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    BH RV TRANSISTOR Search Results

    BH RV TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BH RV TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    temic 0675

    Abstract: BH RV transistor BH RV debouncing relay contact debounce time BH Re transistor water pump U2640B z-diode 533 zener diode 328
    Text: U2640B Intermittent- and Wipe/Wash Control for Wiper Systems With the U264xB, TEMIC Semiconductors developed a family of intermittent- and wipe/wash control circuits for windshield or backlite wiper systems with identical basic functions. The circuit design provides the possibility to


    Original     		PDF U2640B U264xB, D-74025 02-Dec-97 temic 0675 BH RV transistor BH RV debouncing relay contact debounce time BH Re transistor water pump U2640B z-diode 533 zener diode 328

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		PDF Si4532DY

    2N7073

    Abstract: No abstract text available
    Text: SILICONIX INC 33E » f i r Si fieo n ix • 0854735 001L.D52 ö ISIX 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 'TAr Id (A) 400 0.55 9.0 1 DRAIN 2 SOURCE 3 GATE Case Isolated


    OCR Scan     		PDF flfi5473S 2N7073 O-254AA

    BH RV transistor

    Abstract: F6 sot223
    Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3- FEBRUARY 1995_ FEATURES * Low saturation voltage CO M PLEM ENTARY T Y P E - FZT753 P A R T M A R K IN G D E T A IL - FZT653 ABSOLUTE M A X IM U M RATINGS. SY M BO L VALUE


    OCR Scan     		PDF OT223 FZT753 FZT653 BH RV transistor F6 sot223

    BH RV transistor

    Abstract: No abstract text available
    Text: HOA1875 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile housing • Wide operating temperature range -55°C to +100°C • 0.200 in.(5.08 mm) slot width DESCRIPTION The HOA1875 series consists of an infrared emitting


    OCR Scan     		PDF HOA1875 HOA1875 HOA1875-001, HOA1875-003) SE1450, SD1440, SD1410. BH RV transistor

    transistor tt 2222

    Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
    Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56

    CD4077B Family specifications

    Abstract: 74LS CD4030A CD4070B CD4077B MC14070B MC14077B cd4070BCN
    Text: MR 3 1 >992 March 1992 CD4070BM/CD4070BC Quad 2-Input EXCLUSIVE-OR Gate CD4077BM/CD4077BC Quad 2-Input EXCLUSIVE-NOR Gate General Description Features Employing complementary MOS CMOS transistors to achieve wide power supply operating range, low power con­


    OCR Scan     		PDF CD4070BM/CD4070BC CD4077BM/CD4077BC CD4070BM/BC CD4077BM/BC CD4077B Family specifications 74LS CD4030A CD4070B CD4077B MC14070B MC14077B cd4070BCN

    TRANSISTOR A3

    Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
    Text: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial


    OCR Scan     		PDF bbS3T31 BLW60 TRANSISTOR A3 transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10

    TRANSISTOR BH RW

    Abstract: BH RV transistor h0a1180 0a1180
    Text: H 0A1180 Reflective Sensor FEATU RES • C h o ice of phototransistor or photodarlington output • High sensitivity • W ide operating tem perature range -55°C to +100°C • 12.0 in.(305 mm) min. 28 A W G P V C insulated wire leads D E S C R IP T IO N


    OCR Scan     		PDF 0A1180 TRANSISTOR BH RW BH RV transistor h0a1180 0a1180

    2n2222 texas instruments

    Abstract: BY206 TIPL757 TIPL757A n-p-n r.f. power transistors npn 1000V 15A D037D
    Text: TEX AS I NST R -COPTO} ta DE JflTblTEt. D D 3 7 D 4 4 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 37044 D f ,7""- 3S-/S“ TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS i electrical characteristics at 25 ° C case temperature (unless otherwise noted) - PARAM ETER


    OCR Scan     		PDF TIPL757, TIPL757A TIPL757 TIPL757A TIPL760, TIPL760A TIPL761 2n2222 texas instruments BY206 n-p-n r.f. power transistors npn 1000V 15A D037D

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 1147 A ISSUE 1 - JANUARY 1997_*" FEATURES * V c e o = -12V * 4 A m p C o n tin u o u s C u rre n t * 2 0 A m p p u ls e C u rre n t * L o w S a tu ra tio n V o lta g e


    OCR Scan     		PDF ti516) Ti7057fl

    d00030

    Abstract: 2SA1741 T108 BH RV transistor
    Text: / n° 7 - Silicon P o w er Transistor 2 S A 1 7 4 1 I i f f l 2 S A 1 74 1 ^ T L o w V C E s a t T ' h p E 3- — 9 < T ) t '< i: tz ' - t 'C O W ^ ^ iO L T ^ S T 'D L T H C / D J ê C a ê t i ^ ^ ^ h ' s 9 ÿ > v ? X * ? T ? t j fl- J fê y - 10.0 + 0 .3


    OCR Scan     		PDF 2SA1741 d00030 2SA1741 T108 BH RV transistor

    Untitled

    Abstract: No abstract text available
    Text: SEC pPD72002 Ordering Information 44-Pln P lastic QFP Package Part Number fiPD72002CZ-11 40-pln plastic DIP pPD72002GB-113B4 44-pln plastic QFP jttPD72002LM-11 44-pin plastic leaded chip carrier PLCC Q I k | < l i ic/> 2 il t l b lE lg z lo l o ld l o O is 13 IS la. la.


    OCR Scan     		PDF pPD72002 44-Pln fiPD72002CZ-11 40-pln pPD72002GB-113B4 jttPD72002LM-11 44-pin

    MAX038CPP

    Abstract: MC145 MAX038 MAX038C MAX038CWP MAX038E MAX038EPP MAX038EWP cbu 4j
    Text: y k iy jx iy i/ i a r . m B i / i z i ; - ? M A X 038IS5H Ì\frafifi*IS^a^Jvpglcfip^rc. B ffift, 5, B ^BB2.5V A '> K ^ '-p '7 ^ B E U m m m J z iy ^ y m z ^ - D Z o. 1 h z ~ 2 0 m h z s m s


    OCR Scan     		PDF 20MHz 200ppm/t; MAX038CPP MAX038CWP MAX038C/D MAX038EPP MAX038EWP 383MHz0g| MX754 MAX038SYNC MC145 MAX038 MAX038C MAX038E cbu 4j

    transistor tt 2222

    Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
    Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 711002b BLY87C transistor tt 2222 Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060

    PA505T

    Abstract: oasis T460
    Text: NEC M O S M O S Field Effect Transistor ¿¿PA505T M ¿¿PA505T Ü , MOS F E T ^ O S F E T m 2@ M 1 L ^ ^ Î - 5 k m ° > 2 (W -ÎÈ L • S § mm) 0.32 ¥ 8 î t o S C - 59 ^ ° > y ^ - ^ t [ 5] t + f - 'f X ^ 7 y - ÿ il 0 .9 5 .0 . 9 5 . 3 > 7 ° ij y > ^ ij ¿0 M O S F E T £ 1


    OCR Scan     		PDF uPA505T PA505T oasis T460

    Untitled

    Abstract: No abstract text available
    Text: MH88630 Central Office Interface LS/GS Preliminary Information Features _ ISSUE 7_ April 1995 • T ransform erless 2-4 W ire conversion • Line state detection outputs: O rdering Inform ation M H88630 40-Pin DIL Package


    OCR Scan     		PDF MH88630 H88630 40-Pin MH88630 b24T370

    am26c321

    Abstract: AM26C32 AM26C32C AM26C32CNSLE AM26C32I AM26LS32 RS-422-A D3634 IRAMY
    Text: AM26C32C, AM26C32I QUADRUPLE DIFFERENTIAL LINE RECEIVERS _^ _ * Meets EIA Standards RS-422-A, RS-423-A, and CCITT Recommendation V.11 * Low Power, lcc = 9 mA Typ * ± 7-V Common-Mode Range With ±200-mV Sensitivity


    OCR Scan     		PDF fAM26C32C, AM26C32I SLLS104B- D3634, 1990-REVISED RS-422-A, RS-423-A, 200-mV AM26LS32 AM26C32C am26c321 AM26C32 AM26C32CNSLE AM26LS32 RS-422-A D3634 IRAMY

    DG37

    Abstract: SV 37015 U/25/20/TN26/15/850/SV 37015 TIPL751A TIPL751 BY206 DG37D1S
    Text: "bH DD37011 0 TEXAS INSTR -COPTO} 8961726 TEXAS INSTR <OPTO> _ ! 62C 37011 TIPL751, TIPL751A N-P-N SILICON POWER TRANSISTORS O C TO B E R 1 9 8 2 - R E V IS E D O C TO B E R 1 9 8 4 • 120 W at 2 5 ° C Case Temperature • 4 A Continuous Collector Current


    OCR Scan     		PDF lbl75b DD37Q11 TIPL751, TIPL751A TIPL751 TIPL751A TIPL751 DQ37017 DG37 SV 37015 U/25/20/TN26/15/850/SV 37015 BY206 DG37D1S

    BLY88A

    Abstract: A41E BLY88 W1032 Paver Components
    Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF DQ57R27 BLY88A to-16 BLY88A A41E BLY88 W1032 Paver Components

    transistor MWTA 06

    Abstract: transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580
    Text: 7 * — • S 5 /— H Mos M O S Field Effect Transistor 2 P 2 S J 202 ü ^ ' y f ' J M O S * m o s Ì ' ò £ ' ^ W g n t i « f F E T F E T % € J ± f ë € i t ë 2 {@ i m & T m m x - è , m W l? ~ ?<F> P 4 V T R : ì ' ' f 2 tb , è & g t t z > & %


    OCR Scan     		PDF 2SJ202 2SK1580 transistor MWTA 06 transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580

    Untitled

    Abstract: No abstract text available
    Text: HOA1872 Transmissive Sensor FEATU RES • C h o ice of phototransistor o r photodarlington output J m , • T h ree sensitivity ranges • C h o ic e of m etal can packag e or plastic m olded com ponents Jm F J W • 0 .100 in. 2.54 mm slot width INFRA-14.TIF


    OCR Scan     		PDF HOA1872 HOA1872-001, HOA1872-OÃ HOA1872-011, 0D22b7M

    lf351

    Abstract: Lf351 equivalent
    Text: ZN559 LOW COST 8-BIT LATCHED INPUT MONOLITHIC D-A CONVERTER The ZN559 is a low cost 8-bit D-A converter with input latches to facilitate updating from a data bus. The latch is transparent when enable is LOW and the data is held when enable is taken HIGH. The device has a precision 2.5V


    OCR Scan     		PDF ZN559 ZN559 lf351 Lf351 equivalent

    BLY87A

    Abstract: transistor bly87a C 1008 y transistor RF POWER TRANSISTOR NPN T-33-07 a 1009
    Text: PHILIPS 41ED H 7 1 1 0 0 2 b G 027C 1G 3 INTERNATIONAL HPHIN BLY87A M A I N T E N A N C E TYPE T -3 3 -0 7 V.H.F. POWER TRANSISTOR N -P -N silico n p la n a r e p ita x ia l tra n s is to r f o r use in class-A , B and C o p e ra te d m o b ile and m ilit a r y


    OCR Scan     		PDF 711002b G027C1G3 BLY87A T-33-07 BLY87A transistor bly87a C 1008 y transistor RF POWER TRANSISTOR NPN T-33-07 a 1009