GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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microcontroller based inverter
Abstract: microchip inverter laser diode samsung microchip inverter application notes DK-2750 TB061 200B 2.5v zener
Text: TB061 Bipolar PICmicro Power Systems SELF DRIVEN CHARGE PUMP Author: Joseph Julicher Microchip Technology Inc. BIPOLAR PICMICRO POWER SYSTEMS Introduction On occasion, it is convenient to power a PICmicro microcontroller from a bipolar supply. This allows an
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TB061
RS-232
D-85737
DS91061A-page
microcontroller based inverter
microchip inverter
laser diode samsung
microchip inverter application notes
DK-2750
TB061
200B
2.5v zener
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transistor truth table
Abstract: small signal high frequency bipolar transistor IC of XOR GATE mosfet controlled thyristor high power bipolar transistor selection gate voltage control circuit of a power amplifier gate voltage control circuit dc voltage SCR gate Control IC IGBTs Transistors applications of mos controlled thyristor
Text: BASIC CIRCUIT ELEMENT REFERENCE CARD Discrete Devices Collector IGBT Insulated Gate Bipolar Transistor Gate A combination of bipolar and MOS technology, using voltage to turn on the device and bipolar output charactristics. IGBTs have higher current density handling capability
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Untitled
Abstract: No abstract text available
Text: A1202 and A1203 Continuous-Time Bipolar Switch Family Description Features and Benefits The Allegro A1202 and A1203 Hall-effect bipolar switches are next-generation replacements and extension of the popular Allegro A3133 and A3132 bipolar switch product line. Overall,
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A1202
A1203
A1203
A3133
A3132
A120x
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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Untitled
Abstract: No abstract text available
Text: A1205 Continuous-Time Bipolar Switch Description Features and Benefits The Allegro A1205 Hall-effect bipolar switch is a nextgeneration replacement and extension of the popular Allegro A3134 bipolar switch. The A1205 has identical specifications as the A1201 but is recommended for applications that require
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A1205
A1205
A3134
A1201
A1204
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MGP2N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching
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MGP2N60D/D
MGP2N60D
220AB
MGP2N60D
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MGP2N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching
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MGP2N60D/D
MGP2N60D
220AB
MGP2N60D
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Untitled
Abstract: No abstract text available
Text: A3230 Chopper-Stabilized Hall-Effect Bipolar Switch GND Package LH, 3-pin Surface Mount 3 1 3 2 VCC VOUT 2 1 Package UA, 3-pin SIP The A3230 Hall-effect sensor is a temperature stable, stress-resistant bipolar switch. This sensor is the most sensitive Hall-effect device in the Allegro bipolar
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A3230
A3230
A3230-DS
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Untitled
Abstract: No abstract text available
Text: A3230 Chopper-Stabilized Hall-Effect Bipolar Switch GND Package LH, 3-pin Surface Mount 3 1 3 2 VCC VOUT 2 1 Package UA, 3-pin SIP The A3230 Hall-effect sensor is a temperature stable, stress-resistant bipolar switch. This sensor is the most sensitive Hall-effect device in the Allegro bipolar
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A3230
A3230
A3230-DS
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A3230LUA-T
Abstract: A3230-DS allegro 3 PIN hall effect sensor Understanding Bipolar Hall-Effect Sensors Allegro Hall-Effect ICs A3230 A3230ELHLT A3230ELHLT-T A3230EUA A3230EUA-T
Text: A3230 Chopper-Stabilized Hall-Effect Bipolar Switch GND Package LH, 3-pin Surface Mount 3 1 3 2 VCC VOUT 2 1 Package UA, 3-pin SIP The A3230 Hall-effect sensor is a temperature stable, stress-resistant bipolar switch. This sensor is the most sensitive Hall-effect device in the Allegro bipolar
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A3230
A3230
A3230-DS
A3230LUA-T
A3230-DS
allegro 3 PIN hall effect sensor
Understanding Bipolar Hall-Effect Sensors
Allegro Hall-Effect ICs
A3230ELHLT
A3230ELHLT-T
A3230EUA
A3230EUA-T
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ZTX653 equivalent
Abstract: ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A
Text: SELECTION GUIDE Discrete semiconductors Bipolar transistors | Diodes | MOSFETs Discrete semiconductors Bipolar transistors Zetex Semiconductors provides product designers with a broad range of discrete semiconductor components renowned for their quality, high performance and optimized
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2002/95/EC)
ZTX653 equivalent
ZTX753 equivalent
fzt651
ZDT1049
ztx1056A
ztx651 equivalent
equivalent FZT651
zldo 17 50
1N4148 SOD323
DIODE S4 58A
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BUK856-450IX
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener
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BUK856-450IX
T0220AB
BUK856-450IX
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1N6066A
Abstract: No abstract text available
Text: Back to Zener Diodes 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES DO-13 The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients
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OCR Scan
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PDF
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1N6036A
1N6072A
1N6072A
DO-13
1N6066A
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5N602
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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OCR Scan
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PDF
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BUK856-400IZ
T0220AB
BUK856-400IZ
5N602
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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OCR Scan
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PDF
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BUK856-400IZ
T0220AB
BUK856-400
Tp125
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BUK856-4001Z
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-4001Z Protected Logic-Level IGBT_ _ _ _ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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OCR Scan
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PDF
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BUK856-4001Z
T022QAB
BUK856-400
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level Insulated gate bipolar power
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OCR Scan
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PDF
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BUK856-400
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D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope
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OCR Scan
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PDF
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BUK866-400IZ
300us)
D 400 F 6 F BIPOLAR TRANSISTOR
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope
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OCR Scan
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PDF
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BUK866-400
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kd smd transistor
Abstract: smd transistor wc LG Philips LM 300 W 01
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope
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OCR Scan
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PDF
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BUK866-400
kd smd transistor
smd transistor wc
LG Philips LM 300 W 01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built-in free wheeling diode and a gate protection zener. Fast switching
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OCR Scan
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PDF
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MGP2N60D/D
MGP2N60D
21A-09
O-220AB
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