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    BLF6G13L Price and Stock

    FLIP ELECTRONICS BLF6G13LS-250PGJ

    RF MOSFET LDMOS 100V 1.3GHZ 1.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF6G13LS-250PGJ Reel 5
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    Ampleon BLF6G13LS-250PGJ

    RF MOSFET LDMOS 50V CDFM4
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    DigiKey BLF6G13LS-250PGJ Cut Tape 1
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    Avnet Americas BLF6G13LS-250PGJ Reel 16 Weeks 100
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    Flip Electronics BLF6G13LS-250PGJ 86
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    FLIP ELECTRONICS BLF6G13L-250P,112

    RF MOSFET LDMOS 100V 1.3GHZ 1.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF6G13L-250P,112 Tray 5
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    • 10 $284.38
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    Rochester Electronics LLC BLF6G13L-250P,112

    RF PFET, 2-ELEMENT, L BAND, SILI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF6G13L-250P,112 Tube 2
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    FLIP ELECTRONICS BLF6G13LS-250P,112

    RF MOSFET LDMOS 100V 1.3GHZ 1.5A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF6G13LS-250P,112 Tray 5
    • 1 -
    • 10 $284.38
    • 100 $284.38
    • 1000 $284.38
    • 10000 $284.38
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    Find more BLF6G13L price and stock on Findchips.com

    BLF6G13L Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF6G13L-250P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G13L-250P,112 NXP Semiconductors BLF6G13L-250P - Power LDMOS transistor, SOT1121A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G13LS-250P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G13LS-250P,112 NXP Semiconductors BLF6G13LS-250P - Power LDMOS transistor, SOT1121B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G13LS-250PGJ Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 100V 17DB SOT1121E Original PDF

    BLF6G13L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UT-141C-25-TP

    Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
    Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.


    Original     		BLF6G13L-250P; BLF6G13LS-250P BLF6G13L-250P 6G13LS-250P UT-141C-25-TP 200B 4350B 800B UT-141C-35-TP 250WF PDF

    BLF6G13L

    Abstract: UT-141C-25-TP
    Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 3 — 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.


    Original     		BLF6G13L-250P; BLF6G13LS-250P BLF6G13L-250P 6G13LS-250P BLF6G13L UT-141C-25-TP PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G13L-250; BLF6G13LS-250 Power LDMOS transistor Rev. 01 — 28 April 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 °C; IDq = 100 mA; in a class-AB production test circuit.


    Original     		BLF6G13L-250; BLF6G13LS-250 BLF6G13L-250 6G13LS-250 PDF

    BLF6G13L-250P

    Abstract: JESD625-a 250WF
    Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 1 — 2 November 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 °C; IDq = 100 mA; in a class-AB production test circuit.


    Original     		BLF6G13L-250P; BLF6G13LS-250P BLF6G13L-250P 6G13LS-250P JESD625-a 250WF PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H PDF

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 PDF

    BLF188XRS

    Abstract: BLF574XR,112
    Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR


    Original     		26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112 PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF