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    BONDING Price and Stock

    3M Interconnect WAFERBONDING

    Adhesive Tapes WAFER BONDING SUPPORT SYSTEM
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    Mouser Electronics WAFERBONDING
    • 1 $64.89
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    ITT Interconnect Solutions Z06609-BOND

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    Onlinecomponents.com Z06609-BOND
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    ITT Interconnect Solutions Z12018-BOND

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    ITT Interconnect Solutions Z34183-BOND

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    • 1 $60.15
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    • 100 $31.4
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    ITT Interconnect Solutions Z74969-BOND

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    BONDING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E85381

    Abstract: No abstract text available
    Text: RAYCHEM Tubing Products 1 CGAT Heat-shrinkable Tubing Adhesive-Lined, Flexible, Polyolefin Heat-Shrinkable Tubing Product Facts 3:1 Shrink ratio High-strength bonding • Moisture-proof ■ Environmental sealing ■ RoHS compliant ■ ■ Specifications/Approvals


    Original     		PDF

    w13002

    Abstract: 03352 W1-300
    Text: NM1-3216TWC4-01 Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg The materials of the LED dice is InGaN/GaN 3.20mmx1.60mm×0.70mm SMT-LED RoHS compliant lead-free soldering compatible Package Outline RESIN: EPOXY BONDING WIRE:Φ25um Au LED DICE 1 2 PRINTED CIRCUIT BOARD: BT


    Original     		PDF NM1-3216TWC4-01 004inch) W13002 Width10msec. w13002 03352 W1-300

    Untitled

    Abstract: No abstract text available
    Text: NM1-AYL1-01 Package outlines 2 RECOMMEND PAD LAYOUT 1 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES ITEM MATERIALS Resin Epoxy Bonding Wire Ø 25 µm Au Lens color Water transparent Dice AlGalnP Emitted color Yellow NOTES: 1. All dimensions are in millimeters inches ;


    Original     		PDF NM1-AYL1-01 008inch) Width10msec.

    MPSa56 equivalent

    Abstract: transistor MPSA56 MPSA56 transistor CP704 MPSA55 MPSA56
    Text: PROCESS CP704 Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.7 X 3.7 MILS Emitter Bonding Pad Area 4.2 X 4.2 MILS Top Side Metalization


    Original     		PDF CP704 MPSA55 MPSA56 MPSa56 equivalent transistor MPSA56 MPSA56 transistor CP704 MPSA55 MPSA56

    Schottky diode

    Abstract: CMLSH05-4 diode 29 CPD96V
    Text: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD96V 500mA CMLSH05-4 29-August Schottky diode CMLSH05-4 diode 29 CPD96V

    CP304

    Abstract: MPSa06 equivalent transistor MPSA06 MPSA05 MPSA06
    Text: PROCESS CP304 Central Small Signal Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.7 X 4.0 MILS Emitter Bonding Pad Area 5.3 X 4.0 MILS


    Original     		PDF CP304 MPSA05 MPSA06 21-September CP304 MPSa06 equivalent transistor MPSA06 MPSA05 MPSA06

    MPSA13

    Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14
    Text: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area


    Original     		PDF CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14

    CMOD2004

    Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
    Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		PDF CPD80V CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 CMOD2004 CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004

    CPD73

    Abstract: No abstract text available
    Text: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)


    Original     		PDF CPD73 28-August CPD73

    transistor 2N4033

    Abstract: 2N4033 CMPT4033 CP705 CXT4033 CZT4033
    Text: PROCESS CP705 Small Signal Transistor PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization


    Original     		PDF CP705 2N4033 CMPT4033 CXT4033 CZT4033 23-August transistor 2N4033 2N4033 CMPT4033 CP705 CXT4033 CZT4033

    1N4148 chip

    Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
    Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		PDF CPD83V CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 1N4148 chip DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448

    NJU6316 Series

    Abstract: NJU6312AW-L NJU6312CC-L NJU6316XC-L CAPACITOR ceramic 15pf NS2009 NJU6316
    Text: NJU6316 Series 0.9V Operation Fundamental Quartz Crystal Oscillator IC !GENERAL DESCRIPTION The NJU6316 series is C-MOS quartz crystal oscillator IC for fundamental up to 80MHz oscillation. The operating voltage is from 0.9V to 3.3V, and the pad layout is suitable for wire bonding mount of existing-sized


    Original     		PDF NJU6316 80MHz) f0/16 f0/32 80MHz 1000pF NJU6316 Series NJU6312AW-L NJU6312CC-L NJU6316XC-L CAPACITOR ceramic 15pf NS2009

    1N5811

    Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
    Text: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization


    Original     		PDF CPD18 1N5807 1N5811 UES1301 UES1306 UES1401 UES1403 CUDD8-02 24-August 1N5811 CPD18 UES1306 UES1403

    1N5408 Diode 1N5408

    Abstract: diode 1n5624 1N5408 equivalent 1n5408 Diode 1n5400 diode 1n5408 1n5400 diode 1n5624 1N5400 1n5408 diode
    Text: PROCESS CPD06 General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.4 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization


    Original     		PDF CPD06 1N5400 1N5408 1N5550 1N5554 1N5624 1N5627 CMR3-02 1N5408 Diode 1N5408 diode 1n5624 1N5408 equivalent 1n5408 Diode 1n5400 diode 1n5408 1n5400 diode 1n5408 diode

    UMD2-SOD-323

    Abstract: ZENER DIODE 5.1V 10v ZENER DIODE Zener 5.1V UDZS Series Zener Diode SOD-323 ZENER diode BOOK 10v zener improves
    Text: Diodes Zener diode UDZS Series FApplication Constant voltage control FExternal dimensions Units: mm FFeatures 1) Extremely compact, 2–pin mini–mold type for highdensity mounting. (UMD2–SOD–323) 2) Non–wire bonding structure improves antu–surge capability.


    Original     		PDF

    2N2222A npn transistor

    Abstract: 2n2222a die CMPT2222A CZT2222A CXT2222A 2n2222a datasheet Transistor 2N2222A 2N2222A NPN transistor datasheets CP191 PN2222A
    Text: Central TM PROCESS CP191 Small Signal Transistor Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS


    Original     		PDF CP191 2N2219A 2N2222A CMPT2222A CMST2222A CXT2222A CZT2222A MD2219A PN2222A 14-August 2N2222A npn transistor 2n2222a die CMPT2222A CZT2222A CXT2222A 2n2222a datasheet Transistor 2N2222A 2N2222A NPN transistor datasheets CP191 PN2222A

    1N4007 rectifier diode

    Abstract: 1N4007 details 1n5062 equivalent free download datasheet 1N4007 1N5622 1N5614 1N5062 diode 1n5059 equivalent components of diode 1N4249 1N3611
    Text: PROCESS CPD05 General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Å Back Side Metalization


    Original     		PDF CPD05 1N3611 1N3614 1N4001 1N4007 1N4245 1N4249 1N5059 1N5062 1N5391 1N4007 rectifier diode 1N4007 details 1n5062 equivalent free download datasheet 1N4007 1N5622 1N5614 1N5062 diode 1n5059 equivalent components of diode 1N4249

    B59060-A60-A10

    Abstract: B59060-A160-A10 ptc siemens B59060 B59060-A180-A10 B59060-A220-A10 B59060-A40-A10 B59060-A80-A10
    Text: Heating Elements and Thermostats B59060 A 60 12 V Applications ● Heating element for small heating systems, e. g. in automobiles Features ● Thermistor disk with silver metallization on front surfaces Termination ● Suitable for clamp-contacting and glue-bonding


    Original     		PDF B59060 B59060-A-A10 B59060-A40-A10 B59060-A60-A10 B59060-A80-A10 B59060-A120-A10 B59060-A160-A10 B59060-A180-A10 B59060-A220-A10 B59060-A280-A10 B59060-A60-A10 B59060-A160-A10 ptc siemens B59060 B59060-A180-A10 B59060-A220-A10 B59060-A40-A10 B59060-A80-A10

    closure

    Abstract: Lucent Technologies fiber LG36 2400-LG36 comcode
    Text: fiber.book : sec11.fm Page 15 Thursday, June 22, 2000 11:40 AM 2400 Fiber Optic Bonding and Grounding Closure This closure is designed to provide lightning and power crossprotection for Lucent Technologies Fiber Optic cables at nonsplice points in aerial, buried, underground, vault, and customer premises


    Original     		PDF sec11 2400-LG36 36-inch 40-inch 70-inch 2492C) 70-inch closure Lucent Technologies fiber LG36 2400-LG36 comcode

    CD5279B

    Abstract: CD5265B zener diode si 18 1n522ib CD5221B CD5222B CD5223B CD5224B CD5225B CD5226B
    Text: jCOMPENSATED DEVICES INC . * M l R DIODE CHIPS' ;— EQE D I 2305554 DÖD041D 1 ' • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B • ELECTRICALLY EQUIVALENT TO 1N522IB THRU 1N5281B thru . GENERAL PURPOSE 500 mW CHIPS CD528I1B • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES


    OCR Scan     		PDF D041D 1n522ib 1n5281b CD5221B CD528I1B CD5221B CD5222B CD5223B CD5224B CD5225B CD5279B CD5265B zener diode si 18 CD5226B

    opto 421

    Abstract: OD-24X24-C 3BFL 10010y
    Text: OPTO DIODE CORP SSE D • b flQ in fi DDDD14S HEI M O P D V - V / ~ HIGH POWER GaAlAs IR EMITTER CHIPS OD-24X24-C FEATURES • High current capability • 2 bond pads for uniform output • Gold contacts for high reliability bonding • High reliability LPE GaAIAs IRLED chips


    OCR Scan     		PDF OD-24X24-C OD-24X24-C opto 421 3BFL 10010y

    CD4490

    Abstract: CD4464 CD4469 CD4460 CD4468 DIODE 33 25 CD4461 CD4462 CD4463 CD4465
    Text: • 1.5 WATT ZENER DIODE CHIPS CD4460 thru • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACHED TECHNIQUES CD4490 • 1.5 WATT CAPABILITY WITH PROPER HEAT SINKING MAXIMUM RATINGS Operating Temperature: -65°C to +175°C


    OCR Scan     		PDF CD4460 CD4490 CD4460 CD4461 P30E5SM 23DZSS4 0DDD72Ã CD4490 CD4464 CD4469 CD4468 DIODE 33 25 CD4462 CD4463 CD4465

    ZENER DIODE 5.1V

    Abstract: zener DIODE A1 zener a1 7 10 watt zener diode diode ZENER A1 CD6485 CD6486 CD6487 CD6490 CD6491
    Text: • ZENER DIODE CHIPS CD6485 • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE thru • COMPATIBLE WITH ALL WIRE BONDING DIE ATTACH TECHNIQUES CD6491 • 1.5 WATT CAPABILITY WITH PROPER HEAT SINKING MAXIMUM RATINGS Operating Temperature: Storage Temperature:


    OCR Scan     		PDF CD6485 CD6491 200mA CD6485 CD6486 CD6487 2305SS4 000075b ZENER DIODE 5.1V zener DIODE A1 zener a1 7 10 watt zener diode diode ZENER A1 CD6490 CD6491

    N5711* diode Die

    Abstract: 1N5712 1N5711 DIE n5711 1N5711 CD2810 CD5711 CD5712 DSB5712
    Text: • 1N5711 AVAILABLE IN JANC • 1N5712 AVAILABLE IN JANC • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED CD5711 and CD5712 and CD2810 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES MAXIMUM RATINGS


    OCR Scan     		PDF 1N5711 1N5712 CD5711 CD5712 CD2810 CD2810 CD5711 CD5712 CD5711. N5711* diode Die 1N5711 DIE n5711 DSB5712