Untitled
Abstract: No abstract text available
Text: MT4C2M8B1 S 2 MEG x 8 DRAM MICRON I TECHNOLOGY, INC. DRAM 2 MEG x 8 DRAM 5.0V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x8 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5.0V ±10% power supply
|
OCR Scan
|
250mW
048-cycle
28-Pin
blll54T
00157Mb
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE M in P n M I - MT4LC16270 256K X 16 DRAM DRAM 256K x 16 DRAM 3.3V EDO PAGE MODE FEATURES • Single +3.3V ±0.3V power supply* • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Low power, 0.3mW standby; 165mW active, typical
|
OCR Scan
|
MT4LC16270
165mW
512-cycle
CYCLE24
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT9LD272A X , MT18LD472A(X) 2, 4 MEG X 72 DRAM MODULES MICRON I TECHNOLOGY, INC. 2, 4 MEG x 72 DRAM MODULE 16, 32 MEGABYTE, ECC, NONBUFFERED, 3.3V, 8 CAS#, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • Eight CAS#, ECC pinout in a 168-pin, dual-in-line
|
OCR Scan
|
MT9LD272A
MT18LD472A
168-Pin
168-pin,
240mW
048-cycle
G01SL01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE M T 5 8 L C 1 2 8 K 16/ 18 G 1 1 2 8 K X 16 /18 S Y N C B U R S T S R A M MICRON I TECHNOLOGY, INC. SYNCHRONOUS SRAM 128Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES PIN ASSIGNMENT Top View 100-Pin TQFP
|
OCR Scan
|
128Kx
100-Pin
MT58LC128K16/18G1
blll54t
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 8 MEG DRAM IW IÖ m V 8 MEG x 64 D LI I / U U U F 64 MEGABYTE, NONBUFFERED, 3.3V, g CAS# FAST PAGE 0R ED0 PAGE m o d e t FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • JEDEC- and industry-standard eight CAS#, ECC pinout in a 168-pin, dual-in-line memory module
|
OCR Scan
|
MT32LD864A
168-pin,
249mW
048-cycle
0D15b31
168-PIN
15b3E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MICRON I MT4C1M16E5 S 1 MEG X 16 DRAM TECHNOLOGY, MC. 1 MEG x 16 DRAM DRAM 5.0V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-perform ance CMOS silicon-gate process • Single +5.0V +10% pow er supply
|
OCR Scan
|
MT4C1M16E5
024-cyde
310mW
44/50-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE I 128K TECHNCIWV.'NC SYNCHRONOUS SRAM X MT58LC128K32D7 32 SYNCBURST SRAM 128K x 32 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • Fast access times: 4.5, 5 , 6,7 and 8ns
|
OCR Scan
|
MT58LC128K32D7
160-PIN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT4C4M4B1 S 4 MEG X 4 DRAM MICRON I TECHNOLOGY, INC. DRAM 4 MEG x 4 DRAM 2K REFRESH, 5.0V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
|
OCR Scan
|
230mW
048-cycle
24/26-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M T4LC 4001J S 1M EGX 4 D R A M MICRON I 1 1 MEG x 4 DRAM DRAM FEATURES • Single +3.3V ±.3V power supply • Low power, 250|xW standby; 100m W active, typical • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
|
OCR Scan
|
024-cyde
128ms
MT4IC4001J
0D112b?
MT4LC4001
CYCLE24
DD112b0
|
PDF
|