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    BLF2425M7L250P Price and Stock

    Ampleon BLF2425M7L250P,118

    RF MOSFET LDMOS 28V SOT539A
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    DigiKey BLF2425M7L250P,118 Reel 100
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    Flip Electronics BLF2425M7L250P,112

    RF MOSFET LDMOS 65V 2.5GHZ 20MA
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    DigiKey BLF2425M7L250P,112 Tray 5
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    Avnet Americas BLF2425M7L250P,112 Tray 16 Weeks 60
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    Flip Electronics BLF2425M7L250P,118

    LDMOS POWER TRANSISTOR - Tape and Reel (Alt: BLF2425M7L250P,118)
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    Avnet Americas BLF2425M7L250P,118 Reel 16 Weeks 100
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    Ampleon BLF2425M7L250P,112

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    BLF2425M7L250P Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF2425M7L250P NXP Semiconductors RF power as a robust and highly efficient energy source Original PDF
    BLF2425M7L250P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF2425M7L250P,112 NXP Semiconductors BLF2425M7L250P - BLF2425M7L250P - Power LDMOS transistor Original PDF
    BLF2425M7L250P,118 NXP Semiconductors BLF2425M7L250P - BLF2425M7L250P - Power LDMOS transistor Original PDF

    BLF2425M7L250P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 — 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


    Original     		BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.


    Original     		BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P 2425M7LS250P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.


    Original     		BLF2425M7L250P; BLF2425M7LS250P 2002/95/EC, BLF2425M7L250P 2425M7LS250P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


    Original     		BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P PDF

    1241 transistor

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 1 — 18 July 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.


    Original     		BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P 2425M7LS250P 1241 transistor PDF

    BLF188XRS

    Abstract: BLF574XR,112
    Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR


    Original     		26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112 PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF