MOSFETs
Abstract: Continuous drain AOD452 A1024* transistor soc fuses TRANSISTOR aoD452 thermal SIMULATION AOD452 Equivalent mosfet THEORY AND APPLICATIONS
Text: Power MOSFET Continuous Drain current rating and Bonding wire limitation Fei Wang , Kai Liu, Anup Bhalla Abstract Power MOSFET datasheets will usually show maximum values for continuous drain current Id, on the first page of datasheets. For bottom exposed part such as DPAK, TO220, D2PAK, there is always a note besides Id rating saying that Id is
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E024A
Abstract: E018A E240D E240B E960B E040A WIRES bonding E025A E1200A
Text: Excelics Semiconductor, Inc. Recommended Wire Bonding For Excelics FETs E018A E024A Drain Bonding Wire Grounded Source Bonding Wires Gate Bonding Wire E025A E030C Drain Bonding Wire Drain Bonding Wires Grounded Source Grounded Source Bonding Wires Bonding Wires
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E018A
E024A
E025A
E030C
E040A
E060A
E240D,
E480C,
E720A,
E960B
E024A
E018A
E240D
E240B
E040A
WIRES
bonding
E025A
E1200A
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tgf2023-2-20
Abstract: No abstract text available
Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE
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TGF2023-2-20
TQGaN25
TGF2023-2-20
DC-18
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Untitled
Abstract: No abstract text available
Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 53% Maximum PAE
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TGF2023-2-20
TQGaN25
TGF2023-2-20
DC-18
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HMMC-5034
Abstract: HMMC-5040 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Text: Agilent HMMC-5034 37–43 GHz Amplifier Data Sheet TC926 Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5034 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 37 GHz to 42.5 GHz range. At 40 GHz it
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HMMC-5034
TC926
HMMC-5034
HMMC-5040
5988-3203EN
GaAs MMIC ESD, Die Attach and Bonding Guidelines
agilent HMMC
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7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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5032
Abstract: Die Attach and Bonding Guidelines
Text: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power and 8 dB of small-signal gain from a small easy-to-use
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HMMC-5032
HMMC-5032
HMMC-5040
HMMC-5618
HMMC-5040
5032
Die Attach and Bonding Guidelines
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Untitled
Abstract: No abstract text available
Text: Avago HMMC-5032 17.7 – 32 GHz Amplifier Data Sheet Chip Size: 1.4 x 0.78 mm 55.1 x 30.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within
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HMMC-5032
HMMC-5032
HMMC-5040
HMMC-5618
5966-4572E
5988-2710EN
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15 watt power amplifier " 15 GHz"
Abstract: HMMC-5032 HMMC-5040 HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram Die Attach and Bonding Guidelines
Text: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power
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HMMC-5032
HMMC-5032
HMMC-5040
HMMC-5618
5966-4572E
5988-2710EN
15 watt power amplifier " 15 GHz"
HMMC-5040
HMMC-5618
GaAs MMIC ESD, Die Attach and Bonding Guidelines
long range gold detector circuit diagram
Die Attach and Bonding Guidelines
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Untitled
Abstract: No abstract text available
Text: 17.7– 32 GHz Amplifier Technical Data HMMC-5032 Features • 22 dBm Output P -1 dB • 8 dB Gain • 50 Ω Input/Output Matching • Small Size • Bias: 4.5 Volts, 250 mA Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate
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HMMC-5032
HMMC-5032
HMMC-5040
HMMC-5618
5966-4572E
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d2460
Abstract: HMMC-5033 HMMC-5040 HMMC-5618 agilent HMMC
Text: Agilent HMMC-5033 17.7–32 GHz Power Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. At 28 GHz
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HMMC-5033
HMMC-5033
HMMC-5040
HMMC-5618
5966-4573E
5988-2700EN
d2460
HMMC-5040
HMMC-5618
agilent HMMC
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HMMC-5033
Abstract: No abstract text available
Text: Avago HMMC-5033 17.7– 32 GHz Power Amplifier Data Sheet Chip Size: 2.74 x 1.31 mm 108 x 51.6 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate within
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HMMC-5033
HMMC-5033
HMMC5040
HMMC-5618
5966-4573E
5988-2700EN
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Untitled
Abstract: No abstract text available
Text: 17.7– 32 GHz Power Amplifier Technical Data HMMC-5033 Features • 26 dBm Output P -1 dB at 28 GHz • High Gain: 18 dB • 50 Ω Input/Output Matching • Small Size Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate
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HMMC-5033
HMMC-5033
HMMC-5040
HMMC-5618
10ons
5966-4573E
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Untitled
Abstract: No abstract text available
Text: 17.7– 32 GHz Power Amplifier Technical Data HMMC-5033 Features • 26 dBm Output P -1 dB at 28 GHz • High Gain: 18 dB • 50 Ω Input/Output Matching • Small Size Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate
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HMMC-5033
HMMC-5033
HMMC-5040
HMMC-5618
Thickne80
5966-4573E
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bonding
Abstract: VG-50
Text: Application Note for Dual-Gate FETs Bonding Diagram bonding wires are 1-mil diameter Au wires Drain Bonding Wire "Gate 2" Bonding Wires (2 plcs, 1 wire per pad) Source Bonding Wires (2 plcs, 2 wires per pad) Gate Bonding Wire Single Bias Configuration Dual Bias Configuration
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LP0701
Abstract: No abstract text available
Text: LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None 1 (mils) LP0701 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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LP0701
LP0701
A013009
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Untitled
Abstract: No abstract text available
Text: HMC-APH634 v00.0110 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This HMC-APH634 is ideal for: High Gain: 12 dB • Short Haul / High Capacity Links High P1dB: +19 dBm • Wireless LAN Bridges
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HMC-APH634
HMC-APH634
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HMC-APH634
Abstract: MMIC POWER AMPLIFIER hemt
Text: HMC-APH634 v00.0110 Linear & Power Amplifiers - Chip 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This HMC-APH634 is ideal for: High Gain: 12 dB • Short Haul / High Capacity Links High P1dB: +19 dBm • Wireless LAN Bridges
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HMC-APH634
HMC-APH634
MMIC POWER AMPLIFIER hemt
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Untitled
Abstract: No abstract text available
Text: HMC-APH634 v00.0110 Linear & Power amPLifiers - ChiP 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This hmC-aPh634 is ideal for: high Gain: 12 dB • short haul / high Capacity Links high P1dB: +19 dBm • wireless Lan Bridges
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HMC-APH634
HMC-APH634
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TP0606
Abstract: No abstract text available
Text: TP0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP0606 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si
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TP0606
TP0606
A020309
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DN3545
Abstract: No abstract text available
Text: DN3545 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) DN3545 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si
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DN3545
DN3545
A020309
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VN0606
Abstract: No abstract text available
Text: VN0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0606 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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VN0606
VN0606
A050409
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TN2501
Abstract: No abstract text available
Text: TN2501 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2501 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si
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TN2501
TN2501
A020309
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VN0109
Abstract: No abstract text available
Text: VN0109 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0109 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain
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VN0109
VN0109
A020309
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