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    BLF7G24LS Price and Stock

    Ampleon BLF7G24LS-100

    RF MOSFET LDMOS 28V SOT502B
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    Ampleon BLF7G24LS-140

    RF MOSFET LDMOS 28V SOT502B
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    Ampleon BLF7G24LS-140,112

    RF MOSFET LDMOS 28V SOT502B
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    Verical BLF7G24LS-140,112 4,200 5
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    BLF7G24LS-140,112 60 5
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    Rochester Electronics BLF7G24LS-140,112 4,260 1
    • 1 $66.11
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    Rochester Electronics LLC BLF7G24LS-140,118

    RF MOSFET LDMOS 28V SOT502B
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    DigiKey BLF7G24LS-140,118 Bulk 5
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    Ampleon BLF7G24LS-140,118

    RF MOSFET LDMOS 28V SOT502B
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    DigiKey BLF7G24LS-140,118 Reel
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    Verical BLF7G24LS-140,118 159 5
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    • 10 $82.6375
    • 100 $77.675
    • 1000 $70.2375
    • 10000 $70.2375
    		Buy Now
    BLF7G24LS-140,118 19 5
    • 1 -
    • 10 $82.6375
    • 100 $77.675
    • 1000 $70.2375
    • 10000 $70.2375
    		Buy Now
    Rochester Electronics BLF7G24LS-140,118 178 1
    • 1 $66.11
    • 10 $66.11
    • 100 $62.14
    • 1000 $56.19
    • 10000 $56.19
    		Buy Now
    Find more BLF7G24LS price and stock on Findchips.com

    BLF7G24LS Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF7G24LS-100 NXP Semiconductors RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz Original PDF
    BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G24LS-100,112 NXP Semiconductors BLF7G24LS-100 - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G24LS-100,118 NXP Semiconductors BLF7G24LS-100 - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF7G24LS-140 NXP Semiconductors RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz Original PDF
    BLF7G24LS-140 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G24LS-140,112 NXP Semiconductors BLF7G24LS-140 - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G24LS-140,118 NXP Semiconductors BLF7G24LS-140 - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF7G24LS-160P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G24LS-160P,112 NXP Semiconductors BLF7G24LS-160P - Power LDMOS transistor, SOT539B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G24LS-160P,118 NXP Semiconductors BLF7G24LS-160P - Power LDMOS transistor, SOT539B Package, Standard Marking, Reel Pack, SMD, 13" Original PDF

    BLF7G24LS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF7G24LS

    Abstract: BLF7G24L-140 BLF7G24LS-140 nxp semiconductors
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 1 — 5 August 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k IS-95 BLF7G24L-140 7G24LS-140 BLF7G24LS BLF7G24LS-140 nxp semiconductors

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 3 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k BLF7G24L-100 7G24LS-100

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k BLF7G24L-140 7G24LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k BLF7G24L-140 7G24LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-100; BLF7G24LS-100 ACPR885k IS-95 IS-95 BLF7G24L-100 7G24LS-100

    BLF7G24LS-160P

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 1 — 10 February 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P BLF7G24LS-160P

    smd transistor 2300

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 2 — 1 March 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 01 — 14 April 2010 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k IS-95 BLF7G24L-100 7G24LS-100

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k BLF7G24L-100 7G24LS-100

    Untitled

    Abstract: No abstract text available
    Text: NXP power LDMOS transistors BLF7G24LS-100 and BLF7G24LS-140 RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz Designed for LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPDfriendly transistors cover the entire frequency range of 2.3 to 2.4 GHz. They enable asymmetrical


    Original     		PDF BLF7G24LS-100 BLF7G24LS-140 BLF7G24LS-100 BLF7G24LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 4 — 25 July 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-140; BLF7G24LS-140 ACPR885k IS-95 IS-95 BLF7G24L-140 7G24LS-140

    smd transistor 2300

    Abstract: BLF7G24LS-160P 2300 TRANSISTOR REPLACEMENT table for transistor
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 3 — 20 April 2012 Preliminary data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300 BLF7G24LS-160P 2300 TRANSISTOR REPLACEMENT table for transistor

    BLF7G24L-100

    Abstract: BLF7G24L
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 2 — 14 July 2010 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k IS-95 BLF7G24L-100 7G24LS-100 BLF7G24L

    smd transistor 2300

    Abstract: No abstract text available
    Text: BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 5 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		PDF BLF7G24L-160P; BLF7G24LS-160P IS-95 ACPR885k IS-95 BLF7G24L-160P 7G24LS-160P smd transistor 2300

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


    Original     		PDF

    QUBiC4X

    Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
    Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers


    Original     		PDF 12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    BLF188XRS

    Abstract: BLF574XR,112
    Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR


    Original     		PDF 26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF