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    BLF6G15L Price and Stock

    Ampleon BLF6G15L-40RN,118

    IC AMP CDMA 1.55GHZ SOT1135A
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    Ampleon BLF6G15L-500H,112

    RF MOSFET LDMOS 50V SOT539A
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    Rochester Electronics LLC BLF6G15L-40RN,112

    BLF6G15L-40RN - 40 LDMOS POWER T
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    Ampleon BLF6G15L-40RN,112

    IC AMP CDMA 1.55GHZ SOT1135A
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    Rochester Electronics BLF6G15L-40RN,112 525 1
    • 1 $51.46
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    Ampleon BLF6G15LS-40RN,112

    RF MOSFET LDMOS 28V CDFM2
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    DigiKey BLF6G15LS-40RN,112 Tray
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    BLF6G15L Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF6G15L-250PBRN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G15L-250PBRN,1 NXP Semiconductors BLF6G15L-250PBRN - Power LDMOS transistor, SOT1110A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G15L-250PBRN:1 NXP Semiconductors BLF6G15L-250PBRN - Power LDMOS transistor, SOT1110A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G15L-40BRN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G15L-40BRN,112 NXP Semiconductors BLF6G15L-40BRN - Power LDMOS transistor, SOT1112A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G15L-40BRN,118 NXP Semiconductors BLF6G15L-40BRN - Power LDMOS transistor, SOT1112A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G15L-40RN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G15L-40RN,112 NXP Semiconductors BLF6G15L-40RN - Power LDMOS transistor, SOT1135A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G15L-40RN,118 NXP Semiconductors BLF6G15L-40RN - Power LDMOS transistor, SOT1135A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G15L-500H NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G15L-500H,112 NXP Semiconductors BLF6G15L-500H - Power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G15LS-250PBRN: NXP Semiconductors BLF6G15LS-250PBRN - BLF6G15LS-250PBRN - Power LDMOS transistor Original PDF
    BLF6G15LS-250PBRN, NXP Semiconductors RF FETs, Discrete Semiconductor Products, TRANS LDMOS SOT1110B Original PDF
    BLF6G15LS-250PBRN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G15LS-40RN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G15LS-40RN,112 NXP Semiconductors BLF6G15LS-40RN - Power LDMOS transistor, SOT1135B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G15LS-40RN,118 NXP Semiconductors BLF6G15LS-40RN - Power LDMOS transistor, SOT1135B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G15LS-500H,112 NXP Semiconductors BLF6G15LS-500H - Power LDMOS transistor, SOT539B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF

    BLF6G15L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    jrc 78L08

    Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
    Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN


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    PDF AN10923 BLF6G15L-250PBRN BLF6G15L-250PBRN jrc 78L08 RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08

    BU 0603

    Abstract: 800B BLF6G15L 029-KW
    Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15L-250PBRN BU 0603 800B BLF6G15L 029-KW

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-40RN; BLF6G15LS-40RN Power LDMOS transistor Rev. 2 — 14 May 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15L-40RN; BLF6G15LS-40RN BLF6G15L-40RN 6G15LS-40RN

    3590S-491-103

    Abstract: 23n50 13N50
    Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15L-40BRN 3590S-491-103 23n50 13N50

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15LS-250PBRN

    transistor 832

    Abstract: No abstract text available
    Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15LS-250PBRN transistor 832

    13N50

    Abstract: 8140115 nxp marking code M2
    Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15L-250PBRN 13N50 8140115 nxp marking code M2

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W


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    PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H

    transistor 832

    Abstract: 831 transistor
    Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15LS-250PBRN transistor 832 831 transistor

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15L-40BRN

    J2735

    Abstract: DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414
    Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W


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    PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H J2735 DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414

    BLF6G15L-40BRN

    Abstract: 800B RO4350
    Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15L-40BRN BLF6G15L-40BRN 800B RO4350

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


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    PDF BLF6G15L-250PBRN

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W


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    PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


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    PDF

    QUBiC4X

    Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
    Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers


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    PDF 12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


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    PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


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    PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


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    PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    BLF188XRS

    Abstract: BLF574XR,112
    Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR


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    PDF 26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


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    PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer