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    Central Semiconductor Corp CPD96V-CMLSH05-4-CT

    DIODE SCHOTTKY 40V 500MA DIE
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    CPD96V Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CPD96V Central Semiconductor Chip Form: SCHOTTKY DIODE 7 MIL Original PDF

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    Schottky diode

    Abstract: CMLSH05-4 diode 29 CPD96V
    Text: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD96V 500mA CMLSH05-4 29-August Schottky diode CMLSH05-4 diode 29 CPD96V

    Schottky diode Die

    Abstract: No abstract text available
    Text: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18.5 x 18.5 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 12 x 12 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD96V 500mA Schottky diode Die

    CPD96V

    Abstract: No abstract text available
    Text: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD96V 500mA CPD96V

    CMLSH05-4

    Abstract: CPD96V
    Text: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16.4 x 16.4 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å


    Original     		PDF CPD96V 500mA CMLSH05-4 22-March CMLSH05-4 CPD96V

    Schottky diode Die

    Abstract: No abstract text available
    Text: PROCESS Central CPD96V Schottky Diode Semiconductor Corp. 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization


    Original     		PDF CPD96V 500mA CMLSH05-4 15-March Schottky diode Die

    CP588V

    Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
    Text: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.


    Original     		PDF CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP588V CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF