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    BONDING OF DRAIN WIRE Search Results

    BONDING OF DRAIN WIRE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation

    BONDING OF DRAIN WIRE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFETs

    Abstract: Continuous drain AOD452 A1024* transistor soc fuses TRANSISTOR aoD452 thermal SIMULATION AOD452 Equivalent mosfet THEORY AND APPLICATIONS
    Text: Power MOSFET Continuous Drain current rating and Bonding wire limitation Fei Wang , Kai Liu, Anup Bhalla Abstract Power MOSFET datasheets will usually show maximum values for continuous drain current Id, on the first page of datasheets. For bottom exposed part such as DPAK, TO220, D2PAK, there is always a note besides Id rating saying that Id is


    Original     		PDF

    E024A

    Abstract: E018A E240D E240B E960B E040A WIRES bonding E025A E1200A
    Text: Excelics Semiconductor, Inc. Recommended Wire Bonding For Excelics FETs E018A E024A Drain Bonding Wire Grounded Source Bonding Wires Gate Bonding Wire E025A E030C Drain Bonding Wire Drain Bonding Wires Grounded Source Grounded Source Bonding Wires Bonding Wires


    Original     		PDF E018A E024A E025A E030C E040A E060A E240D, E480C, E720A, E960B E024A E018A E240D E240B E040A WIRES bonding E025A E1200A

    tgf2023-2-20

    Abstract: No abstract text available
    Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE


    Original     		PDF TGF2023-2-20 TQGaN25 TGF2023-2-20 DC-18

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 53% Maximum PAE


    Original     		PDF TGF2023-2-20 TQGaN25 TGF2023-2-20 DC-18

    HMMC-5034

    Abstract: HMMC-5040 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
    Text: Agilent HMMC-5034 37–43 GHz Amplifier Data Sheet TC926 Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5034 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 37 GHz to 42.5 GHz range. At 40 GHz it


    Original     		PDF HMMC-5034 TC926 HMMC-5034 HMMC-5040 5988-3203EN GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC

    7400A

    Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
    Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions


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    5032

    Abstract: Die Attach and Bonding Guidelines
    Text: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power and 8 dB of small-signal gain from a small easy-to-use


    Original     		PDF HMMC-5032 HMMC-5032 HMMC-5040 HMMC-5618 HMMC-5040 5032 Die Attach and Bonding Guidelines

    Untitled

    Abstract: No abstract text available
    Text: Avago HMMC-5032 17.7 – 32 GHz Amplifier Data Sheet Chip Size: 1.4 x 0.78 mm 55.1 x 30.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within


    Original     		PDF HMMC-5032 HMMC-5032 HMMC-5040 HMMC-5618 5966-4572E 5988-2710EN

    15 watt power amplifier " 15 GHz"

    Abstract: HMMC-5032 HMMC-5040 HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram Die Attach and Bonding Guidelines
    Text: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power


    Original     		PDF HMMC-5032 HMMC-5032 HMMC-5040 HMMC-5618 5966-4572E 5988-2710EN 15 watt power amplifier " 15 GHz" HMMC-5040 HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram Die Attach and Bonding Guidelines

    Untitled

    Abstract: No abstract text available
    Text: 17.7– 32 GHz Amplifier Technical Data HMMC-5032 Features • 22 dBm Output P -1 dB • 8 dB Gain • 50 Ω Input/Output Matching • Small Size • Bias: 4.5 Volts, 250 mA Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate


    Original     		PDF HMMC-5032 HMMC-5032 HMMC-5040 HMMC-5618 5966-4572E

    d2460

    Abstract: HMMC-5033 HMMC-5040 HMMC-5618 agilent HMMC
    Text: Agilent HMMC-5033 17.7–32 GHz Power Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. At 28 GHz


    Original     		PDF HMMC-5033 HMMC-5033 HMMC-5040 HMMC-5618 5966-4573E 5988-2700EN d2460 HMMC-5040 HMMC-5618 agilent HMMC

    HMMC-5033

    Abstract: No abstract text available
    Text: Avago HMMC-5033 17.7– 32 GHz Power Amplifier Data Sheet Chip Size: 2.74 x 1.31 mm 108 x 51.6 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate within


    Original     		PDF HMMC-5033 HMMC-5033 HMMC5040 HMMC-5618 5966-4573E 5988-2700EN

    Untitled

    Abstract: No abstract text available
    Text: 17.7– 32 GHz Power Amplifier Technical Data HMMC-5033 Features • 26 dBm Output P -1 dB at 28 GHz • High Gain: 18 dB • 50 Ω Input/Output Matching • Small Size Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate


    Original     		PDF HMMC-5033 HMMC-5033 HMMC-5040 HMMC-5618 10ons 5966-4573E

    Untitled

    Abstract: No abstract text available
    Text: 17.7– 32 GHz Power Amplifier Technical Data HMMC-5033 Features • 26 dBm Output P -1 dB at 28 GHz • High Gain: 18 dB • 50 Ω Input/Output Matching • Small Size Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate


    Original     		PDF HMMC-5033 HMMC-5033 HMMC-5040 HMMC-5618 Thickne80 5966-4573E

    bonding

    Abstract: VG-50
    Text: Application Note for Dual-Gate FETs Bonding Diagram bonding wires are 1-mil diameter Au wires Drain Bonding Wire "Gate 2" Bonding Wires (2 plcs, 1 wire per pad) Source Bonding Wires (2 plcs, 2 wires per pad) Gate Bonding Wire Single Bias Configuration Dual Bias Configuration


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    LP0701

    Abstract: No abstract text available
    Text: LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None 1 (mils) LP0701 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original     		PDF LP0701 LP0701 A013009

    Untitled

    Abstract: No abstract text available
    Text: HMC-APH634 v00.0110 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This HMC-APH634 is ideal for: High Gain: 12 dB • Short Haul / High Capacity Links High P1dB: +19 dBm • Wireless LAN Bridges


    Original     		PDF HMC-APH634 HMC-APH634

    HMC-APH634

    Abstract: MMIC POWER AMPLIFIER hemt
    Text: HMC-APH634 v00.0110 Linear & Power Amplifiers - Chip 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This HMC-APH634 is ideal for: High Gain: 12 dB • Short Haul / High Capacity Links High P1dB: +19 dBm • Wireless LAN Bridges


    Original     		PDF HMC-APH634 HMC-APH634 MMIC POWER AMPLIFIER hemt

    Untitled

    Abstract: No abstract text available
    Text: HMC-APH634 v00.0110 Linear & Power amPLifiers - ChiP 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This hmC-aPh634 is ideal for: high Gain: 12 dB • short haul / high Capacity Links high P1dB: +19 dBm • wireless Lan Bridges


    Original     		PDF HMC-APH634 HMC-APH634

    TP0606

    Abstract: No abstract text available
    Text: TP0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP0606 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original     		PDF TP0606 TP0606 A020309

    DN3545

    Abstract: No abstract text available
    Text: DN3545 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) DN3545 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original     		PDF DN3545 DN3545 A020309

    VN0606

    Abstract: No abstract text available
    Text: VN0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0606 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original     		PDF VN0606 VN0606 A050409

    TN2501

    Abstract: No abstract text available
    Text: TN2501 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2501 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original     		PDF TN2501 TN2501 A020309

    VN0109

    Abstract: No abstract text available
    Text: VN0109 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0109 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original     		PDF VN0109 VN0109 A020309