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    Text: M T4LC 4001J S 1M EGX 4 D R A M MICRON I 1 1 MEG x 4 DRAM DRAM FEATURES • Single +3.3V ±.3V power supply • Low power, 250|xW standby; 100m W active, typical • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process


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    PDF 024-cyde 128ms MT4IC4001J 0D112b? MT4LC4001 CYCLE24 DD112b0