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    BLF7G22L Price and Stock

    Rochester Electronics LLC BLF7G22LS-130,118

    RF MOSFET LDMOS 28V SOT502B
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    DigiKey BLF7G22LS-130,118 Bulk 400 4
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    Flip Electronics BLF7G22LS-130,118

    RF MOSFET LDMOS 65V 2.2GHZ 950MA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF7G22LS-130,118 Reel 375 5
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    Avnet Americas BLF7G22LS-130,118 Reel 16 Weeks 100
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    Rochester Electronics LLC BLF7G22LS-160,112

    RF PFET, 1-ELEMENT, S BAND, SILI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF7G22LS-160,112 Tube 78 4
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    Rochester Electronics LLC BLF7G22LS-250P,112

    RF MOSFET LDMOS 28V SOT539B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF7G22LS-250P,112 Tube 60 3
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    Rochester Electronics LLC BLF7G22LS-250P,118

    RF MOSFET LDMOS 28V SOT539B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BLF7G22LS-250P,118 Bulk 56 3
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    Find more BLF7G22L price and stock on Findchips.com

    BLF7G22L Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF7G22L-100P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G22L-100P,112 NXP Semiconductors BLF7G22L-100P - Power LDMOS transistor, SOT1121A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G22L-100P,118 NXP Semiconductors BLF7G22L-100P - Power LDMOS transistor, SOT1121A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF7G22L-130 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G22L-130,118 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT502A Original PDF
    BLF7G22L-130,112 NXP Semiconductors BLF7G22L-130 - Power LDMOS transistor, SOT502A Package, Standard Marking, ICS Tube - DSC Bulk Pack Original PDF
    BLF7G22L-130,118 NXP Semiconductors BLF7G22L-130 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF7G22L-130,118 NXP Semiconductors RF FETs, Discrete Semiconductor Products, TRANSISTOR PWR LDMOS SOT502A Original PDF
    BLF7G22L-130N,112 NXP Semiconductors BLF7G22L-130N - Power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G22L-160 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G22L-160,118 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18DB SOT502A Original PDF
    BLF7G22L-160,112 NXP Semiconductors BLF7G22L-160 - Power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G22L-160,118 NXP Semiconductors RF FETs, Discrete Semiconductor Products, TRANS LDMOS SOT502A Original PDF
    BLF7G22L-160,118 NXP Semiconductors BLF7G22L-160 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF7G22L-200 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G22L-200,112 NXP Semiconductors BLF7G22L-200 - Power LDMOS transistor, SOT502A Package, Standard Marking, Tube - DSC Bulk Pack Original PDF
    BLF7G22L-200,118 NXP Semiconductors BLF7G22L-200 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF7G22L-250P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G22L-250P,112 NXP Semiconductors BLF7G22L-250P - Power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G22L-250P,118 NXP Semiconductors BLF7G22L-250P - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF

    BLF7G22L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF7G22LS-200

    Abstract: BLF7G22L BLF7G
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 01 — 19 April 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 BLF7G22LS-200 BLF7G22L BLF7G

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 — 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-250PB; BLF7G22LS-250PB Power LDMOS transistor Rev. 01 — 16 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1.


    Original     		PDF BLF7G22L-250PB; BLF7G22LS-250PB

    ATC100B

    Abstract: avx1206 BLF7G22L-130 BLF7G22LS-130 RO4350 transistor BC 185
    Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130 ATC100B avx1206 BLF7G22LS-130 RO4350 transistor BC 185

    78L08

    Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544
    Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


    Original     		PDF AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 78L08 MMBT2222 2N2222 nxp 544

    BLF7G22LS-100P

    Abstract: No abstract text available
    Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 1 — 19 May 2011 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P BLF7G22LS-100P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 2 — 10 November 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1.


    Original     		PDF BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130

    j597

    Abstract: TRANSISTOR j589
    Text: BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 2 — 28 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-250P; BLF7G22LS-250P BLF7G22L-250P 22LS-250P j597 TRANSISTOR j589

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200

    ATC100B

    Abstract: AVX1206 BLF7G22LS-130 RO4350 PLW70 TRANSISTOR BC 338 SMD
    Text: BLF7G22L-130N Power LDMOS transistor Rev. 1 — 25 February 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-130N ATC100B AVX1206 BLF7G22LS-130 RO4350 PLW70 TRANSISTOR BC 338 SMD

    BLF7G22LS-200

    Abstract: BLF7G22L
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 2 — 28 December 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 BLF7G22LS-200 BLF7G22L

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130

    avx1206

    Abstract: BLF7G22LS-130 TRANSISTOR BC 135 ATC100B RO4350 PLW70
    Text: BLF7G22LS-130 Power LDMOS transistor Rev. 01 — 2 February 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22LS-130 BLF7G22LS-130 avx1206 TRANSISTOR BC 135 ATC100B RO4350 PLW70

    flanged pin

    Abstract: No abstract text available
    Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P flanged pin

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160

    smd J476

    Abstract: 1 Gp 36 800B RF35 BLF7G22L-160 481gp 1gp36
    Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 1 — 27 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160 smd J476 1 Gp 36 800B RF35 481gp 1gp36

    BLF7G22L

    Abstract: BLF7G22L-250P 4102 transistor 3155 power transistor
    Text: BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 01 — 6 May 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-250P; BLF7G22LS-250P BLF7G22L-250P 22LS-250P BLF7G22L 4102 transistor 3155 power transistor

    RO4350 30mil

    Abstract: transistor BC 341-6 BLF7G22L-130 TRANSISTOR BC 135 ATC100B AVX1206 BLF7G22LS-130 RO4350 TRANSISTOR BC 338 SMD
    Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 3 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130 RO4350 30mil transistor BC 341-6 TRANSISTOR BC 135 ATC100B AVX1206 BLF7G22LS-130 RO4350 TRANSISTOR BC 338 SMD

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P

    NJM 78L08UA-ND

    Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor
    Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


    Original     		PDF AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor