Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BLF6G22 Search Results

    SF Impression Pixel

    BLF6G22 Price and Stock

    Rochester Electronics LLC BLF6G22-45,135

    RF MOSFET LDMOS 28V CDFM2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF6G22-45,135 Bulk 142 6
    • 1 -
    • 10 $54.92
    • 100 $54.92
    • 1000 $54.92
    • 10000 $54.92
    		Buy Now

    Rochester Electronics LLC BLF6G22LS-130,118

    RF MOSFET LDMOS 28V SOT502B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF6G22LS-130,118 Bulk 100 4
    • 1 -
    • 10 $81.13
    • 100 $81.13
    • 1000 $81.13
    • 10000 $81.13
    		Buy Now

    Rochester Electronics LLC BLF6G22LS-130,112

    RF PFET, 1-ELEMENT, S BAND, SILI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF6G22LS-130,112 Tube 77 4
    • 1 -
    • 10 $91.86
    • 100 $91.86
    • 1000 $91.86
    • 10000 $91.86
    		Buy Now

    Rochester Electronics LLC BLF6G22LS-40P,118

    RF MOSFET LDMOS 28V LDMOST
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF6G22LS-40P,118 Bulk 36 6
    • 1 -
    • 10 $55.68
    • 100 $55.68
    • 1000 $55.68
    • 10000 $55.68
    		Buy Now

    Ampleon BLF6G22-45,112

    RF MOSFET LDMOS 28V CDFM2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF6G22-45,112 Tray
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more BLF6G22 price and stock on Findchips.com

    BLF6G22 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF6G22-130 NXP Semiconductors Boost the efficiency of UMTS macrocell basestations; NXP Doherty reference design with BLF6G22-130 Original PDF
    BLF6G22-180PN NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB Original PDF
    BLF6G22-180PN,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 17DB SOT539A Original PDF
    BLF6G22-180PN,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB; Package: SOT539A (LDMOST); Container: Blister pack Original PDF
    BLF6G22-180PN,112 NXP Semiconductors RF FETs, Discrete Semiconductor Products, TRANS BASESTATION SOT539A Original PDF
    BLF6G22-180PN,135 NXP Semiconductors BLF6G22-180PN - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, Large Original PDF
    BLF6G22-180RN,112 NXP Semiconductors Power LDMOS transistor, SOT502A (LDMOST), Blister pack Original PDF
    BLF6G22-45 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB Original PDF
    BLF6G22-45 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power Original PDF
    BLF6G22-45,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A Original PDF
    BLF6G22-45,135 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A Original PDF
    BLF6G22-45,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Blister pack Original PDF
    BLF6G22-45,112 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power Original PDF
    BLF6G22-45,135 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Tape reel smd Original PDF
    BLF6G22-45,135 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power Original PDF
    BLF6G22L-40BN NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G22L-40BN,112 NXP Semiconductors BLF6G22L-40BN - Power LDMOS transistor, SOT1112A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF6G22L-40BN,118 NXP Semiconductors BLF6G22L-40BN - Power LDMOS transistor, SOT1112A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF6G22L-40P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G22L-40P,112 NXP Semiconductors BLF6G22L-40P - Power LDMOS transistor, SOT1121A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF

    BLF6G22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF6G22-180PN

    Abstract: No abstract text available
    Text: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22-180PN BLF6G22-180PN

    BLF6G22-45

    Abstract: BLF6G22S-45 ROGERS DUROID
    Text: BLF6G22S-45 Power LDMOS transistor Rev. 02 — 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22S-45 BLF6G22S-45 BLF6G22-45 ROGERS DUROID

    J122 SMD TRANSISTOR

    Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
    Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN

    transistor D 1002

    Abstract: BLF6G22LS-100 RF35
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 02 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 transistor D 1002 RF35

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22L-40BN

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22S-45 Power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22S-45

    capacitor philips

    Abstract: 1021 "rf transistor"
    Text: BLF6G22-45; BLF6G22S-45 Power LDMOS transistor Rev. 01 — 19 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22-45; BLF6G22S-45 BLF6G22-45 BLF6G22S-45 capacitor philips 1021 "rf transistor"

    BLF6G22LS-100

    Abstract: RF35 TRANSISTOR SMD BV
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-75 BLF6G22LS-75

    SmD TRANSISTOR a41

    Abstract: No abstract text available
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 SmD TRANSISTOR a41

    BLF6G22LS-100

    Abstract: RF35
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 RF35

    BLF6G22-180PN

    Abstract: No abstract text available
    Text: BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22-180PN; BLF6G22LS-180PN BLF6G22-180PN 22LS-180PN

    BLF6G22-180P

    Abstract: SOT539A
    Text: BLF6G22-180P UHF power LDMOS transistor Rev. 01 — 2 March 2006 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance


    Original     		PDF BLF6G22-180P BLF6G22-180P SOT539A

    RF35

    Abstract: 1961 30 TRANSISTOR
    Text: BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22-180RN; BLF6G22LS-180RN BLF6G22-180RN 22LS-180RN RF35 1961 30 TRANSISTOR

    BLF6G22-130

    Abstract: doherty combiner blf6g22
    Text: NXP Doherty reference design with BLF6G22-130 Boost the efficiency of UMTS macrocell basestations Deliver the best performance with our state-of-the-art LDMOS technology in a Doherty amplifier. This easy-to-use reference design enhances the efficiency of your basestation system while


    Original     		PDF BLF6G22-130 BLF6G22-130 doherty combiner blf6g22

    C4532X7R1E475M

    Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf
    Text: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-130 BLF6G22LS-130 C4532X7R1E475M AVX12065C224K GRM217BR71H104KA11L RO4350B capacitor 220 uf

    BLF6G22LS-75

    Abstract: RF35
    Text: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-75 BLF6G22LS-75 RF35

    GP AAA

    Abstract: No abstract text available
    Text: BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 1 — 22 September 2011 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.


    Original     		PDF BLF6G22L-40P; BLF6G22LS-40P BLF6G22L-40P 6G22LS-40P GP AAA

    BLF6G22LS-75

    Abstract: RF35 TRANSISTOR 751
    Text: BLF6G22LS-75 Power LDMOS transistor Rev. 01 — 8 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-75 BLF6G22LS-75 RF35 TRANSISTOR 751

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22-45 Power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22-45

    capacitor philips

    Abstract: transistor c9 "capacitor philips" R04350
    Text: BLF6G22-180PN Power LDMOS transistor Rev. 01 — 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22-180PN BLF6G22-180PN capacitor philips transistor c9 "capacitor philips" R04350

    BLF6G22-45

    Abstract: No abstract text available
    Text: BLF6G22-45 UHF power LDMOS transistor Rev. 01 — 17 February 2006 Objective data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance


    Original     		PDF BLF6G22-45 BLF6G22-45

    J122 SMD TRANSISTOR

    Abstract: No abstract text available
    Text: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22LS-40BN J122 SMD TRANSISTOR

    BLF6G22-45

    Abstract: BLF6G22S-45
    Text: BLF6G22-45 Power LDMOS transistor Rev. 02 — 21 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G22-45 BLF6G22-45 BLF6G22S-45