diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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CM1600HB-34H
Abstract: SWITCHING TRANSISTOR 144
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HB-34H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules
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CM1600HB-34H
CM1600HB-34H
SWITCHING TRANSISTOR 144
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AT41500
Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be
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AT-41500
AT-41500
AT-41500-GP4
AV01-0077EN
AT41500
transistor zo 109
TRANSISTOR zo 109 ma
CHIP TRANSISTOR
TRANSISTOR 12 GHZ
3 w RF POWER TRANSISTOR NPN
50/TRANSISTOR zo 109 ma
transistor Gigahertz
AT-41586
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CM1600HC-34H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules
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CM1600HC-34H
CM1600HC-34H
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"induction heating" circuit
Abstract: CM1200HC-34H transistor su 110
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1200HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules
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CM1200HC-34H
"induction heating" circuit
CM1200HC-34H
transistor su 110
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CM2400HC-34H
Abstract: TRANSISTOR Q 667 17800
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM2400HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules
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CM2400HC-34H
CM2400HC-34H
TRANSISTOR Q 667
17800
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CM1800HC-34H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1800HC-34H PRE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE
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CM1800HC-34H
CM1800HC-34H
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CM400DY-50H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM400DY-50H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H
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CM400DY-50H
CM400DY-50H
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AT-41586
Abstract: AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma
Text: AT-41586 Low Cost General Purpose Transistors Data Sheet Description Features Avago’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The
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AT-41586
AT-41586
5965-8908E
5989-2651EN
AT-41586-BLK
AT-41586-TR1
S21E
TRANSISTOR zo 109 ma
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"Bipolar Transistor"
Abstract: TRANSISTOR 12 GHZ TRANSISTOR 80 GHZ 136.21 AT-42010 TRANSISTOR 200 GHZ UHF transistor GHz S21E
Text: AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron
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AT-42010
AT-42010
5965-8910E
AV01-0022EN
"Bipolar Transistor"
TRANSISTOR 12 GHZ
TRANSISTOR 80 GHZ
136.21
TRANSISTOR 200 GHZ
UHF transistor GHz
S21E
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62003F
Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F
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40Series,
226Devices)
62003P/PA
2003A
2004A
62003F/FB/
62004F/FB/
16bit
TB62705BF
DIP24
62003F
62004f
62004A
TD62801P
62004AP
A 107 transistor
TD62XXX
62c852
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ZO 103 MA 75 623
Abstract: No abstract text available
Text: H E W L E T T - P A C K A R D / C M PN TS m blE D • 4 4 4 7 5A 4 0 0 0 ^ 7 6 0 t.E7 H H P A AT-01600 Up to 4 GHz General Purpose Silicon Bipolar Transistor Chip H EW LETT PACKARD Chip Outline Features 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz
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AT-01600
ZO 103 MA 75 623
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2500ECL
Abstract: Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca
Text: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.
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BR334/D
2500ECL
Motorola Bipolar Power Transistor Data Double Die
IC 566 function generator
HCA62A17
CMOS 4032
1987 Micron Technology
Micron NAND
bca 1st
motorola ECL
motorola mca
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AT-60535
Abstract: No abstract text available
Text: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz
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0QGbS13
AT-60535
AT-60535
310-371-8717or310-371-8478
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Untitled
Abstract: No abstract text available
Text: W fw lH E W L E T T mL'HM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Description Features The MSA-0886 is a high perfor mance silicon bipolar Monolithic Microwave Integrated Circuit 32.5 dB Typical at 0.1 GHz MMIC housed in a low cost,
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MSA-0886
MSA-0886
Available111
5965-9547E
G01flb3S
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MSA-0886
Abstract: MSA0886-BLK
Text: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features Description • Usable Gain to 5.5 GHz • High Gain: 3 2.5 dB Typical at 0.1 GHz 2 2 .5 dBTypicalat 1.0 GHz • Low Noise Figure: 3.3 dBTypicalat 1.0 GHz
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MSA-0886
MSA-0886
MSA0886-BLK
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features D escription • Usable Gain to 5.5 GHz • High Gain: The MSA-0886 is a high perfor m ance silicon bipolar Monolithic Microwave Integrated Circuit
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MSA-0886
MSA-0886
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npn pnp transistor bipolar cross reference
Abstract: PN diode pnp low power fast switching transistor high voltage fast switching npn transistor npn, transistor, sc 109 C Field Effect Transistor pnp pn junction diode Solitron Devices pnp, 200 V, 20A
Text: sjfnlitrnn_ a tm , C H IP D E S C R IP T IO N & P E R F O R M A N C E C U R V E S Devices. Inc. Chip Type Index. .l
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Untitled
Abstract: No abstract text available
Text: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with
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AT-42010
AT-42010
Rj/50
DD17bSfl
M4475fl4
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C945C
Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high
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AT-32063
OT-363
SC-70)
AT-32063
OT-363
C945C
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PJ 0416 1v
Abstract: PJ 1179
Text: What H E W LET T 1"KM PA C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Perform ance at 2.7 V, 5 mA:
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AT-32032
OT-323
SC-70)
SC-70
OT-323)
PJ 0416 1v
PJ 1179
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Untitled
Abstract: No abstract text available
Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical PldB at 2.0 GHz 20.5dBmTypicalP1 fflat4.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz
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AT-42010
AT-42010
Rn/50
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Untitled
Abstract: No abstract text available
Text: T hat H E W IT T mL'ftm PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz
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AT-41470
AT41470
AT-41470
Q017b3fl
DQ17b3ti
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Untitled
Abstract: No abstract text available
Text: HE WLE TT-PACKARD/ CMPNTS blE » • 4447Sfl4 OODTflm fibfl IHPA AT-60100 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip rm H EW LETT f t X l PACKARD Chip Outline1 Features • Low Bias Current Operation • Low Noise Figure: 1.9 dB typical at 2.0 GHz
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4447Sfl4
AT-60100
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