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    Q400414

    Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
    Text: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•


    OCR Scan     		PDF -T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B Q400414 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M

    1RF540

    Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
    Text: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)


    OCR Scan     		PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF540 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 LM3661TL-1.25 IRF533

    IRF3205

    Abstract: IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET
    Text: International lü Rectifier PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V


    OCR Scan     		PDF 1279C IRF3205 O-220 IRF3205 IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET

    1RF530

    Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
    Text: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)


    OCR Scan     		PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF530 1RF540 1rf520 RF543 IRF532 IRF533 IRF541 IRF542 IRF543

    10150 CT

    Abstract: schottky mbr MJFR MBR1015OCT MBR10200CT MBR1035CT Scans-008335
    Text: E MBR1035CT - MBR10200CT TAIWAN SEMICONDUCTOR 10.0 AM PS . Schottky Barrier Rectifiers RoHS T0-22QAB CO M PLIANCE - . . 1 Features <• P la s tic m £ te ria l used c s rrie a U n d e rw rite rs Lab o ra to ry C la s s ific a tio n s 9 4 V -0 M alar s ilico n ju n c tio n , m ajority c a rrie r cond u c tio n


    OCR Scan     		PDF MBR1035CT MBR10200CT O-220AB MBR10200CT) 10150 CT schottky mbr MJFR MBR1015OCT MBR10200CT Scans-008335

    ta7317

    Abstract: TA7311
    Text: I Power Transistore 2N5490-2N5497 353 7 HHAS File N um ber HARRIS SEMICOND SECTOR 27E I> M302271 G 0 n ò 7 M TERMINAL DESIGNATIONS Silicon N-P-N VERSAWATT Transistors G e n e r a l-P u rp o s e T y p e s fo r M e d iu m -P o w e r S w itc h in g an d A m p lifie r A p p lic a tio n s


    OCR Scan     		PDF 2N5490-2N5497 M302271 2N5490, 2N5491) 2N5492, 2N5493) 2N5494, 2N5495) 2N5496, 2N5497) ta7317 TA7311

    T0220 PACKAGE buk553

    Abstract: BUK553-50A BUK553-50B T0220AB
    Text: N AMER PHILIPS/DISCRETE SSE D • bbSBTBl OaSObaO =1 PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK553-50A BUK553-50B BUK553 -ID/100 T0220 PACKAGE buk553 BUK553-50A BUK553-50B T0220AB

    IRF744

    Abstract: IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
    Text: International H EXFET liO R lR e c t i f i e r t o - 22oab Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-22QAB N-Channel - “ Low Charge” V BR oss Part Number Drain-to-Source RDS(on) Iq Continuous


    OCR Scan     		PDF 22oab T0-22QAB IRF740LC IRF840LC IRFBC40LC IRFBC10LC T0-220AB O-22QAB IRFZ46 IRF1010 IRF744 IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan     		PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530

    T1P132

    Abstract: TIP135 texas tip 132 *P131 opto
    Text: TE X A S I N S T R -COPTO} 8961726 TEXAS bä INST R DE § flit,17 2b OPTO 62C □ □ 3 b *=]□b 36906 TIPI 30, TIPI 31, TIPI 32 N-P-N DARLINGTON SILICON POWER TRANSISTORS R EV ISED O CTOBER 1984 • Designed For Complementary Use With TIP135, TIP136, TIP137


    OCR Scan     		PDF TIP135, TIP136, TIP137 T-33-29 T0-22QAB T1P132 TIP135 texas tip 132 *P131 opto

    1RF630

    Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
    Text: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)


    OCR Scan     		PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF630 irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613

    1rf730

    Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
    Text: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5


    OCR Scan     		PDF O-220 IRF712 T0-22QAB IRF710 IRF722 IRF720 IRF732 IRF730 IRF742 IRF740 1rf730 IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32

    BDX43C

    Abstract: No abstract text available
    Text: BDX34, BDX34A, BDX34B, BDX34C, BDX34D HARRIS SEMICOND SECTOR SbE P • File Number 694 4302271 0 0 4 0 ^ 7 T52 « H A S 10-Ampere P-N-P Darlington Power Transistors T -3 3 -3 1 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A BDX34, BDX34A


    OCR Scan     		PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D 10-Ampere BDX34A) BDX43C

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 20 Amp SCHOTTKY BARRIER RECTIFIERS 'emiconductor Mechanical Dimensions Description JEDEC T0-22QAB -fr— .too L- m . 1 4 0 v 4- ► .10 V =1 T~ + .39 .42 A-* .50 -»| m o + k- .225 K -*| Features • H IG H C U R R E N T C A P A B IL IT Y W IT H L O W V r


    OCR Scan     		PDF T0-22QAB FBR2030 FBR2045 51X25X30cm 21X21X5 47X22X27cm

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 16 Amp PLASTIC SILICON RECTIFIERS FR1601. . . 1606 Series Semiconductor Description Mechanical Dimensions JEDEC T0-22QAB .14,0 .10 \ .39 .42 .too k - so - h +_ U- .225 Min .620 h 1— .25 T1 — *\ F e a tu re s • LO W C O ST ■ D IF F U S E D J U N C T IO N


    OCR Scan     		PDF FR1601. T0-22QAB FR1601 FR1602 FR1603 FR1604 FR1605 FR1606 51X25X30cm

    Untitled

    Abstract: No abstract text available
    Text: BTA16-xxxSW BTB16-xxxSW HIGH PERFORMANCE LOGIC LEVEL TRIACS FEATURES = 16 A • LOGIC LEVEL TRIGGERING: ■ HIGH SURGE CAPABILITY ■ It rm s Ig t< 10mA DESCRIPTION The BTA/BTB16-xxxSW triacs are using a high performance glass passivated technology. These


    OCR Scan     		PDF BTA16-xxxSW BTB16-xxxSW BTA/BTB16-xxxSW

    wn 537 a fet

    Abstract: No abstract text available
    Text: • ô c !3 s b 0 s m a ■ PRÜFET BTS410F2 SIEMENS Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump


    OCR Scan     		PDF O-220AB/5, E3043 Q67060-S6103-A3 BTS307/308 2fi33 wn 537 a fet

    irf9630

    Abstract: T0-22Q IRF9Z34 IRF9Z14
    Text: International HEXFET Power MOSFETs T0-22QAB liQ R R ectifier Logic-level H E X F E T s are fully-enhanced with 4 or 5V applied to the gate. T0-220AB Logic Level N-Channel Part Number V BR DSS Drain-to-Source Boston) Iq Continuous Breakdown On-State Drain Current


    OCR Scan     		PDF T0-22QAB T0-220AB IRL2203 IRL3705 IRLZ14 IRLZ24 IRLZ34 IRLZ44 IRL510 IRL520 irf9630 T0-22Q IRF9Z34 IRF9Z14

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    BT808

    Abstract: Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH
    Text: LORAS INDUSTRIES INC 42E D 5500440 DOOOODt. T IL O R A “T - 2 5 ' O Î TRIAC ITrms PART No. VDRM Volts PACKAGE Amps IDRM mAmps IGT Q2 Q3 mAmps Q1 VGT Volts Q4 Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms T O -92 Package MAC974 0.6 0.6 MAC976 MACÔ7& 0.6: MAC97A3 "•


    OCR Scan     		PDF -T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B BT808 Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH

    TIP74C

    Abstract: transistor DA 2688 TIP73 TIP73C TIP73A
    Text: bi T E X A S I N S T R -COPTO} » Ì ] f l tìbl7 Sb 0 D 3 hfl52 Ö3 6 1 7 2 6 TEXAS INSTR COPTO 62C 3Ó852 TIP74, TIP74A, TIP74B, TIP74C P-N-P SILICON POWER TRANSISTORS FEBRUARY 1977 - REVISED OCTOBER 1984 Designed for Complementary Use with TIP73, TIP73A, TIP73B,


    OCR Scan     		PDF hfl52 TIP74, TIP74A, TIP74B, TIP74C TIP73, TIP73A, TIP73B, TIP73C 2N6489 transistor DA 2688 TIP73 TIP73A

    2A20

    Abstract: No abstract text available
    Text: TEXAS INSTR -COPTO} " DE I f i ^ b l T E b S 9 6 1 7 2 6 TEXAS INSTR COPTO 62C 003t,fi54 3 36824 TIP47, TIP48, TIP49, TIP50 N-P-N SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 4 0 W at 2 5 ° C Case Temperature 1 A Continuous Collector Current


    OCR Scan     		PDF TIP47, TIP48, TIP49, TIP50 T0-22QAB 2A20

    TIC2360

    Abstract: 8ta12 SC160D TLC226B TO505mh Q2006L5 SC160M 04004f41 C245B Q6040
    Text: LO R A S I N D U S T R I E S INC M2E D • 5SflQ44ö G D G G O D b T ■ LORA “T -2 5 'O Í TRIAC o Q1 Ol VDRM IDRM Volts mAmps col PACKAGE OJ O ITrms Amps PART No. mAmps VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976


    OCR Scan     		PDF 5SflQ44Ã MAC974 MAC976 MAC978 MAC97A6 MAC97A8 SC92B O-218AC BTB41200A T0218AC TIC2360 8ta12 SC160D TLC226B TO505mh Q2006L5 SC160M 04004f41 C245B Q6040

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.689A bitemational S«§Rectifier IRGBC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF 10kHz) IRGBC30F T0-22QAB