
2PB709R:
2PB709S:
2PB709AQ:
sc59
BH ar transistor
2PB709R
2PB709S
lem HA
2PB709
2PB709A
2PB709AQ
2PB709Q
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LT1817 transistor
Abstract: LT1817
Text: MO TO RO LA SC X ST RS /R F MbE D • b3fc>72S4 001450*5 fl ■ HOTt MOTOROLA T -3 ? r0 5 m S E M IC O N D U C T O R m— mm TECHNICAL DATA LT1817 The RF Line N P N S ilic o n H igh F re q u e n c y T ra n s is to r f j = 1000 MHz MIN HIGH FREQUENCY TRANSISTOR
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LT1817
14E1G
C01LECT0R-8ASE
LT1817 transistor
LT1817
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tpv394a
Abstract: RF TV TRANSMITTER tv transmitter amplifier circuit arco 404 Arco 423 VHF transmitter circuit arco 403
Text: 4bE D flOTOROLA SC XSTRS/R F MOTOROLA • I SEMICONDUCTOR ^ b3b?254 OG'iSBll 4 ■ HOTb T=-53-OB TECHNICAL DATA The RF Line TPV394A VH F Linear Power Transistor . . . d e s ig n e d s p e c ific a lly fo r ban d III T V tra n s p o s e rs a n d tra n s m itte r a m p lifie rs. The
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0GT5311
TPV394A
TPV394A
244C-01,
b3b72S4
T-33-05
RF TV TRANSMITTER
tv transmitter amplifier circuit
arco 404
Arco 423
VHF transmitter circuit
arco 403
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